Patents Assigned to Hashimoto Chemical Co., Ltd.
  • Patent number: 6077561
    Abstract: A metal material characterized in that the material comprises a substrate metal, a film comprising a nickel fluoride layer and formed on the substrate metal, and a film comprising a carbon layer and formed on the film.
    Type: Grant
    Filed: January 27, 1998
    Date of Patent: June 20, 2000
    Assignees: Hashimoto Chemical Co., Ltd., Mitsubishi Aluminum Co., Ltd.
    Inventors: Tadahiro Ohmi, Kazuo Chiba, Hideo Kume, Yutaka Mikasa, Matagoro Maeno, Yoshinori Nakagawa, Hiroto Izumi, Kazuhito Yamane
  • Patent number: 5837323
    Abstract: A method of improving the surface of polypropylene product characterized is that the surface of polypropylene product is improved by contacting with diluted fluorine gas of concentration of 0.1-10% for 1-30 minutes to make it hydrophilic with the surface contact angle 80 degrees or less.
    Type: Grant
    Filed: August 17, 1995
    Date of Patent: November 17, 1998
    Assignee: Hashimoto Chemical Co., Ltd.
    Inventors: Tugio Hashimoto, Matagoro Maeno, Ryoji Hirayama
  • Patent number: 5725907
    Abstract: A metal material characterized in that the material comprises a substrate metal, a film comprising a nickel fluoride layer and formed on the substrate metal, and a film comprising a carbon layer and formed on the film.
    Type: Grant
    Filed: October 16, 1996
    Date of Patent: March 10, 1998
    Assignees: Hashimoto Chemical Co., Ltd., Mitsubishi Aluminum Co., Ltd.
    Inventors: Tadahiro Ohmi, Kazuo Chiba, Hideo Kume, Yutaka Mikasa, Matagoro Maeno, Yoshinori Nakagawa, Hiroto Izumi, Kazuhito Yamane
  • Patent number: 5605742
    Abstract: A metal material characterized in that the material comprises a substrate metal, a film comprising a nickel fluoride layer and formed on the substrate metal, and a film comprising a carbon layer and formed on the film.
    Type: Grant
    Filed: September 27, 1995
    Date of Patent: February 25, 1997
    Assignees: Hashimoto Chemical Co. Ltd., Mitsubishi Aluminum Co., Ltd.
    Inventors: Tadahiro Ohmi, Kazuo Chiba, Hideo Kume, Yutaka Mikasa, Matagoro Maeno, Yoshinori Nakagawa, Hiroto Izumi, Kazuhito Yamane
  • Patent number: 5318706
    Abstract: A method of preparing hydrofluoric acid of high purity at the point of use by causing molecular diffusion of hydrogen fluoride into ultrapure water through a resin membrane. The high-purity acid is available at the site of use free of contamination that would occur during transport from a site of preparation.
    Type: Grant
    Filed: March 6, 1992
    Date of Patent: June 7, 1994
    Assignee: Hashimoto Chemical Co., Ltd.
    Inventors: Tadahiro Ohmi, Nobuhiro Miki, Matagoro Maeno, Ryozi Hirayama