Abstract: A SERS unit 1A comprises a SERS element 2 having a substrate 21 and an optical function part 20 formed on the substrate 21, the optical function part 20 for generating surface-enhanced Raman scattering; a transportation board 3 supporting the SERS element 2 during transportation, the SERS element 2 being removed from the transportation board 3 upon measurement; and a holding part 4 having a pinching part 41 pinching the SERS element 2 in cooperation with the transportation board 3, and detachably holding the SERS element 2 in the transportation board 3.

Abstract: A spectroscopic module 1 is provided with a spectroscopic unit 8 and a photodetector 9 in addition to a spectroscopic unit 7 and a photodetector 4 and thus can enhance its detection sensitivity for light in a wide wavelength range or different wavelength regions of light. A light-transmitting hole 4b is disposed between light detecting portions 4a, 9a, while a reflection unit 6 is provided so as to oppose a region R in a light-absorbing substrate 2, whereby the size can be kept from becoming larger. Ambient light La is absorbed by the region R in the substrate 2. Any part of the light La transmitted through the region R in the substrate 2 is reflected to the region R by the unit 6 formed so as to oppose the region R, whereby stray light can be inhibited from being caused by the incidence of the light La.

Abstract: A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer, disposed on the substrate, for generating ultraviolet light in response to an electron beam. The light-emitting layer includes a powdery or granular oxide crystal containing Lu and Si doped with an activator (e.g., Pr:LPS and Pr:LSO crystals).

Abstract: A light irradiation device includes a Gaussian beam output unit for outputting light having a light intensity distribution that conforms to a Gaussian distribution, a spatial light modulator for receiving the light and modulating the light by presenting a CGH, an optical system for converging the modulated light, and an amplitude mask arranged on at least one of an optical axis between the Gaussian beam output unit and the spatial light modulator and an optical axis between the spatial light modulator and the optical system. The amplitude mask has a circular-shaped first region centered on the optical axis and an annular-shaped second region that surrounds the first region. Transmittance in the second region continuously decreases as a distance from the optical axis increases.

Abstract: An optical observation system includes a spatial light modulator displaying a Fresnel type kinoform on a phase modulation plane, and modulating light L1 in phase to irradiate an observation object with modulated light L2, an imaging optical system imaging observation target light L3 from the observation object, an optical system moving mechanism moving the imaging optical system in an optical axis direction of the observation target light L3, and a control section controlling the optical system moving mechanism such that the focal position of the imaging optical system changes in response to a change in the light condensing position of the modulated light L2 by the Fresnel type kinoform.

Abstract: A solid-state imaging device includes a photodetecting section, a vertical shift register section, first row selection lines, and second row selection lines. The vertical shift register section provides the row selection lines of the m-th row with common row selection signals.

Abstract: A surface-enhanced Raman scattering element comprises a substrate having a principal surface; a molded layer including a support part formed on the principal surface and a fine structure part formed on the support part; and a conductor layer, deposited on the fine structure part, constituting an optical functional part for generating surface-enhanced Raman scattering. The fine structure part has a plurality of pillars erected on the support part. The support part is provided with a plurality of opposing parts opposing side faces of the pillars. The opposing parts are located on the substrate side relative to leading end parts of the pillars in a projecting direction of the pillars.

Abstract: A film thickness measurement device 1A includes a light emission unit 10 for emitting light onto a measurement object 100, a light detection unit 20A for detecting the wavelength-dependent intensity of reflected light, and a film thickness calculation unit 30A for determining the film thickness of a first film 102 by comparing measured spectral reflectance obtained based on the detection result in the light detection unit 20A with theoretical spectral reflectance that takes into account front surface reflectance, front surface transmissivity, and back surface reflectance. The film thickness calculation unit 30A compares the measured spectral reflectance with a plurality of values of the theoretical spectral reflectance obtained by changing the front surface reflectance value, the front surface transmissivity value, and the back surface reflectance value, and determines the film thickness of the first film 102 based on the theoretical spectral reflectance closest to the measured spectral reflectance.

Abstract: A spectroscopic sensor comprises an interference filter unit, a light detection substrate, and a separator. The interference filter unit has a cavity layer and first and second mirror layers opposing each other through the cavity layer and selectively transmits therethrough a predetermined wavelength range of light according to its incident position from the first mirror layer side to the second mirror layer side. The light detection substrate has a light-receiving surface for receiving light transmitted through the interference filter unit and detects the light incident on the light-receiving surface. The separator extends from the cavity layer to at least one of the first and second mirror layers and optically separates the interference filter unit as seen in a predetermined direction intersecting the light-receiving surface.

Abstract: An interference observation apparatus includes a light source, a splitting beam splitter, a combining beam splitter, a beam splitter, a mirror, a beam splitter, a mirror, a piezo element, a stage, an imaging unit, an image acquisition unit, and a control unit. An interference optical system from the splitting beam splitter to the combining beam splitter forms a Mach-Zehnder interferometer. The mirror freely moves in a direction perpendicular to a reflecting surface of the mirror. The total number of times of respective reflections of first split light and second split light in the interference optical system is an even number.

Abstract: A sample support according to an aspect is a sample support for a surface-assisted laser desorption/ionization method, and includes: a substrate in which a plurality of through-holes passing from one surface thereof to the other surface thereof are provided; and a conductive layer that is formed of a conductive material and covers at least the one surface. The through-holes have a width of 1 to 700 nm, and the substrate has a thickness of 1 to 50 ?m.

Abstract: Provided is a swept light source including one end surface coupled to a wavelength filter constituted of a diffraction grating and an end mirror via a light deflector and another end surface including a gain medium facing an output coupling mirror and which configures a laser cavity between the end mirror and the output coupling mirror, wherein a drive voltage having an AC voltage on which a DC bias voltage is superimposed is output from a control voltage source of the light deflector to an electrode pair of an electro-optic crystal, light is radiated from a light emitter to the electro-optic crystal, and incident light from the gain medium incident along an optical axis perpendicular to a direction of an electric field formed by the control voltage is deflected in a direction parallel to the electric field, so that wavelength sweeping is performed.

Abstract: A mammography device is disclosed. The mammography device includes a container configured to surround the breast and a plurality of optical fibers attached to be directed inward in the container and configured to perform radiation and detection of light. The container has a base member having an opening, a plurality of annular members continuously disposed to come in communication with the opening, and a bottom member disposed inside the annular member spaced the farthest distance from the base member. The annular members and the bottom member are configured to relatively displace the adjacent annular member on the side of the base member or the base member in a communication direction. Some of the plurality of optical fibers is attached to the plurality of annular members.

Abstract: A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

Abstract: A problem to be solved is to provide a method for processing zirconia without producing a monoclinic crystal. The solution is a method for processing zirconia, including the step of irradiating the zirconia with a laser with a pulse duration of 10?12 seconds to 10?15 seconds at an intensity of 1013 to 1015 W/cm2.

Abstract: A total reflection spectroscopic measurement device includes a terahertz wave generation unit, an internal total reflection prism, a detection unit configured to detect the terahertz wave, an electric field vector measurement unit configured to measure an electric field vector of the terahertz wave, and an analysis unit configured to acquire information about an optical constant of the object to be measured. Proportions of S polarization component and P polarization component of the terahertz wave are constant. The analysis unit acquires the information about the optical constant on the basis of a ratio between S polarization component and P polarization component of the measured electric field vector when the object is not arranged on the total reflection surface and a ratio between S polarization component and P polarization component of the measured electric field vector when the object is arranged on the total reflection surface.

Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM optically coupled to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, a diffraction grating layer 6 optically coupled to the active layer 4, and a drive electrode E3 that is disposed between the cladding layer 2 and the spatial light modulator SLM and supplies an electric current to the active layer 4, and the drive electrode E3 is positioned within an XY plane and has a plurality of openings as viewed from a Z-axis direction and has a non-periodic structure.

Abstract: A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.

Abstract: A radiation image detecting device includes a photodetecting element that detects fluorescence light, and a prism that is disposed on an optical path of excitation light traveling toward an imaging plate and between the photodetecting element and the imaging plate. The prism includes, as surface thereof, a side face that is opposed to the imaging plate, and a side face and a side face that are inclined relative to the side face. The prism is disposed so that the excitation light incident through the side face propagates inside and is output from the side face and so that reflection from the imaging plate incident through the side face propagates inside and is output from the side face. The photodetecting element is disposed so as to be opposed to a region different from a region where the reflection from the imaging plate is output, in the surface of the prism.