Abstract: A resistor in an integrated circuit having a conductive shield layer between the resistor and an insulative layer. The contacts of the resistor may also contact the conductive shield layer. The shield layer may be formed during a single or double level polysilicon bipolar transistor fabrication process.
Type:
Grant
Filed:
October 1, 1991
Date of Patent:
April 6, 1993
Assignee:
Harris Semiconductor Corporation
Inventors:
Christopher K. Davis, Thomas L. Carndell