Abstract: A semiconductor device comprises a semiconductive substrate of a low impurity concentration, a channel area of a low impurity concentration formed on the substrate, a source area formed on the channel area and having a high impurity concentration of a conductive type opposite to that of the substrate, a drain area formed on the channel area and having a high impurity concentration of a conductive type opposite to that of the substrate, and an accumulating gate area formed on the channel area and having a conductive type same as that of the substrate. The source area and drain area are arranged in a predetermined direction along the substrate. The accumulating gate area comprises a first part sandwiched between the source area and the drain area and extended in a direction crossing the predetermined direction and second and third parts connected with the first part and approximately extended in the predetermined direction.

Abstract: An insulated-gate type transistor having a semiconductor body of a low impurity concentration, a heavily-doped source region of a conductivity type opposite to that of the semiconductor body for supplying charge carriers, a heavily-doped region for receiving the carriers supplied form the source region, both of which regions may be provided separately in a main surface of the body, a channel region located between the source and drain regions for the travel of these carriers, an insulated-gate structure inputted with a gate voltage for controlling the travel of those carriers, a semiconductor region formed in the neighborhood of the source region within the body and having a portion located below the source region and another portion extending beyond therefrom toward the drain region and serving to define the channel region and to increase the ratio of the amount of carriers reaching the drain region to the total amount of the carriers supplied from the source region.

Abstract: A high sensitivity semiconductor photo-electric converter is provided by electrically isolating the gate region of a static induction transistor which exhibits non-saturating current versus voltage characteristic. Optically ionized minority carriers are stored in the gate region to control the potential thereof. A semiconductor gate region provided with a insulated gate is very effective to enhance the dynamic range of the converter. Non-saturating characteristic enables enlargement of the output current simply by increasing the drain voltage. A high-speed and high sensitivity image pick-up device can be materialized by integrating a multiplicity of the static induction type photo-electric converter elements. A switching transistor may be merged in the gate region of each photo-electric converter element to enhance the operation speed of the image pick-up device.

Abstract: A multiplicity of field effect type semiconductor memory elements are formed perpendicular to a surface of a semiconductor wafer. Charge carriers are transported in the semiconductor bulk perpendicular to the surface and a potential barrier is formed in the current path to accomplish storing. Since the bulk mobility of a semiconductor is far larger than the surface mobility, the transit time of the carriers is much improved. Furthermore, since each structure of the memory cells is formed perpendicular to the semiconductor surface, the surface occupation area per memory cell is reduced. Thus, a high-speed and high-density semiconductor memory device is provided.

Abstract: An insulated-gate static induction transistor is formed by establishing a potential barrier in a semiconductor region of one conductivity type between the source and the drain regions of the other conductivity type. The height of the potential barrier should be sensitive to the drain voltage as well as to the gate voltage. Therefore, the semiconductor region should have a low impurity concentration and short length. The potential barrier can be established by varying the field effect of the gate voltage in the semiconductor region and/or by the built-in potential between the source region and the semiconductor region.

Abstract: A semiconductor thyristor of the Static Induction type having a split-gate structure, e.g., driving gates and non-driving gates, for controlling cathode-anode current flow. The split-gate structure comprises a plurality of primary gates formed in recesses of the channel region which respond to an external control signal for providing primary current control, and a plurality of secondary non-driving gates which are influenced by electric fields in the channel region extant during thyristor operation for providing secondary current control. In operation, the driving and non-driving gates coact so that the non-driving gates, having an induced potential lower than the potential applied to the driving gates, absorb charge carriers injected in the channel during thyristor operation.

Abstract: A static induction thyristor having a mesh like gate region in front of the cathode, and between the gate region and the cathode a high resistance region having effective impurity concentration of 10.sub.11 cm.sup.-3 -5.times.10.sup.14 cm.sup.-3 is interposed, and the voltage gain decided by the gate length, gate interval and the gate-to-anode distance is made 10 or more so that the forward voltage drop is small, providing high speed switching ability and a large reverse breakdown voltage.

Abstract: A semiconductor device comprises a static induction thyristor and a photosensitive element connected to a gate of the static induction thyristor so that the static induction thyristor is controlled optically. A plurality of the semiconductor devices are easily connected in series and/or in parallel with each other to control a large current and/or voltage.

Abstract: In conducting a liquid phase epitaxial growth of a Zn crystal on a substrate wherein a batch of Se melt serving as a solvent is used and relying on a vapor pressure controlling technique and a temperature difference method, a Zn vapor pressure controlling region is disposed, via the Se melt, in a direction vertical to the surface of the substrate which is contained in the growth region, and a ZnSe source crystal is disposed in such a way that it is supplied into the Se melt in a lateral direction of this melt. Whereby, a ZnSe single crystal having a good cyrstal perfection, and a good linearity of the thickness of the grown crystal relative to time can be obtained.

Abstract: A semiconductor device comprises a semiconductor substrate of a low impurity concentration, a channel region formed on the substrate and having a low impurity concentration, a source region formed on the channel region and having a high impurity concentration of a conductive type opposite to that of the substrate, and a drain region formed on the channel region and having a high impurity concentration of a conductive type opposite to that of the substrate. The source region and the drain region are arranged along a predetermined direction along the substrate. The semiconductor device further includes an accumulating gate region of a conductive type same as that of the substrate, so formed as to surround either one of the source region and drain region, leaving a part of said channel region sandwiched between the source region and the drain region.

Abstract: An insulated-gate type transistor having a semi-conductor body of a low impurity concentration, a heavily-doped source region of a conductivity type opposite to that of the semiconductor body for supplying charge carriers, a heavily-doped drain region for receiving the carriers supplied from the source region, both of which regions may be provided separately in a main surface of the body, a channel region located between the source and drain regions for the travel of these carriers, an insulated-gate structure inputted with a gate voltage for controlling the travel of those carriers, a semiconductor region formed in the neighborhood of the source region within the body and having a portion located below the source region and another portion extending beyond therefrom toward the drain region and serving to define the channel region and to increase the ratio of the amount of carriers reaching the drain region to the total amount of the carriers supplied from the source region.

Abstract: In a static induction type thyristor comprising a low impurity concentration channel region having opposed first and second major surfaces, a first main electrode region having one conductivity type and a second main electrode region having another conductivity type opposite to the one conductivity type and provided on the first and second major surfaces, respectively, and a gate region provided in the vicinity of the first main electrode region, there intervenes, between the channel region and the second main electrode region, a thin layer region having the same conductivity type as that of first main electrode region. The provision of this thin layer reegion contributes to allowing a markedly low impurity concentration as well as a decreased thickness of the channel region for a given maximum forward blocking voltage, making it feasible to obtain a high maximum forward blocking voltage and a high switching speed.

Abstract: In a method of performing a solution growth of a ZnSe crystal using Se as a solvent and relying on the temperature difference technique, the growth is performed under the conditions that the vapor pressure of Zn which is lower than the vapor pressure of Se is applied, under controlled manner, to the solvent during the growth process, in which the value of the Zn vapor pressure is held constant at 7.2 atm. .+-.30%, whereby a ZnSe crystal having a good crystal perfection is obtained.

Abstract: An integrated light-triggered and light-quenched static induction thyristor and fabrication process thereof adapted in such a manner that an integrated SIPT operates in the normal mode in order to enhance current gain, tail current generated at the light-quenching time is reduced in order to enhance turn-off gain, and an buried-gate type of light-triggered static induction thyristor and a photo-darlington circuit composed of a first and second static induction phototransistors are integrated on a high-resistivity substrate in order to permit manufacturing said thyristor compact as a whole in facilitated processes.

Abstract: In performing a solution growth of a Group II-VI compound semiconductor crystal by relying on the temperature difference technique under controlled vapor pressure on a solution growth apparatus having a recrystallizing zone, a source crystal supply zone and a vapor pressure controlling zone enclosed in a growth quartz tube and placed under different temperatures for the respective zones, wherein a heat sink is provided at the bottom end portion of the recrystallizing zone to cause a thermal flow to pass therethrough to the outside of the whole apparatus to insure that a single crystal will grow from this bottom end portion of the zone. The quartz tube may be enclosed in a pressure-resistant tube to apply a pressure to the growth quartz tube externally thereof to avoid its destruction to enable the growth to be performed at a high temperature to obtain a high growth rate. Thus, a large size crystal having a good crystal perfection can be grown.

Abstract: A tunnel injection controlling type semiconductor device comprising a source semiconductor region having a certain conductivity type for supplying carriers, a drain semiconductor region for receiving the carriers, and a gate electrode for controlling the flow of these carriers. A highly-doped semiconductor region having a conductivity type opposite to that of the source semiconductor region is provided in contact with the source region or contained locally in the source region to cause tunnel injection of carriers. The potential level of this highly-doped region is varied by virtue of the static induction effect exerted by the voltage applied to the gate electrode which is provided at a site close to but separate from the highly-doped region, and to the drain semiconductor region.

Abstract: In a static induction type thyristor comprising a low impurity concentration channel region having opposed first and second major surfaces, a first main electrode region having one conductivity type and a second main electrode region having another conductivity type opposite to the one conductivity type and provided on the first and second major surfaces, respectively, and a gate region provided in the vicinity of the first main electrode region, there intervenes, between the channel region and the second main electrode region, a thin layer region having the same conductivity type as that of first main electrode region. The provision of this thin layer region contributes to allowing a markedly low impurity concentration as well as a decreased thickness of the channel region for a given maximum forward blocking voltage, making it feasible to obtain a high maximum forward blocking voltage and a high switching speed.

Abstract: A semiconductor device comprises a static induction thyristor and a photosensitive element connected to a gate of the static induction thyristor so that the static induction thyristor is controlled optically. A plurality of the semiconductor devices are easily connected in series and/or in parallel with each other to control a large current and/or voltage.

Abstract: An insulated-gate static induction transistor is formed by establishing a potential barrier in a semiconductor region of one conductivity type between the source and the drain regions of the other conductivity type. The height of the potential barrier should be sensitive to the drain voltage as well as to the gate voltage. Therefore, the semiconductor region should have a low impurity concentration and short length. The potential barrier can be established by non-uniformalizing the field effect of the gate voltage in the semiconductor region and/or by the built-in potential between the source region and the semiconductor region.

Abstract: A plurality of static induction transistors capable of establishing a controllable potential barrier for charge carriers in the channel region between the source and the drain under the influence of the potentials of the gate and the drain connected in series and integrated in a semiconductor chip to constitute a charge transfer train. The drain of one static induction transistor and the source of the next adjacent static induction transistor are integrated in common into a charge storage region. An insulated electrode is provided on each charge storage region to control the potential thereof. The charge transfer train can be driven by 4-phase, 3-phase or 2-phase signals. The gate electrode and the drain electrode for each transistor may be integrated to form directional 2-phase charge transfer train. Image pick up device of very high operation speed can be materialized with the above charge transfer train.