Patents Assigned to Hamamatsu Terebi Kabushiki Kaisha
  • Trigger circuit
    Patent number: 4492879
    Abstract: A trigger circuit comprises a shaping circuit connected between an input terminal receiving a trigger signal and an avalanche transistor. The shaping circuit has a pass band whose upper limit frequency is much lower than the frequency component of the leading edge of the input trigger signal, and it has a saturation characteristic to provide a pulse whose time width is sufficient to start the avalanche transistor.
    Type: Grant
    Filed: October 16, 1981
    Date of Patent: January 8, 1985
    Assignee: Hamamatsu Terebi Kabushiki Kaisha
    Inventors: Yutaka Tsuchiya, Eiji Inuzuka, Yuji Shinoda
  • Streak image analyzing device
    Patent number: 4232333
    Abstract: In a streak image analyzing device, a belt-shaped region perpendicular to the scanning lines on the scanning rastor of a television camera is set, the video signals only for the belt-shaped region are integrated every scanning line, the integration signals are stored in a memory having memory position, or addresses, provided respectively for the scanning lines, and the signal thus stored are read out to be displayed.
    Type: Grant
    Filed: January 5, 1979
    Date of Patent: November 4, 1980
    Assignee: Hamamatsu Terebi Kabushiki Kaisha
    Inventors: Teruo Hiruma, Yutaka Tsuchiya
  • Semiconductor photoelectron emission device
    Patent number: 4075654
    Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.
    Type: Grant
    Filed: October 26, 1976
    Date of Patent: February 21, 1978
    Assignee: Hamamatsu Terebi Kabushiki Kaisha
    Inventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
  • Semiconductor photoelectron emission device
    Patent number: 4063269
    Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.
    Type: Grant
    Filed: October 26, 1976
    Date of Patent: December 13, 1977
    Assignee: Hamamatsu Terebi Kabushiki Kaisha
    Inventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
  • Semiconductor photoelectron emission device
    Patent number: 4063276
    Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.
    Type: Grant
    Filed: October 26, 1976
    Date of Patent: December 13, 1977
    Assignee: Hamamatsu Terebi Kabushiki Kaisha
    Inventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
  • Semiconductor cold electron emission device
    Patent number: 4040079
    Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.
    Type: Grant
    Filed: September 20, 1976
    Date of Patent: August 2, 1977
    Assignee: Hamamatsu Terebi Kabushiki Kaisha
    Inventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
  • Semiconductor cold electron emission device
    Patent number: 4040074
    Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.
    Type: Grant
    Filed: September 20, 1976
    Date of Patent: August 2, 1977
    Assignee: Hamamatsu Terebi Kabushiki Kaisha
    Inventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
  • Semiconductor cold electron emission device
    Patent number: 4040080
    Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.
    Type: Grant
    Filed: September 20, 1976
    Date of Patent: August 2, 1977
    Assignee: Hamamatsu Terebi Kabushiki Kaisha
    Inventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
  • Semiconductor photoelectron emission device
    Patent number: 4015284
    Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.
    Type: Grant
    Filed: January 9, 1976
    Date of Patent: March 29, 1977
    Assignee: Hamamatsu Terebi Kabushiki Kaisha
    Inventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
  • Semiconductor cold electron emission device
    Patent number: 4012760
    Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.
    Type: Grant
    Filed: March 22, 1976
    Date of Patent: March 15, 1977
    Assignee: Hamamatsu Terebi Kabushiki Kaisha
    Inventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
  • Photocathode made of a semiconductor single crystal
    Patent number: 3988497
    Abstract: The photoelectric surface of a photocathode made of a semiconductor single crystal is made minutely rough and, accordingly, lusterless, so that the transmissivity of a polarized light beam incident on the photoelectric surface is almost unaffected by the direction of electric field vector of the beam.
    Type: Grant
    Filed: October 21, 1974
    Date of Patent: October 26, 1976
    Assignee: Hamamatsu Terebi Kabushiki Kaisha
    Inventor: Norio Asakura
  • Semiconductor cold electron emission device
    Patent number: 3972060
    Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden band width is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.
    Type: Grant
    Filed: March 18, 1974
    Date of Patent: July 27, 1976
    Assignee: Hamamatsu Terebi Kabushiki Kaisha
    Inventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
  • Semiconductor photoelectron emission device
    Patent number: 3953880
    Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.
    Type: Grant
    Filed: March 27, 1974
    Date of Patent: April 27, 1976
    Assignee: Hamamatsu Terebi Kabushiki Kaisha
    Inventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa