Abstract: A MEMS device and a manufacturing method thereof. The manufacturing method comprises: forming a CMOS circuit; and forming a MEMS module on the CMOS circuit which is coupling to the MEMS module and configured to drive the MEMS module. Forming the MEMS module comprises: forming a protective layer; forming a sacrificial layer in the protective layer; forming a first electrode on the protective layer and on the sacrificial layer so that the first electrode covers the sacrificial layer, and electrically coupling the first electrode to the CMOS circuit; forming a piezoelectric layer on the first electrode and above the sacrificial layer; forming a second electrode on the piezoelectric layer and electrically coupling the second electrode to the CMOS circuit; forming a through hole to reach the sacrificial layer; and forming a cavity by removing the sacrificial layer through the through hole.

Abstract: A switching converter, control method control circuit thereof are disclosed. The switching converter converts a DC input voltage into a DC output voltage. The control circuit comprising: a compensation module, generating a ramp signal; a comparator, compares a first superimposed signal related to the DC output voltage with a second superimposed signal related to an error signal between the DC output voltage and the ramp signal; a first RS flip-flop generates a pulse width modulation signal in accordance with a set signal and a reset signal, obtains a constant on time in accordance with the reset signal, and obtains an off time related to the DC output voltage; and a driving module which converts the pulse width modulation signal into a switching control signal, wherein the compensation module adaptively adjusts the slope of the ramp signal. The control circuit adopts an adaptive ramp signal to perform compensation.

Abstract: A MEMS microphone and a manufacturing method thereof. The method comprises: sequentially forming a first isolation layer, a diaphragm, and a second isolation layer on a substrate; sequentially forming a first protective layer, a backplate electrode, and a second protective layer on the second isolation layer; forming a release hole penetrating through the first protective layer, the backplate electrode, and the second protective layer; forming an acoustic cavity penetrating through the substrate; releasing the diaphragm through the acoustic cavity and the release hole; and forming a groove on a surface of the first isolation layer, wherein the diaphragm conformally covers the surface of the first isolation layer, thereby forming a spring structure at a position of the groove.

Abstract: Disclosed a MEMS assembly and a manufacturing method thereof. The manufacturing method comprises: forming a groove on a sensor chip; forming a bonding pad on a circuit chip; bonding the sensor chip and the circuit chip together to form a bonding assembly; performing a first dicing process at a first position of the sensor chip to penetrate through the sensor chip to the groove; performing a second dicing process at a second position of the sensor chip to penetrate through the sensor chip and the circuit chip, for obtaining an individual MEMS assembly by singulating the bonding assembly, wherein location of the groove corresponds to a position of the bonding pad, and an opening is formed in the sensor chip to expose the bonding pad when the second dicing process is performed. The method uses two dicing process respectively achieving different depths to expose the bonding pad of the sensor chip and singulate the MEMS assembly, respectively, to improve yield and reliability.

Abstract: A method for manufacturing a power device is disclosed. The method for manufacturing the power device comprises: forming a first doped region on the semiconductor substrate; forming a plurality of second doped regions in a first region of the first doped region; and forming a plurality of third doped regions in a second region of the first doped region. A first charge compensation structure is formed by the first doped region and the plurality of second doped regions, the first charge compensation structure and the semiconductor substrate are located on current channel. A second charge compensation structure is formed by the first doped region and the plurality of third doped regions, the second charge compensation structure is configured to disperse continuous surface electric field of the power device. The power device manufactured by the method not only has a stable blocking voltage and an improved reliability, but also has a reduced on-resistance.

Abstract: A power device is disclosed. The power device comprises: a semiconductor substrate; a first doped region on the semiconductor substrate; a plurality of second doped regions located in a first region of the first doped region; a plurality of third doped regions located in a second region of the first doped region. The plurality of second doped regions are separated with each other at a first predetermined spacing. A first charge compensation structure is formed by the plurality of second doped regions and the first doped region, and the first charge compensation structure and the semiconductor substrate are located on a current channel. The plurality of third doped regions are separated with each other at a second predetermined spacing. A second charge compensation structure is formed by the plurality of third doped regions and the first doped region. The second charge compensation structure is configured to disperse continuous surface electric field of the power device.

Abstract: The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process.

Abstract: The disclosure relates to an error amplification apparatus and a driving circuit including the error amplification apparatus. In the error amplification apparatus according to the disclosure, a pulse generating circuit generates a first pulse and a second pulse in accordance with an output voltage of an error amplification unit, a counting unit being coupled to the pulse generating circuit counts the first pulse and the second pulse, and generates a loop control signal representing a compensation voltage based on the count. The disclosure utilizes the counting unit to digitize the compensation voltage, and the counter value can reflect the compensation voltage, so that the variation of the loop control signal in the AC cycle of 50 Hz or 60 Hz is controlled to be little, thereby filtering out the ripple of AC of 50 Hz or 60 Hz.

Abstract: The disclosure relates to an error amplification apparatus and a driving circuit including the error amplification apparatus. In the error amplification apparatus according to the disclosure, a pulse generating circuit generates a first pulse and a second pulse in accordance with an output voltage of an error amplification unit, a counting unit being coupled to the pulse generating circuit counts the first pulse and the second pulse, and generates a loop control signal representing a compensation voltage based on the count. The disclosure utilizes the counting unit to digitize the compensation voltage, and the counter value can reflect the compensation voltage, so that the variation of the loop control signal in the AC cycle of 50 Hz or 60 Hz is controlled to be little, thereby filtering out the ripple of AC of 50 Hz or 60 Hz.

Abstract: A method for manufacturing a power device is disclosed. The method for manufacturing the power device comprises: forming a first doped region on the semiconductor substrate; forming a plurality of second doped regions in a first region of the first doped region; and forming a plurality of third doped regions in a second region of the first doped region. A first charge compensation structure is formed by the first doped region and the plurality of second doped regions, the first charge compensation structure and the semiconductor substrate are located on current channel. A second charge compensation structure is formed by the first doped region and the plurality of third doped regions, the second charge compensation structure is configured to disperse continuous surface electric field of the power device. The power device manufactured by the method not only has a stable blocking voltage and an improved reliability, but also has a reduced on-resistance.

Abstract: The present disclosure relates to a dielectrically isolated semiconductor device and a method for manufacturing the same. The dielectrically isolated semiconductor device includes a semiconductor substrate, a first semiconductor layer above the semiconductor substrate, a second semiconductor layer above the first semiconductor layer, a semiconductor island in the second semiconductor layer, and a first dielectric isolation layer surrounding a bottom and sidewalls of the semiconductor island. The first dielectric isolation layer includes a first portion which is formed from a portion of the first semiconductor layer and extending along the bottom of the semiconductor island, and a second portion which is formed from a portion of the second semiconductor layer and extending along the sidewalls of the semiconductor island. The dielectrically isolated semiconductor devices needs no an SOI wafer and reduces manufacturing cost.

Abstract: The present invention provides a switching power supply and a controller thereof, wherein the controller comprises: a switching power supply control device having a power supply terminal and detecting a voltage at the power supply terminal; a composite device integrating therein a power transistor and a depletion transistor, wherein the power transistor has a gate coupled to a first input, a source coupled to a first output, and a drain coupled to an input signal terminal; the depletion transistor has a gate coupled to a second input, a source coupled to a second output, and a drain coupled to the input signal terminal; the first input, the second input and the second output are coupled to the switching power supply control device, the first input receives a driving signal generated by the switching power supply control device, and the input signal terminal receives an input signal of the switching power supply.

Abstract: The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process.

Abstract: This invention provides a composite device and a switching power supply. The composite device integrates therein a first enhancement-mode MOS device and a depletion-mode MOS device, and comprises: an epitaxial region of a first doping type; a first well region and a second well region formed in parallel on the front side of the epitaxial region; a first doped region of the first doping type formed within the first well region; a gate of the first enhancement-mode MOS device; a second doped region of the first doping type formed within the second well region; a channel region of the first doping type, wherein the channel region extends from a boundary of the second well region to a boundary of the second doped region; and a gate of the depletion-mode MOS device. The switching power supply includes the composite device above. This invention can decrease the process complexity, reduce the chip area and cost, and may be applicable to high power scenarios.

Abstract: The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process.

Abstract: This invention provides a composite device and a switching power supply. The composite device integrates therein a first enhancement-mode MOS device and a depletion-mode MOS device, and comprises: an epitaxial region of a first doping type; a first well region and a second well region formed in parallel on the front side of the epitaxial region; a first doped region of the first doping type formed within the first well region; a gate of the first enhancement-mode MOS device; a second doped region of the first doping type formed within the second well region; a channel region of the first doping type, wherein the channel region extends from a boundary of the second well region to a boundary of the second doped region; and a gate of the depletion-mode MOS device. The switching power supply includes the composite device above. This invention can decrease the process complexity, reduce the chip area and cost, and may be applicable to high power scenarios.

Abstract: The present invention provides a switching power supply and a controller thereof, wherein the controller comprises: a switching power supply control device having a power supply terminal and detecting a voltage at the power supply terminal; a composite device integrating therein a power transistor and a depletion transistor, wherein the power transistor has a gate coupled to a first input, a source coupled to a first output, and a drain coupled to an input signal terminal; the depletion transistor has a gate coupled to a second input, a source coupled to a second output, and a drain coupled to the input signal terminal; the first input, the second input and the second output are coupled to the switching power supply control device, the first input receives a driving signal generated by the switching power supply control device, and the input signal terminal receives an input signal of the switching power supply.

Abstract: The invention provides a MEMS device, semiconductor device, and method for manufacturing the same. The MEMS device comprises an enclosed cavity, the cavity having an inner wall extending in a first plane, the inner wall including a film deposition region for depositing a getter film, wherein one or more grooves are formed in the film deposition region, the angle between the sidewalls of the grooves and the first plane is more than 0° and less than 180°, and the getter film overlays the sidewall of the grooves. The invention can form the getter film in a smaller incident flux angle with a common sputtering, evaporation apparatus, that is, form the porous, high roughness getter.

Abstract: A switch-mode power supply control apparatus includes a PWM controller for outputting a driving signal and a short-circuit protection module coupled to a detection terminal. The detection terminal receives a zero-crossing detection voltage. If the time that the detection voltage input to the detection terminal is lower than a first reference voltage exceeds a predetermined time period, the short-circuit protection module determines that a short-circuit abnormal situation occurs, the short-circuit protection module outputs a short-circuit signal to the PWM controller, and the driving signal output by the PWM controller becomes a turn-off signal. If the short-circuit protection module does not detect the short-circuit abnormal situation, the PWM controller operates normally. A flyback switch-mode power supply includes the switch-mode power supply control apparatus. The flyback switch-mode power supply has a low power consumption when a short-circuit protection is taking place.

Abstract: The present invention discloses a primary-side controlled switch-mode power supply controller for driving LED with constant current and method thereof as well as an apparatus for controlling switch-mode power supply having the switch-mode power supply controller. The switch-mode power supply controller includes an input dimming phase detection circuit, a multiplier, a turn-on signal control circuit, a zero-crossing detection circuit, a comparator, a trigger and a driving circuit. The circuit controls to drive LED with constant current by means of a primary-side controlled method. The circuit realizes the triac dimming function, ensures a constant output current regardless of a high voltage or a low voltage, and obtains a high power factor. The direct use of the isolation transformer improves the safety of the circuit, and simplifies the peripheral circuit, thereby reducing the cost of the circuit and minimizing the size of the PCB layout, which is favorable in minimizing the product.