Abstract: An organic electroluminescent material, an organic electroluminescent device, a quantum dot electroluminescent unit, and a quantum dot electroluminescent device are disclosed. The quantum dot electroluminescent unit includes a plurality of electro-phosphorescent quantum dots and at least an organic electroluminescent material, and the electro-phosphorescent quantum dots disperse in the organic electroluminescent material.

Abstract: A shift register and a display apparatus are provided. The shift register includes a pre-charge unit, a pull-up unit, a first pull-down unit and a second pull-down unit. The pre-charge unit receives first and second input signals, and outputs a pre-charge signal via a first node. The pull-up unit receives a pre-charge signal and a clock signal, and outputs a scanning signal via a second node. The first pull-down unit receives the pre-charge signal, first and second pull-down control signals, and controls whether to pull-down the scanning signal to a reference voltage level. The second pull-down unit receives the pre-charge signal, first and second pull-down control signals, and controls whether to keep the scanning signal at the reference voltage level. The duty cycle of the clock signal is less than 50 percent.

Abstract: The in-cell touch display panel includes the following units. Multiple pixel regions are disposed in areas of the display area enclosed by gate lines that are intersected the data lines, in which each pixel region includes a pixel structure, and each pixel structure includes a pixel electrode. A common electrode includes multiple touch electrodes, in which each touch electrode corresponds to more than one pixel electrodes. A sub-common electrode is a portion of the touch electrode. The data lines and the sub-common electrodes are disposed on the same insulation layer. A metal connection structures is electrically connected to two adjacent ones of the sub-common electrodes along the second direction. The metal connection structure and the data lines are formed by different metal layers.

Abstract: A quantum tube includes a tube body, a plurality of first fluorescent particles and a plurality of second fluorescent particles. The tube body has a light incident surface, a light emitting surface, a top surface and a bottom surface. The top surface is connected between the light incident surface and the light emitting surface. The bottom surface is connected between the light incident surface and the light emitting surface. The top surface is opposite to the bottom surface. The top surface has an inclined portion. The inclined portion inclines with respect to the bottom surface by an angle. The first fluorescent particles are disposed in the tube body. The second fluorescent particles are disposed in the tube body.

Abstract: An anti-interference touch sensing structure includes a first substrate, a plurality of touch sensing units and at least a first anti-interference spot. The touch sensing units are coplanarly disposed on the first substrate, and a first interval region is formed between the adjacent touch sensing units. The first anti-interference spot is disposed within the first interval region.

Abstract: An optoelectronic modulation stack includes a substrate, a plurality of touch sensing units, at least a first anti-interference spot and a nano-structural layer. The touch sensing units are coplanarly disposed on the substrate, and a first interval region is formed between the adjacent touch sensing units. The first anti-interference spot is disposed within the first interval region, and the width of the first anti-interference spot is substantially less than that of the substrate or touch sensing unit. The nano-structural layer is disposed below the first anti-interference spot and includes a plurality of nano structures. When the light passes through the nano structures and the first anti-interference spot, the optical characteristic of the light is changed.

Abstract: An organic electroluminescent touch panel includes a protection unit, a plurality of touch-sensing units, at least one first anti-interference spot, a substrate, a first electrode layer, an organic layer stack and a second electrode layer. The touch-sensing units are coplanarly disposed on the protection unit. A first interval region is formed between the adjacent touch-sensing units. The first anti-interference spot is disposed within the first interval region. The substrate is disposed corresponding to the protection unit. The first electrode layer is disposed on the substrate, the organic layer stack is disposed on the first electrode layer, and the second electrode layer is disposed on the organic layer stack. The first electrode layer, the organic layer stack and the second electrode layer are disposed within the space formed by the protection unit and the substrate.

Abstract: The invention discloses a gate driving circuit and a display device. The gate driving circuit includes first to eighth dock signal lines and first to Nth stage first shift registers, where N is an integer greater than or equal to 9. The first to eighth clock signal lines are configured to provide first to eighth clock signals, respectively. The ith stage first shift register is coupled to one of the first to eighth clock signal lines and receives one of the first to eighth clock signals, a first input signal and a second input signal and outputs an ith stage first output signal, where i is any integer from 1 to N.

Abstract: A manufacturing method of an anti-interference flexible electronic structure formed by a carrier separation process comprises the steps of: providing a carrier; attaching a flexible substrate to the carrier; forming a plurality of touch-sensing units coplanarly on the flexible substrate, wherein a first interval region is formed between the adjacent touch-sensing units; coplanarly forming at least a first anti-interference spot within the first interval region, wherein a distance is between the first anti-interference spot and the adjacent touch-sensing unit; and separating the flexible substrate from the carrier.

Abstract: A thin film transistor is provided, and includes a gate electrode, a first gate dielectric layer, a second gate dielectric layer, a channel layer, a source electrode and a drain electrode. The gate electrode is disposed on a substrate. The first gate dielectric layer is disposed on the gate electrode and the substrate, and has a radio of the number of silicon-hydrogen bonds to the number of nitrogen-hydrogen bonds, in which the ratio is between 0.2 and 1.0. The second gate dielectric layer is disposed on the first gate dielectric layer, and has a radio of the number of silicon-hydrogen bond to the number of nitrogen-hydrogen bonds, in which the ratio is between 0.01 and 0.2. The channel layer is disposed on the second gate dielectric layer. The source electrode and drain electrode are disposed on the channel layer and located at two opposite sides of the channel layer.

Abstract: A display device and a method for manufacturing the same are provided. The display device includes a first substrate, a second substrate and a light curable sealant. The first substrate has a displaying area and a non-displaying area, in which the displaying area includes a pixel array, and the non-displaying area includes a driving circuit. The driving circuit includes at least a capacitor which is made of transparent conductive material. The second substrate has an opaque area. The light curable sealant is located between the first substrate and the second substrate. When viewing from a normal vector of the first substrate or the second substrate, the light curable sealant, the capacitor and the opaque area are at least partially overlapped with each other.

Abstract: An annular display device includes a display module, a touch module and a flexible circuit board. The display module includes a first flexible substrate, a thin film transistor element layer and an organic light emitting layer. The touch module includes a second flexible substrate and a touch sensing layer. In the method for fabricating the annular display device, the display module and the touch module are first provided, and then the touch module is disposed on the display module. Then, the flexible circuit board is electrically connected to one of the display module and the touch module. Thereafter, the display module and the touch module are bent to enable each of the first flexible substrate and the second flexible substrate to have a ring shape. Then, the flexible circuit board is electrically connected to one of the display module and the touch module.

Abstract: A display device and a method for manufacturing the same are provided. The display device includes a first substrate, a second substrate and a light curable sealant. The first substrate has a displaying area and a non-displaying area, in which the displaying area includes a pixel array, and the non-displaying area includes a driving circuit. The driving circuit includes at least a capacitor which is made of transparent conductive material. The second substrate has an opaque area. The light curable sealant is located between the first substrate and the second substrate. When viewing from a normal vector of the first substrate or the second substrate, the light curable sealant, the capacitor and the opaque area are at least partially overlapped with each other.

Abstract: A method for manufacturing a semiconductor device is provided. The method comprises the steps of: providing a transparent substrate having a visible region and an invisible region; forming a gate and at least an alignment mark coplanarly on the transparent substrate, wherein the gate is located in the visible region and the alignment mark is located in the invisible region; forming a gate insulation layer to cover the gate and cover the alignment mark; forming an oxide semiconductor layer on the gate insulation layer above the gate; and forming an etching stop layer above the gate and the alignment mark.

Abstract: A manufacturing method of a semiconductor device comprises the steps of: providing a transparent substrate; forming a gate electrode on the transparent substrate; forming a gate insulation layer covering the gate electrode; forming an oxide semiconductor layer on the gate insulation layer and at least partially over the gate electrode; forming an etching stop layer over the gate electrode and at least covering a part of the oxide semiconductor layer, wherein the etching stop layer includes an opening; forming an electrode layer at the opening and on a part of the etching stop layer; and applying a low-resistance treatment to a part of the oxide semiconductor layer uncovered by the etching stop layer and the electrode layer to form a pixel electrode.

Abstract: A smart monitor system includes a hand-held electronic device and a monitor. The hand-held electronic device includes a panel, a control unit, a touch-sensing cover and a wireless communication unit. The touch-sensing cover has a cover and a touch-sensing structure. The cover is disposed on the side of the hand-held electronic device opposite the panel. Partial or total area of the touch-sensing structure is disposed on the cover. The touch-sensing structure is electrically connected to the control unit. The wireless communication unit has a wireless communication chip and an antenna. The wireless communication chip is electrically connected to the control unit, and the antenna is disposed on the touch-sensing cover. The smart monitor system can communicate with and controls the monitor through the hand-held electronic device for various application.