Patents Assigned to Hanergy New Material Technology Co., Ltd.
  • Publication number: 20200277685
    Abstract: Provided is a recovery method for a copper-indium-gallium-selenium material, mainly comprising the steps of sulfuric acid aeration leaching at a high temperature, reducing selenium with sodium sulfite, separating copper by extracting, separating indium and gallium with an alkali, replacing indium, electrolyzing gallium, etc. In the recovery method for a copper-indium-gallium-selenium material, a sulfuric acid aeration leaching means is used, thus reducing acid gas pollution; at the same time, an extraction agent for copper is used to extract copper, wherein the separating effect is good and the cost is low, and the extracted copper is directly electrolyzed so as to obtain a high-purity metal copper; moreover, an alkali is used to separate gallium, wherein realizing the separation of indium and gallium only requires the adjustment of the pH value of a solution, the separating effect is good and the obtained indium and gallium products have a relatively high purity.
    Type: Application
    Filed: December 26, 2016
    Publication date: September 3, 2020
    Applicant: Hanergy New Material Technology Co., Ltd.
    Inventors: Junfei Liu, Yongtao Gao, Guan Wang, Guofa Wu, Kan Peng
  • Publication number: 20200270724
    Abstract: A method for recycling copper indium gallium selenium materials comprises the steps of sulphating roasting, acid dissolution, extraction and electrolysis of metal copper, production of a gallium hydroxide deposition, replacement of indium, and the like.
    Type: Application
    Filed: December 26, 2016
    Publication date: August 27, 2020
    Applicant: Hanergy New Material Technology Co., Ltd
    Inventors: Yongtao Gao, Junfei Liu, Guan Wang, Guofa Wu, Kan Peng
  • Publication number: 20190378944
    Abstract: The present disclosure relates to a thin film packaging method and device, a thin film packaging system, and a solar cell. The film packaging method includes: forming an inorganic barrier film on an electronic device formed with a metal oxide thin film, the inorganic barrier film being disposed on a surface of the metal oxide thin film; and performing a reduction treatment on the electronic device to cause a reduction reaction of the metal oxide thin film to obtain a corresponding molten metal, wherein the molten metal is filled and cured in a pore of the inorganic barrier film. In the technical solution, the pore in the inorganic barrier layer can be compensated, thereby improving the effect of the film packaging.
    Type: Application
    Filed: August 31, 2018
    Publication date: December 12, 2019
    Applicant: Hanergy New Material Technology Co., Ltd
    Inventors: Pengju Zhang, Shengchun Li, Xiaotian Tan, Zhijian Yu, Yu Zhang
  • Publication number: 20190378939
    Abstract: The present disclosure relates to a solar cell and a manufacturing method therefor. The solar cell includes: a base substrate; an electrode layer set on a surface of the base substrate, the electrode layer set including a first electrode and a second electrode, and the first electrode and the second electrode being electrically insulated from each other; a photoelectric layer disposed on a side of the electrode layer set facing away from the base substrate and electrically connected to the first electrode, the photoelectric layer being provided with a first via, and the position of the first via corresponding to the position of the second electrode; and a window layer disposed on a side of the photoelectric layer facing away from the base substrate and electrically connected to the second electrode through the first via.
    Type: Application
    Filed: September 10, 2018
    Publication date: December 12, 2019
    Applicant: Hanergy New Material Technology Co., Ltd
    Inventors: Pengju Zhang, Shengchun Li, Xiaotian Tan, Zhijian Yu, Zhiqian Su, Yu Zhang
  • Publication number: 20190378942
    Abstract: The present disclosure relates to a thin film package device and a solar cell. The device is used for thin film package of a device to be packaged, and the device includes: a base substrate disposed on a side of the device to be packaged; and a thin film package layer disposed on the other side of the device to be packaged. The thin film package layer includes an inorganic thin film layer and an organic thin film layer, the organic thin film layer includes a first organic thin film layer closest to the base substrate, and the first organic thin film layer includes a plurality of discontinuous first organic thin film blocks. The technical solution can not only achieve the effect of releasing stress, but also can effectively prevent lateral diffusion of moisture above the device to be packaged, thereby avoiding a wide range of moisture erosion.
    Type: Application
    Filed: September 10, 2018
    Publication date: December 12, 2019
    Applicant: Hanergy New Material Technology Co., Ltd
    Inventors: Pengju Zhang, Shengchun Li, Xiaotian Tan, Zhijian Yu, Yu Zhang
  • Publication number: 20190010578
    Abstract: A method for recycling copper indium gallium selenium materials comprises the steps of leaching by using sulfuric acid and hydrogen peroxide, reduction of selenium by using sulfur dioxide, separation of copper by using hydrolysis, alkali separation of indium and gallium, replacement of indium, hydrolysis of gallium, and the like. Leaching is carried out by using sulfuric acid in cooperation with hydrogen peroxide, so that the leaching rate is greatly improved, and acid gas pollution is reduced; PH differential copper is separated by using metal ion hydrolysis, so that costs are low; and in addition, alkali separation of gallium is carried out, separation between indium and gallium can be implemented by merely adjusting the PH of a solution, the separation effect is good, the purities of obtained indium and gallium products are high.
    Type: Application
    Filed: December 26, 2016
    Publication date: January 10, 2019
    Applicant: Hanergy New Material Technology Co., Ltd.
    Inventors: Yongtao GAO, Junfei LIU, Guan WANG, Guofa WU