Abstract: A semiconductor laser suitable for incorporation into integrated circuits by providing the laser device with a short resonator dimensioned so as to restrict the power consumption of the device to about 1 mW or less. This is made possible by improving the optical confinement, carrier confinement and the reflectivity of end faces in the lasing cavity with a short length and a narrow stripe width of the cavity. Double-layered mirrors are formed at the two opposed ends of the resonator by depositing a film of dielectric insulating material directly on each end and covering the film with a layer of metal.