Abstract: A lamp head for decorative light string includes a luminous body, a pair of wires, a lamp base and a lamp shade, the luminous body electrically connected with wires, the lamp base formed by injection moulding and covers part of the packaging body and part of wires and electrode pins that between the packaging body and the wires, the lamp shade is assembled with the lamp base. The lamp base is provided with a plurality of holes, which connect the inner space of the lamp head with the outer space of the lamp head. Thus, water vapor produced in the inner of the lamp head can be expelled freely from the holes, so the decorative light string can remain normal operation to extend its life.

Abstract: A lamp body used in a LED light string comprises: a light-emitting chip which is installed on the frame, a package colloid which is provided to cover the top of the frame, wherein a lamp holder which covers the two leads and a part of the wires is provided beneath the package colloid and forms an integral unit with the package colloid, two leads and wires, so that it is capable of eliminating the potential problem as water inleakage at the joint of the package colloid and the lamp holder, and the waterproof ability is greatly improved. Meanwhile, the process of assembling the package colloid to the lamp holder by hand can be cancelled, so that mass production by machine can be realized efficiently.

Abstract: A method of manufacturing light emitting diode has steps of providing a package base, providing a light emitting structure and bonding the light emitting structure on the package base. The package base has a first metal layer and a second metal layer respectively formed on a top and a bottom thereon. The light emitting structure has a substrate, a light emitting lamination and a reflective metal layer. The light emitting lamination is formed on the substrate and has an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer and a transparent electrode layer deposited on the substrate in sequence. The reflective metal layer is formed on a bottom of the substrate. The first metal layer is connected to the reflective metal layer by an ultrasonic thermal press technique. Therefore, the thermal resistance of the finished LED reduces.

Abstract: An LED device has a substrate, an N-type semiconductor layer formed on the substrate, a light-emitting layer on the N-type semiconductor layer, a P-type semiconductor layer on the light-emitting layer and a transparent electrode layer formed on the P-type semiconductor layer. A top surface of the transparent electrode layer is formed to have multiple micro concave-convex structures to mitigate the light-emitting loss resulted from total reflection, and increase the light-emitting efficiency of the LED device.

Abstract: A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified.

Abstract: A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified.

Abstract: A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified.

Abstract: An improved color changeable tube light includes a opaque core line, a plurality of LEDs being arranged in the core line, a translucent diffuser with the same length as the core line, a cladding layer having the same length as the core line and covering the core line and being formed by extrusion molding integrally with the diffuser into one piece. A unit is formed by disposing a red LED, a green LED and a blue LED of the plurality of LEDs into a fixing means, a plurality of the units are connected in series and disposed in the plurality of transversal through-holes of the core line respectively. The fixing means may be a box. The box may be quadrate, round or elliptic in shape. The tube light of the present invention to have the effects of light beams of neon light, and the color changing and the color mixing to obtain various results are available.

Abstract: A method for generating low color temperature light and a light emitting device adopting the same, comprise a LED component, phosphor capable to be excited by the emission light of the LED component, and a package colloid for encapsulating the LED component and the phosphor, wherein the package colloid is provided with a electrode lead for connecting the LED component with the external power supply, the peak wavelength of emission light of the LED light is 460-500 nm, the peak wavelength of emission light of the excited phosphor is 580-630 nm. The present invention only use one chip and one kind of phosphor to generate the low color temperature light which is of the same effect as that of the minitype tungsten lamp or the high pressure sodium lamp, and is of advantages including energy saving, low cost and environmental protection, etc. The present invention can be widely used in the manufacturing process of LED lamp of low color temperature, especially in the manufacturing the mini LED bulb.

Abstract: A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified.

Abstract: A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified.

Abstract: A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified.

Abstract: A power limiting circuit for controlling the power of the incandescent lamp not to overrun the rated power limit includes a sampling circuit that consists of two resistors connected in parallel. A control chip compares the received sample voltage with the standard voltage then outputs control signal to drive the conduction of a SCR (silicon controlled rectifier) to change the inner states of contacts of a relay so as to further control the on/off between the input and the output. Based on this control process and technique, this invention prevents the employment of incandescent lamps having a greater power than power rating. Besides, a bi-operational amplifier circuit is used to fulfill the whole examination and control perfectly.

Abstract: A method of manufacturing light emitting diode has steps of providing a package base, providing a light emitting structure and bonding the light emitting structure on the package base. The package base has a first metal layer and a second metal layer respectively formed on a top and a bottom thereon. The light emitting structure has a substrate, a light emitting lamination and a reflective metal layer. The light emitting lamination is formed on the substrate and has an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer and a transparent electrode layer deposited on the substrate in sequence. The reflective metal layer is formed on a bottom of the substrate. The first metal layer is connected to the reflective metal layer by an ultrasonic thermal press technique. Therefore, the thermal resistance of the finished LED reduces.

Abstract: An LED device has a substrate, an N-type semiconductor layer formed on the substrate, a light-emitting layer on the N-type semiconductor layer, a P-type semiconductor layer on the light-emitting layer and a transparent electrode layer formed on the P-type semiconductor layer. A top surface of the transparent electrode layer is formed to have multiple micro concave-convex structures to mitigate the light-emitting loss resulted from total reflection, and increase the light-emitting efficiency of the LED device.

Abstract: A method of manufacturing light-emitting diode device has steps of isolating a light-emitting side of an LED chip from a wire-bonding region by disposing partition panels on the wire-bonding region and coating phosphors on the light-emitting side of the LED chip in a phosphor-coating process. The method can be applied to manufacturing LED device having a flip chip structure or a vertical chip structure. According to the method, a white LED device can be directly manufactured without adopting a phosphor package technique, and thereby a whole package process of the white LED device is simplified.

Abstract: A power limiting circuit for controlling the power of the incandescent lamp not to overrun the rated power limit includes a sampling circuit that consists of two resistors connected in parallel. A control chip compares the received sample voltage with the standard voltage then outputs control signal to drive the conduction of a SCR (silicon controlled rectifier) to change the inner states of contacts of a relay so as to further control the on/off between the input and the output. Based on this control process and technique, this invention prevents the employment of incandescent lamps having a greater power than power rating. Besides, a bi-operational amplifier circuit is used to fulfill the whole examination and control perfectly.