Abstract: A method of monitoring the chalcogenation process in which the chalcogenide semiconductor layer is produced by initially sequentially depositing the two precursor layers of elements A and B and thereafter carrying out a chalcogenizing process with a simultaneous optical process control in which the layer sequence A B is irradiated by light from at least one coherent light source, the light diffusely scattered at the surface is detected and the scattered light signal measured as a function of time is evaluated such that characteristic changes in the layer developing during the chalcogenation are assigned to four characteristic points of the scattered light signal curve.

Abstract: A single-side contacted solar cell and method for production of a single-side contacted solar cell provide a direct arrangement of a contact grid on one side of an absorber layer. A free surface of the contact grid is coated with an electrically non-conducting insulation layer. An emitter layer is deposited on a whole surface such that the contact grid is arranged between the absorber layer and the emitter layer. The emitter layer is provided with a contact layer. For back face contact, the emitter layer is arranged on a back face of the absorber layer to avoid additional absorptive losses.

Abstract: A method for a powder-metallurgical production of metal foamed material and of parts made of metal foamed material includes mixing a pulverulent metallic material including at least one of a metal and a metal alloy; pressing, under mechanical pressure, the mixed pulverulent metallic material so as to form a dimensionally stable semi-finished product; placing the semi-finished product into a chamber that is configured to be sealed pressure-tight; sealing the chamber; heating the semi-finished product to a melting or solidus temperature of the pulverulent metallic material; once the melting, or solidus temperature has been reached, reducing tile pressure in the chamber from an initial pressure to a final pressure so that the semi-finished product foams so as to form a metal foam; and lowering the temperature of the metal foam so as to solidify the metal foam.

Abstract: A method for preparing a platinum-free chelate catalyst material as an intermediate product for selective electrocatalytic reduction of oxygen includes performing a low-temperature plasma treatment on a powdery form of the transition-metal chelate in a plasma reactor chamber having an inert plasma gas disposed therein. A plasma power, a plasma gas pressure, a plasma initialization and a treatment time of the low-temperature plasma treatment are selected so that molecules of the transition metal chelate are fragmented in the plasma and cross-link in a subsequent chemical reaction so as to form a carbon matrix and retain a basic chelate structure in a surrounding of the transition metal.

Abstract: A heterocontact solar cell in a layer structure. The solar cell includes an absorber made of a p-type and/or n-type doped crystalline semiconductor material. The cell also includes an emitter made of an amorphous semiconductor material that is oppositely doped relative to the absorber. Also included is an intrinsic interlayer made of an amorphous semiconductor material between the absorber and the emitter. The cell includes a cover layer on the side of the absorber facing a light. A first ohmic contact structure including a minimized shading surface on the side of the absorber facing the light and a second ohmic contact structure on a side of the absorber facing away from the light are also included.

Abstract: A high measuring resolution along with a large irradiation surface and a high beam intensity are required for structural analysis of material according to the small angle neutron scattering measuring technique. However, with known diaphragm collimators, the necessary beam divergence cannot be reached without an unacceptable loss of intensity. The inventive neutron optical component (1) comprises a plurality of successively arranged pinhole diaphragms embodied as grating diaphragms (7), each grating diaphragm (7) comprising a plurality of diaphragm apertures (14). In this way, the neutron beam is divided into individual beams which are each improved in terms of the convergence thereof. Furthermore, the channels defined by the course of the grating diaphragms (7) by means of respectively identically positioned diaphragm apertures (14) are narrowed according to the convergence cone provided by the structure of the measuring instrument.

Abstract: A method of fabricating a nano-scaled semiconductor by depositing upon a substrate, within the confines of a narrowly limited electric field, from an adjustable mixture of precursor gases containing different precursor compounds, nano-scaled deposits of common chemical compounds released in consequence of the precursor compounds breaking down upon the simultaneous or sequential application of a voltage exceeding a predetermined threshold value.

Abstract: A neutron-optical component array in which the beam paths of the individual moderators are combined in a concerted manner so as to create a superimposed neutron beam with an effective mean beam direction. The superimposed neutron beam has a multi spectrum composed of the single spectrums of several moderators, whereby a larger spectral width is obtained, making various applications in different neutron energy fields possible. The multi spectrum can be further improved in terms of the intensity thereof and the beam quality by adding further neutron-optical components, particularly in the form of an energy-depending switching super reflector, and by switching between moderators.

Abstract: Known methods of producing large-surface integrated thin-film solar modules with an amorphous, poly- or microcrystalline absorber layer always comprise division and conversion structuring processes which can cause instabilities in the structuring and which are relatively expensive. According to the inventive method which can be used to fabricate substrate solar cells and superstrate solar cells, the mask which is used provides for structuring itself during the deposition of layers for the rear electrode and the absorber layer through its geometrical form. The use of a mask which can be reused as an independent element after use in this method allows for a relatively free range of possible geometric forms. This also makes possible applications inside and outside of buildings, including in the area of a window, from an esthetic and informal point of view.

Abstract: The invention relates to an effective and environmentally safe process for the microbial leaching of sulfidic materials, particularly of sulfide ores such as pyrite, marcasite, chalcopyrite, bornite, or covelline, which process is characterized in that the aqueous leaching fluid is added with sulfur-containing amino acids or derivatives thereof. The invention is also directed to the use of sulfur-containing amino acids or derivatives thereof in the microbial leaching of sulfidic materials, particularly in pyrite leaching.

Abstract: In known MOS dosimeters for measuring an energy dosage within radiation fields, which comprise a semiconductor substrate with an insulator layer and a metal contact or poly-si-contact, a measurement is taken and irreversible damage is done to the insulator layer. Prior art dosimeters of this kind cannot be electrically reset, nor can such MOS structures be directly integrated with evaluating electronics. The present invention avoids these drawbacks by providing a hard-radiation resistant insulator layer with a floating gate X. Such a resistant insulator layer is produced in a "hardened" process by thermal dry oxidation of silicon at low temperatures of about 850.degree. to 950.degree. C. The inventive dosimeter makes it possible to integrate, on the floating gate, both negative and positive charges. This permits an integration of MOS sensors and signal processing electronic elements on a single chip.

Abstract: Solar cells with photoanodes based on CuInS.sub.2 semiconductor material produced by specially adapted methods, permit the transformation of light into electric energy with a good efficiency. The semiconductor material according to the invention comprises inclusions of extraneous phases, namely In.sub.2 S.sub.3, In and/or Cu.sub.2-x S (0.ltoreq.x.ltoreq.1) in a concentration between 5 per thousand and 5 percent, in the CuInS.sub.2. The energy gap of this material is 1.5 eV. Working electrodes for photoelectrochemical solar cells or solid state solar cells can be constructed.