Patents Assigned to H. C. Starck, Inc.
  • Patent number: 8449818
    Abstract: The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.
    Type: Grant
    Filed: June 30, 2010
    Date of Patent: May 28, 2013
    Assignee: H. C. Starck, Inc.
    Inventors: Gary Alan Rozak, Mark E. Gaydos, Patrick Alan Hogan, Shuwei Sun
  • Publication number: 20120291592
    Abstract: In various embodiments, low-oxygen metal powder is produced by heating a metal powder to a temperature at which an oxide of the metal powder becomes thermodynamically unstable and applying a pressure to volatilize the oxygen.
    Type: Application
    Filed: June 21, 2012
    Publication date: November 22, 2012
    Applicant: H. C. Starck Inc.
    Inventors: Leonid N. Shekhter, Steven a. Miller, Leah F. Haywiser, Rong-Chein R. Wu
  • Publication number: 20110097236
    Abstract: Molybdenum titanium sputter targets are provided. In one aspect, the targets are substantially free of the ?(Ti, Mo) alloy phase. In another aspect, the targets are substantially comprised of single phase ?(Ti, Mo) alloy. In both aspects, particulate emission during sputtering is reduced. Methods of preparing the targets, methods of bonding targets together to produce large area sputter targets, and films produced by the targets, are also provided.
    Type: Application
    Filed: November 2, 2010
    Publication date: April 28, 2011
    Applicant: H. C. Starck Inc.
    Inventors: Mark E. Gaydos, Prabhat Kumar, Steve Miller, Norman C. Mills, Gary Rozak, Rong-Chein Richard Wu
  • Publication number: 20080193798
    Abstract: Molybdenum sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m×5.5 m. The thin films can be used in electronic components such as Thin Film Transistor—Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emitting Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.
    Type: Application
    Filed: August 29, 2005
    Publication date: August 14, 2008
    Applicant: H. C. STARCK INC.
    Inventors: Brad Lemon, Joseph Hirt, Timothy Welling, James G. Daily, David Meendering, Gary Rozak, Jerome O'Grady, Peter R. Jepson, Prabhat Kumar, Steven A. Miller, Richard Wu, Davd G. Schwarz
  • Patent number: 7056470
    Abstract: A capacitor-grade wire made from powder metallurgy containing at least niobium and silicon, wherein the niobium is the highest weight percent metal present in the niobium wire. The wire having a controlled tensile strength at finish diameter exceeds the strength of capacitor-grade wire formed by ingot metallurgy. Also, the powder metallurgy wire hardness exceeds capacitor-grade wire formed from ingot metallurgy with electrical leakage meeting the specifications normally applied to capacitor grade tantalum, niobium or niobium-zirconium lead wire at sinter temperatures of about 1150° C. and above.
    Type: Grant
    Filed: January 21, 2003
    Date of Patent: June 6, 2006
    Assignee: H. C. Starck Inc.
    Inventors: Richard Malen, Prabhat Kumar
  • Patent number: 6927967
    Abstract: Electrolytic capacitor powder substrates are provided of refractory metal nitrides to reduce instability at a substrate-oxide (as formed) interface whereby the resultant capacitor sensitivity to hear, bias and frequency is reduced.
    Type: Grant
    Filed: December 17, 2002
    Date of Patent: August 9, 2005
    Assignee: H. C. Starck Inc.
    Inventor: Terrance B. Tripp
  • Patent number: 6912113
    Abstract: The invention relates to a thin film capacitor containing (a) a substrate, (b) a first polymeric film comprising an electrically conductive polymer located on the substrate, (c) a pentoxide layer selected from the group consisting of tantalum pentoxide, or niobium pentoxide, and mixtures thereof, (d) a second polymeric film comprising an electrically conductive polymer located on the pentoxide layer.
    Type: Grant
    Filed: March 16, 2004
    Date of Patent: June 28, 2005
    Assignee: H. C. Starck, Inc.
    Inventors: Prabhat Kumar, Henning Uhlenhut
  • Patent number: 6849104
    Abstract: High purity refractory metals, valve metals, refractory metal oxides, valve metal oxides, or alloys thereof suitable for a variety of electrical, optical and mill product/fabricated parts usages are produced from their respective oxides by metalothermic reduction of a solid or liquid form of such oxide using a reducing agent that establishes (after ignition) a highly exothermic reaction, the reaction preferably taking place in a continuously or step-wise moving oxide such as gravity fall with metal retrievable at the bottom and an oxide of the reducing agent being removable as a gas or in other convenient form and unreacted reducing agent derivatives being removable by leaching or like process.
    Type: Grant
    Filed: May 4, 2001
    Date of Patent: February 1, 2005
    Assignee: H. C. Starck Inc.
    Inventors: Leonid N. Shekhter, Terrance B. Tripp, Leonid L. Lanin, Anastasia M. Conlon, Howard V. Goldberg
  • Patent number: 6818191
    Abstract: The process chemistry during the oxidation of molybdenite concentrates in an oxygen pressure leach can be controlled by regulating the amount of ferric iron and excess sulfuric acid recycled as autoclave discharge slurry or filtrate to the autoclave feed. A computer model capable of predicting the concentration of soluble molybdenum in the autoclave discharge and based on the concentrate and recycle analyses was developed.
    Type: Grant
    Filed: May 9, 2001
    Date of Patent: November 16, 2004
    Assignee: H. C. Starck, Inc.
    Inventors: John E. Litz, Paul B. Queneau, Rong-Chien Wu
  • Patent number: 6731495
    Abstract: The invention relates to a thin film capacitor containing (a) a substrate, (b) a first polymeric film containing an electrically conductive polymer located on the substrate, (c) a pentoxide layer selected from the group consisting of tantalum pentoxide, or niobium pentoxide, and mixtures thereof, (d) a second polymeric film containing an electrically conductive polymer located on the pentoxide layer.
    Type: Grant
    Filed: November 1, 2002
    Date of Patent: May 4, 2004
    Assignee: H. C. Starck, Inc.
    Inventors: Prabhat Kumar, Henning Uhlenhut
  • Patent number: 6730279
    Abstract: High purity ammonium dimolybdate or molybdenum oxide is produced by the pressure oxidation of low grade molybdenite concentrates or molybdenum intermediates. The process entails nearly complete oxidation of the sulfide minerals while optimizing the process chemistry and autoclave conditions to solubilize as little of the molybdenum values as possible. The autoclave discharge 12 is then subjected to a leaching step, either an alkaline leach 50, 400 or ammonium leach 250 process, before or after a liquid/solid separation step 20, 220, 410. The solution is then subjected to (a) filtration 60, 410, solvent extraction 70, 440, crystallization 90,450, and calcination 120, 480 or (b) filtration 260, 280, crystallization 290, and calcination 320 to produce a product suitable for chemical-grade molybdenum oxide 125, 325, 485.
    Type: Grant
    Filed: May 9, 2001
    Date of Patent: May 4, 2004
    Assignee: H. C. Starck, Inc.
    Inventors: Robert W. Balliett, Wolfgang Kummer, John E. Litz, Lawrence F. McHugh, Harry H. K. Nauta, Paul B. Queneau, Rong-Chien Wu
  • Patent number: 6716389
    Abstract: A process for producing sintered pellets made from blends of refractory metal and refractory metal nitride powders were found to have a higher fraction of intra-agglomerate pores than those made from the refractory metal or refractory metal nitride alone resulting in improved capacitor grade powders, anodes and finished capacitors therefrom. The pellet porosity and total intrusion volume maximizes when the mixture is in the 50-75 W/W % refractory metal nitride range. The total pellet pore surface area was found to be relatively independent of refractory metal nitride concentration above 50%. A substrate consisting of a 50/50 or 25/75 W/W % refractory metal/refractory metal nitride powder mixture should produce solid capacitors with higher capacitance recovery and lower ESR.
    Type: Grant
    Filed: October 25, 2002
    Date of Patent: April 6, 2004
    Assignee: H. C. Starck Inc
    Inventors: Terrance B. Tripp, Barbara L. Cox
  • Patent number: 6593532
    Abstract: Electrolytic capacitor lead wires doped with one or more interstitial elements at the surface to enhance (lower) leakage of capacitors using such lead wires.
    Type: Grant
    Filed: October 11, 2000
    Date of Patent: July 15, 2003
    Assignee: H. C. Starck, Inc.
    Inventors: Howard V. Goldberg, Prabhat Kumar, Thomas Ryan
  • Patent number: 6358625
    Abstract: Refractory metal articles having hither than normal impurity levels of concentrations of additive species near the surface that promote chemically enhanced sintering without any adverse effect on function properties, including, among others, tantalum or niobium lead wires that form assemblies useful as electrolytic capacitor anodes and the like, as made by surface oxidation of the wire, embedding a wire end in a loose mass of the powder and sintering to producing assemblies of enhanced structural integrity and affording stable electrical characteristics of electrical devices including such assemblies.
    Type: Grant
    Filed: May 9, 2000
    Date of Patent: March 19, 2002
    Assignee: H. C. Starck, Inc.
    Inventors: Prabhat Kumar, Howard V. Goldberg, Thomas Ryan
  • Patent number: 6171363
    Abstract: Metal powder from the group Ta, Nb, Ti, Mo, W, V, Zr, Hf preferrably Ta or Nb, is made in a fine powder form by reduction of metal oxide by contact with a gaseous reducing agent, preferrably an alkaline earth metal, to near complete reduction, leaching, further deoxidation and agglomeration, the powder so produced being sinterable to capacitor anode form and processable to other usages.
    Type: Grant
    Filed: May 6, 1998
    Date of Patent: January 9, 2001
    Assignee: H. C. Starck, Inc.
    Inventors: Leonid N. Shekhter, Terrance B. Tripp, Leonid L. Lanin
  • Patent number: 5940675
    Abstract: Powder metallurgy production of T222 alloy affording properties comparable to melt derived T222, but at higher yields and lower costs, is enabled by blending component powders of minus 325 mesh and sintering at 2,400.degree. C. in three sinter steps and utilizing a slow ramp up in the first sinter step and cold isostatic pressing prior to the first sinter step and isostatic press densification in conjunction with at least the first sinter step.
    Type: Grant
    Filed: December 24, 1997
    Date of Patent: August 17, 1999
    Assignee: H. C. Starck, Inc.
    Inventors: Robert W. Balliett, Trung Luong
  • Patent number: 5882719
    Abstract: A combination of static voltage and sweep voltage tests performed on capacitor grade powders gives a valid prediction of performance of eventual solid electrolyte capacitors incorporating such powders.
    Type: Grant
    Filed: December 13, 1996
    Date of Patent: March 16, 1999
    Assignee: H. C. Starck, Inc.
    Inventor: Richard M. Creasi, Jr.
  • Patent number: 5676005
    Abstract: A process for drawing wire employing a lubricant comprising perfluorocarbon compounds (PFCs), including aliphatic perfluorocarbon compounds (.alpha.-PFCs) having the general formula C.sub.n F.sub.2n+2, perfluoromorpholines having the general formula C.sub.n F.sub.2n+1 ON, perfluoroamines (PFAs) and highly fluorinated amines (HFAs), and perfluoroethers (PFEs). Such fully and highly fluorinated carbon compounds exhibit a very high degree of thermal and chemical stability due to the strength of the carbon-fluorine bond. Further, because the compounds are fully fluorinated, and therefore do not contain chlorine and bromine, they have zero ozone depletion potential (ODP). Further, because the compounds are photochemically non-reactive in the atmosphere, they are not precursors to photochemical smog and are exempt from the United States Environmental Protection Agency (EPA) volatile organic compound (VOC) definition.
    Type: Grant
    Filed: March 27, 1996
    Date of Patent: October 14, 1997
    Assignee: H. C. Starck, Inc.
    Inventor: Robert W. Balliett
  • Patent number: 5470525
    Abstract: Tantalum anode pellets or tantalum powders are treated to remove carbon content (mostly attributable to binders used in pressing the powders to pellet form and/or sintering of the pellets) by an aqueous leach at 50.degree.-200.degree. F. in lieu of the conventional complex distillation/decomposition methods.
    Type: Grant
    Filed: July 1, 1994
    Date of Patent: November 28, 1995
    Assignee: H. C. Starck, Inc.
    Inventors: Terrance B. Tripp, Malcolm Shaw
  • Patent number: H2087
    Abstract: Refractory metal pickling bath of HF/H2O2 aqueous solution with recovery of the etched metal as a salt thereof and separation of dissolved impurities taken from the refractory metal, with avoidance of drawbacks of state of the art HF/HNO3 pickling solutions.
    Type: Grant
    Filed: May 19, 1998
    Date of Patent: November 4, 2003
    Assignee: H. C. Starck, Inc.
    Inventors: Robert W. Balliett, Arthur H. Bronstein, Thomas J. Ryan, Michael Greengart, Daniel J. Moynihan, Douglas A. Ryan, Paul Queneau, Mark Berggren, Brandon Hagen