Abstract: A method and an apparatus for coating substrates is described in which the layer to be applied is produced by the condensing particles of a plasma generated by a gas discharge which are incident on the substrates. Both an arc discharge vaporization coating process and a cathode sputtering coating process are effected in the same apparatus, and the arc discharge vaporization process is carried out before the cathode sputtering process.

Abstract: Apparatus comprises a vacuum chamber (1) accommodating a source (2) of ion flow directed toward the surface being machined, and a system (3) for decelerating ion flow. The system (3) includes a shielding electrode (5) positioned before the workpieces (4) and having a hole (7) for the passage of ion flow, and at least one decelerating electrode (6) electrically insulated from the walls of the vacuum chamber (1) and shielding electrode (5). The decelerating electrode (6) has the form of a magnetic element whose magnetization vector (M) is substantially congruent with the workpiece surface being machined. In addition, line (13) of electron drift current is closed in a direction transverse of the direction of the ion flow.

Abstract: A vaporizer is described for use in an apparatus for the coating of substrate under vacuum, the vaporizer comprising a holder and a target plate releasably securable to the holder, with the target plate being acted on at its rear side by a coolant medium which flows through the holder. In order to make rapid interchange of the target plate possible while simultaneously optimizing the cooling, the target plate is fixed to the holder via a clamped connection with intermeshing clamping surfaces.

Abstract: A method and apparatus for controlling thin layer sputtering, especially titanium-nitride-type hard, abrasion-proof layers. Ionization current on substrates, especially at greater distances from cathode, is increased and layers are more homogenous. Density and homogeneity of both ionization and electron current on substrates are increased and ionic cladding during layer sputtering and with floating potential of substrates is possible. Substrates are placed in a holding space defined by lines of force of a magnetic multipolar field that includes a closed tunnel of magnetron-type lines of force above the sputtered cathode and whose direction on the boundary of the holding space alternates from positive to negative polarity and vice versa. In the holding space, interaction of the glow discharge with the magnetic multipolar field forms a homogenous plasma whose particles bombard the substrates.

Abstract: A monoenergetic ion source for the generation of an ion beam is described with the ion energies which lie below 100 eV and also above 5 keV being capable of being freely selected so that the whole range of intermediate energies and independently of the selected ion current density with the aid of the operating parameters of the source. The ion current density is so freely adjustable independently of the ion energy. The ion source is provided with an optical beam focussing system and can in particular also be used to produce metal ions. This ion source also makes a special coating process possible which is likewise described here.