Patents Assigned to Hashimoto Chemical Industries Co., Ltd.
  • Patent number: 5277835
    Abstract: A surface treatment agent containing a solution of hydrogen fluoride, ammonium fluoride and water, the solution containing less than 8 weight % of hydrogen fluoride (HF) and less than 15 weight % of ammonium fluoride (NH.sub.4 F).
    Type: Grant
    Filed: April 21, 1993
    Date of Patent: January 11, 1994
    Assignee: Hashimoto Chemical Industries Co., Ltd.
    Inventors: Tadahiro Ohmi, Masahiro Miki, Hirohisa Kikuyama
  • Patent number: 5100495
    Abstract: Dry etching apparatus composed of any of metal, silica, ceramic or combination thereof with a processing chamber in which substrates are placed and a diluted anhydrous hydrogen fluoride gas generator, the processing chamber being connected to the diluted anhydrous hydrogen fluoride gas generator through a pipe line of stainless steel or nickel. There is also disclosed a dry-etching method with the dry-etching apparatus, and a diluted anhydrous hydrogen gas generator used in the dry-etching apparatus and dry-etching method.
    Type: Grant
    Filed: April 8, 1991
    Date of Patent: March 31, 1992
    Assignee: Hashimoto Chemical Industries Co., Ltd.
    Inventors: Tadahiro Ohmi, Masahiro Miki, Hirohisa Kikuyama, Matagoro Maeno
  • Patent number: 5073232
    Abstract: Disclosed is a dry-etching apparatus composed of any of metal, silica, ceramic or combination thereof including a processing chamber in which substrates are placed and a diluted anhydrous hydrogen fluoride gas generator, the processing chamber being connected to the diluted anhydrous hydrogen fluoride gas generator through a pipe line of such metal as stainless steel or nickel. There is also provided according to the invention a dry-etching method with the dry-etching apparatus, a cooled anhydrous hydrogen fluoride gas source and a diluted anhydrous hydrogen gas generator used in the dry-etching apparatus and dry-etching method.
    Type: Grant
    Filed: December 21, 1989
    Date of Patent: December 17, 1991
    Assignee: Hashimoto Chemical Industries Co., Ltd.
    Inventors: Tadahiro Ohmi, Masahiro Miki, Hirohisa Kikuyama, Matagoro Maeno
  • Patent number: 4806332
    Abstract: A method for preventing anhydrous potassium fluoride from solidification by causing the anhydrous potassium fluoride to absorb carbon dioxide gas.
    Type: Grant
    Filed: December 28, 1987
    Date of Patent: February 21, 1989
    Assignee: Hashimoto Chemical Industries Co., Ltd.
    Inventor: Nobuhiro Miki
  • Patent number: 4795582
    Abstract: A surface treating composition for micro processing which comprises a mixture of hydrofluoric acid, ammonium fluoride solution and water, and at least one compound selected from the group of surfactants consisting of aliphatic carboxylic acids, salts of aliphatic carboxylic acids, aliphatic amines and aliphatic alcohols.
    Type: Grant
    Filed: September 21, 1987
    Date of Patent: January 3, 1989
    Assignee: Hashimoto Chemical Industries Co., Ltd.
    Inventors: Tadahiro Ohmi, Nobuhiro Miki, Hirohisa Kikuyama
  • Patent number: 4668497
    Abstract: A process for purifying hydrogen fluroide characterized by adding fluorine to hydrogen fluoride containing at least one element selected from the group consisting of boron, silicon, phosphorus, sulfur, chlorine and arsenic, and/or at least one compound of these elements, reacting the fluorine with said element and/or said compound and distilling the resulting mixture.
    Type: Grant
    Filed: December 24, 1985
    Date of Patent: May 26, 1987
    Assignee: Hashimoto Chemical Industries Co., Ltd.
    Inventor: Nobuhiro Miki