Abstract: The present disclosure is directed to a negative electrode active material for lithium secondary batteries, to a method for preparing the same, and to a lithium secondary battery including the same, the negative electrode active material including a porous core in which scaly silicon fragments are connected in an entangled manner; and a shell layer covering the core, where the shell layer includes a carbon-based material and silicon, and the shell layer has a thickness in a range of more than 10 to less than 60% with respect to an average particle diameter D50 of the negative electrode active material.
Abstract: The present disclosure is directed to a negative electrode active material for lithium secondary batteries, to a method for preparing the same, and to a lithium secondary battery including the same, the negative electrode active material including a porous core in which scaly silicon fragments are connected in an entangled manner; and a shell layer covering the core, where the shell layer includes a carbon-based material and silicon.
Abstract: The disclosure relates to an anode active material having a core-shell structure, the anode active material including a core including porous spherical particles including metal particles and amorphous carbon, and a shell including one or more of crystalline carbon and amorphous carbon, in which the metal particles of the core are physically connected to each other through the amorphous carbon of the core, a method of preparing the same, and a lithium secondary battery including the same.
Type:
Application
Filed:
September 14, 2023
Publication date:
March 21, 2024
Applicant:
HANSOL CHEMICAL CO., LTD
Inventors:
Byunghoon Park, Sunghwan Kang, Minkyung Gong, Jooyeon Park, Seman Kwon
Abstract: The present disclosure relates to an anode slurry composition for secondary batteries, comprising an anode active material; and a binder including a copolymer of (meth)acrylic acid monomer, acrylonitrile-based monomer, and (meth)acrylamide monomer, wherein a value obtained by dividing an absolute value of a zeta potential of the binder by an oxygen content per specific surface area of the anode active material is in a range from 0.6×10?5 mV·m2/g to 2.0×10?5 mV·m2/g.
Type:
Application
Filed:
December 22, 2020
Publication date:
February 8, 2024
Applicant:
HANSOL CHEMICAL CO.,LTD.
Inventors:
Chang Beom KIM, Sae Wook OH, Bo Ok JANG, Shi Jin SONG, Ji Hye PARK, Go Eun LEE, Hyeon Ji GWON, Jin Ju EOM
Abstract: The present invention provides a dual-curable hybrid adhesive composition including a photo-initiator, a thermal initiator, and a thiol group-containing compound, and more particularly, to an adhesive composition which may be cured through a single curing by ultraviolet (UV) light or heat, and where thermal curing proceeds concurrently with UV curing by a heat generated during the UV curing such that even a light shield portion which may not transmit UV light therethrough may be sufficiently cured.
Type:
Application
Filed:
December 5, 2019
Publication date:
January 19, 2023
Applicant:
HANSOL CHEMICAL CO.,LTD.
Inventors:
Chanho SHIN, Joohan WOO, Cheolwoo LEE, Sungmin HA, Chunrae NAM
Abstract: The present invention relates to quantum dot-polymer composite particles and a method for preparing same, the composite particles comprising: quantum dots; and a (meth)acrylic polymer coating layer formed to surround the surface of the quantum dots, and to a technology for expanding the application of quantum dots which can ensure high stability and excellent luminous efficiency by including the polymer coating layer.
Type:
Application
Filed:
September 3, 2020
Publication date:
November 24, 2022
Applicant:
HANSOL CHEMICAL CO.,LTD.
Inventors:
Jaehong NOH, Gyucheol YOON, Kyeonghun GIL, Kyungnam KIM, Sungmin HA, Chunrae NAM
Abstract: The present invention relates to a method for producing a high yield of an organometallic compound including a step of allowing a metal hexacarbonyl compound to react with a hexahydro-1,3,5-triazine compound, and a thin film having excellent properties, fabricated by depositing the produced organometallic compound.
Type:
Application
Filed:
April 18, 2022
Publication date:
November 10, 2022
Applicants:
HANSOL CHEMICAL CO., LTD., Industry-Academic Cooperation Foundation, Yonsei University
Inventors:
Jin-Hyung SEO, Mi-Ra PARK, Jang-Hyeon SEOK, Jung-Woo PARK, Hyung-Jun KIM, Tae-Wook NAM, Yu-Jin LEE
Abstract: The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and particularly to nickel and cobalt precursors capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having superior thermal stability and reactivity, and a method of preparing the same.
Type:
Grant
Filed:
April 27, 2018
Date of Patent:
November 8, 2022
Assignee:
HANSOL CHEMICAL CO., LTD.
Inventors:
Jung Woo Park, Jang-Hyeon Seok, Hyo-Suk Kim, Min-Sung Park
Abstract: The present invention relates to precursor compounds, and more particularly to nonpyrophoric precursor compounds suitable for use in thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD), and to an ALD/CVD process using the same.
Abstract: The present disclosure relates to an ion-conductive polymer, an electrode including the same, and a lithium secondary battery including the electrode. The ion-conductive polymer includes a first monomer represented by Formula 1 below. In Formula 1, A, L1 to L2, L11, a1 to a2, a11, R1 to R3, and n1 to n2 are as defined in the detailed description.
Type:
Application
Filed:
August 20, 2020
Publication date:
August 25, 2022
Applicants:
Samsung SDI Co., Ltd., Hansol Chemical Co., Ltd.
Inventors:
Jungmin Lee, Minjae Kim, Yuhyun Kim, Changbeom Kim, Jihye Park, Seunghyun Oh
Abstract: The present invention relates to a compound that is capable of being used in thin-film deposition using vapor deposition. Particularly, the present invention relates to a rare earth compound, which is capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which has excellent thermal stability and reactivity, a rare earth precursor including the same, a method of manufacturing the same, and a method of forming a thin film using the same.
Type:
Grant
Filed:
December 27, 2018
Date of Patent:
August 16, 2022
Assignee:
HANSOL CHEMICAL CO., LTD.
Inventors:
Jung-Woo Park, Jang-Hyeon Seok, Hyo-Suk Kim, Eun-Jeong Cho
Abstract: The present invention relates to a vapor deposition compound enabling thin-film deposition through vapor deposition, and more particularly to a novel cobalt precursor, which can be applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and exhibits superior reactivity, volatility and thermal stability, a method of preparing the same and a method of manufacturing a thin film using the same.
Type:
Grant
Filed:
December 27, 2018
Date of Patent:
August 2, 2022
Assignee:
HANSOL CHEMICAL CO., LTD.
Inventors:
Jung-Woo Park, Jang-Hyeon Seok, Hyo-Suk Kim, Ming-Sung Park
Abstract: The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition, and particularly to a silicon precursor capable of being applied to ALD or CVD, and specifically, enabling high temperature deposition, and a method of manufacturing a silicon-containing thin film.
Type:
Grant
Filed:
April 24, 2019
Date of Patent:
March 8, 2022
Assignee:
Hansol Chemical Co., Ltd.
Inventors:
Jae-Seok An, Jong-Ryul Park, Min-Hyuk Nim, Jang-Hyeon Seok, Jung Woo Park
Abstract: An organometallic compound, which enables thin-film deposition through vapor deposition, and particularly to a Co or Fe precursor, which is suitable for use in atomic layer deposition or chemical vapor deposition, and a method of preparing the same.
Type:
Grant
Filed:
September 30, 2016
Date of Patent:
December 28, 2021
Assignee:
HANSOL CHEMICAL CO., LTD.
Inventors:
Jung Woo Park, Donghak Jang, Yeong Eun Kim, Hyo-Suk Kim, Kwang Soo Lim
Abstract: The present invention relates to a vapor deposition compound which serves to deposit a thin film through vapor deposition. More particularly, the present invention relates to vapor deposition zirconium, titanium, and hafnium precursors which are applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which have low viscosity, excellent thermal stability, and fast self-saturation, and a method of preparing the same.
Type:
Grant
Filed:
July 25, 2017
Date of Patent:
November 26, 2019
Assignee:
Hansol Chemical Co., Ltd.
Inventors:
Jung-Woo Park, Hong-Ki Kim, Mi-Ra Park, Jun-Hyuck Kwon
Abstract: A method of depositing a ruthenium metal thin film or ruthenium oxide thin film comprising a ruthenium compound used for depositing metallic Ru or RuO2 thin film on a substrate via atomic layer deposition, and the ruthenium compound represented by Chemical Formula 1, wherein L is a ligand selected from the group consisting of 1-ethyl-1,4-cyclohexadiene, 1,3-butadiene, and isoprene.
Type:
Grant
Filed:
March 30, 2012
Date of Patent:
May 24, 2016
Assignee:
HANSOL CHEMICAL CO., LTD.
Inventors:
Jung Woo Park, Jun Young Kim, Kwang deok Lee, Whee Won Jin
Abstract: The present invention relates to a ruthenium compound including a specific ligand structure of 1-ethyl-1,4-cyclohexadiene, 1,3-butadiene or isoprene and having superior thermal stability, vaporizing property and step coverage, and a thin film deposited using same.
Type:
Application
Filed:
March 30, 2012
Publication date:
February 19, 2015
Applicant:
HANSOL CHEMICAL CO., LTD.
Inventors:
Jung Woo Park, Jun Young Kim, Kwang deok Lee, Whee Won Jin