Abstract: A spin injection assisted magnetic recording structure is disclosed wherein a ferromagnetic (FM) layer and at least one spin preservation (SP) layer are formed between a main pole (MP) trailing side and a write shield (WS). Current (Ia) flows between the MP and WS, or is injected into the FM layer. As a result, the spin polarized electrons from the FM layer, which flow across one or two SP layers to generate a magnetization that enhances one or both of a local WS magnetization and return field, and a local MP magnetization and write field, respectively. A lead to the FM layer may be stitched to enable lower resistance and improve reliability. The FM layer may be recessed from the ABS to allow more overlap with the SP layer for lower current density while maintaining performance. Higher linear density and area density capability, and better reliability are achieved.

Abstract: Methods of critical dimension (CD) uniformity control for magnetic head devices are disclosed. In some embodiments, a method can include providing a film stack, the film stack including a substrate, a magnetoresistive (MR) sensor layer, and a hard mask layer, patterning the hard mask layer using a first mask that defines critical shape patterns other than the CD, forming a mandrel pattern using a second mask that defines the CD, and forming a sidewall spacer pattern on sidewalls of the mandrel pattern, and removing the mandrel pattern.

Abstract: A PMR (perpendicular magnetic recording) write head includes a main write pole (MP) that is surrounded by magnetic shields, including laterally disposed side shields (SS), a trailing shield (TS) and a leading shield (LS). The leading shield includes a leading-edge taper (LET) that conformally abuts a tapered side of the write pole. The leading-edge shield and the leading-edge taper can be independently recessed in a proximal direction away from an air bearing surface (ABS) plane so that one or the other of them is recessed and the other remains coplanar with the ABS, or both are recessed by independent amounts. In another configuration the LS is not planar but has a recessed portion in a center track region and two surrounding regions that are coplanar with the ABS plane.

Abstract: The present embodiments relate to a thermally-assisted magnetic recording (TAMR) head. A magnetic assist current can be applied to the TAMR head to assist in reducing timing jitter as the TAMR head interacts with a magnetic recording material. The TAMR head can include a main write pole including a tip portion and configured to direct a magnetic field for interacting with a magnetic recording medium. The TAMR head can include a laser diode to heat the magnetic recording medium and a dynamic fly height (DFH) heating element for dynamically controlling a height of the main write pole. The heating element can be of a parallel bias circuit that directs a direct current (DC) bias current flow along an electrical path from the magnetic yoke element to the tip portion of the main write pole adjacent to an air bearing surface (ABS).

Abstract: A perpendicular magnetic tunnel junction is disclosed wherein a metal insertion (MIS) layer is formed within a free layer (FL), a partially oxidized Hk enhancing layer is on the FL, and a nitride capping layer having a buffer layer/nitride layer (NL) is on the Hk enhancing layer to provide an improved coercivity (Hc)/switching current (Jc) ratio for spintronic applications. Magnetoresistive ratio is maintained above 100%, resistance×area (RA) product is below 5 ohm/?m2, and thermal stability to 400° C. is realized. The FL comprises two or more sub-layers, and the MIS layer may be formed within at least one sub-layer or between sub-layers. The buffer layer is used to prevent oxygen diffusion to the NL, and nitrogen diffusion from the NL to the FL. FL thickness is from 11 Angstroms to 25 Angstroms while MIS layer thickness is preferably from 0.5 Angstroms to 4 Angstroms.

Abstract: A magnetic recording writer is disclosed. In some embodiments, the writer includes a main pole having a front portion and a back portion, a gap layer surround the main pole at the ABS, and a shield structure. The front portion includes a pole tip at an ABS plane, a pole tip thickness in a down-track direction, and curved sidewalls on each side of a center plane that is orthogonal to the ABS and bisects the main pole. The back portion includes first flared sidewalls extending from the curved sidewalls at an angle between 0 and 25 degrees relative to planes parallel to the center plane. The shield structure includes sidewalls having a sidewall portion facing the main pole and formed substantially conformal to the curved sidewalls up to a height of about 30-200 nm where the sidewall portions no longer follow the shape of the main pole.

Abstract: A plurality of conductive via connections are fabricated on a substrate located at positions where MTJ devices are to be fabricated, wherein a width of each of the conductive via connections is smaller than or equivalent to a width of the MTJ devices. The conductive via connections are surrounded with a dielectric layer having a height sufficient to ensure that at the end of a main MTJ etch, an etch front remains in the dielectric layer surrounding the conductive via connections. Thereafter, a MTJ film stack is deposited on the plurality of conductive via connections surrounded by the dielectric layer. The MTJ film stack is etched using an ion beam etch process (IBE), etching through the MTJ film stack and into the dielectric layer surrounding the conductive via connections to form the MTJ devices wherein by etching into the dielectric layer, re-deposition on sidewalls of the MTJ devices is insulating.

Abstract: A read head is disclosed wherein a Spin Hall Effect (SHE) layer is formed on a free layer (FL) in a sensor and between the FL and top shield (S2). Preferably, the sensor has a seed layer, an AP2 reference layer, antiferromagnetic coupling layer, AP1 reference layer, and a tunnel barrier sequentially formed on a bottom shield (S1). In a three terminal configuration, a first current flows between S1 and S2 such that the AP1 reference layer produces a first spin torque on the FL, and a second current flows across the SHE layer thereby generating a second spin torque on the FL that opposes the first spin torque. When the stripe heights of the FL and SHE layer are equal, a two terminal configuration is employed where a current flows between one side of the SHE layer to a center portion thereof and then to S1, or vice versa.

Abstract: A STRAMR structure is disclosed. The STRAMR structure can include a spin torque oscillator (STO) device in a WG provided between the mail pole (MP) trailing side and a trailing shield. The STO device, includes: a flux guiding layer that has a negative spin polarization (nFGL) with a magnetization pointing substantially parallel to the WG field without the current bias and formed between a first spin polarization preserving layer (ppL1) and a second spin polarization preserving layer (ppL2); a positive spin polarization (pSP) layer that adjoins the TS bottom surface; a non-spin polarization preserving layer (pxL) contacting the MP trailing side; a first negative spin injection layer (nSIL1) between the ppL2 and a third spin polarization preserving layer (ppL3); and a second negative spin injection layer (nSIL2) between the ppL3 and the pxL, wherein the nFGL, nSIL1, and nSIL2 have a spin polarization that is negative.

Abstract: A method of forming a spin transfer torque reversal assisted magnetic recording (STRAMR) writer is disclosed wherein a spin torque oscillator (STO) has a flux guiding layer (FGL) wherein magnetization flips to a direction substantially opposing the write gap (WG) field when sufficient current (IB) density is applied across the STO between a trailing shield and main pole (MP) thereby enhancing the MP write field. The FGL has a center portion with a larger magnetization saturation×thickness (MsT) than in FGL outer portions proximate to STO sidewalls. Accordingly, lower IB density is necessary to provide a given amount of FGL magnetization flipping and there is reduced write bubble fringing compared with writers having a FGL with uniform MsT. Lower MsT is achieved by partially oxidizing FGL outer portions. In some embodiments, there is a gradient in outer FGL portions where MsT increases with increasing distance from FGL sidewalls.

Abstract: A read head includes a permanent magnet (PM) layer formed up to 100 nm behind a free layer where PM layer magnetization may be initialized in a direction that adjusts free layer (FL) bias point, and shifts sensor asymmetry (Asym) closer to 0% for individual heads at slider or Head Gimbal Assembly level to provide a significant improvement in device yield. Asym is adjusted using different initialization schemes and initialization directions. With individual heads, initialization direction is selected based on a prior measurement of asymmetry. The PM layer is CoPt or CoCrPt and has coercivity from 500 Oersted to 1000 Oersted. The PM layer may have a width equal to the FL, or a width equal to the cross-track distance between outer sides of the longitudinal bias layers. In another embodiment, the PM layer adjoins a backside of the top shield.

Abstract: A PMR (perpendicular magnetic recording) write head configured for microwave assisted magnetic recording (MAMR) in the form of spin assisted writing (SAW) or spin torque oscillation (STO) includes a spin-torque oscillator (STO) or SAW device and trailing shield formed of high moment magnetic material (HMTS). By patterning the STO or SAW and the HMTS in a simultaneous process the HMTS and the STO or SAW layers are precisely aligned and have very similar cross-track widths. In addition, the write gap at an off-center location has a thickness that is independent from its center-track thickness and the write gap total width can have a flexible range whose minimum value is the same width as the STO or SAW width.

Abstract: A PMR (perpendicular magnetic recording) write head configured for thermally assisted magnetic recording (TAMR) and microwave assisted magnetic recording (MAMR) is made adaptive to writing at different frequencies by inserting thin layers of magnetic material into the material filling the side gaps (SG) between the magnetic pole (MP) and the side shields (SS). At high frequencies, the thin magnetic layers saturate and lower the magnetic potential of the bulky side shields.

Abstract: The invention describes a family of sensors for assaying macro-molecules and/or biological cells in solution. The invention also describes methods of making and using the sensors. Each sensor has the form of a well (a hollow cylinder having a floor but no lid) or a trench whose walls comprise a plurality of GMR or TMR devices. Suitably shaped magnets located below each well's floor pull labeled particles into the well/trench and up against the inner wall where a field gradient orients them for optimum detection. Any unattached labels that happen to also be in the well/trench are removed through suitably sized holes in the floor.

Abstract: A plasmon generator (PG) is formed between a waveguide and main pole, and has a front portion (Au/Rh bilayer) wherein the upper Rh layer has a peg shape at an air bearing surface (ABS), and a tapered backside that is separated from a PG back portion by a dielectric spacer. The lower Au layer has a front side recessed from the ABS and curved sides self-aligned with the Rh layer sides. A key feature is that the back section of lower Au layer curved side forms a smaller angle with a plane aligned orthogonal to the ABS than a front section thereof thereby selectively enabling a deformation of the back end of the Au layer during a heat treatment to >300° C. at the wafer level. Accordingly, the front end of the lower Au layer is densified and provides an improved heat sink to improve reliability and area density capability (ADC).

Abstract: A PMR (perpendicular magnetic recording) write head includes a main write pole (MP) that is surrounded by magnetic shields, including laterally disposed side shields (SS), a trailing shield (TS) and a leading shield (LS). The leading shield includes a leading-edge taper (LET) that conformally abuts a tapered side of the write pole. The leading-edge shield and the leading-edge taper can be independently recessed in a proximal direction away from an air bearing surface (ABS) plane so that one or the other of them is recessed and the other remains coplanar with the ABS, or both are recessed by independent amounts. In another configuration the LS is not planar but has a recessed portion in a center track region and two surrounding regions that are coplanar with the ABS plane.

Abstract: A spin transfer torque reversal assisted magnetic recording (STRAMR) writer is disclosed wherein a spin torque oscillator has a flux guiding layer (FGL) wherein magnetization flips to a direction substantially opposing the write gap (WG) field when sufficient current (IB) density is applied across the STO between a trailing shield and main pole (MP) thereby enhancing the MP write field. A key feature is that the FGL has a center portion with a larger magnetization saturation×thickness (MsT) than in FGL outer portions proximate to STO sidewalls. Accordingly, lower IB density is necessary to provide a given amount of FGL magnetization flipping and there is reduced write bubble fringing compared with writers having a FGL with uniform MsT. Lower MsT is achieved by partially oxidizing FGL outer portions. In some embodiments, there is a gradient in outer FGL portions where MsT increases with increasing distance from FGL sidewalls.

Abstract: A PMR, TAMR or MAMR (Perpendicular Magnetic Recording, Thermally Assisted Magnetic Recording or Microwave Assisted Magnetic Recording) slider-mounted read/write head produces less heat during operation by using magnetic read shields in which are embedded a patterned layer of thermally absorbing material. At least one shield includes a heating coil which is used to adjust the fly-height of the slider by creating a thermal protrusion at the slider ABS. When additional sources of energy, such as laser heating, microwave heating or the write coil itself, are applied to the recording medium, the shields can overheat, adversely affecting their performance. The patterned layer of heat absorbing material reduces the flow of heat from the thermal heating coil to the air bearing surface (ABS) thus cooling the region around the write head while not adversely affecting the shape of the thermal protrusion.

Abstract: A complementary metal oxide semiconductor (CMOS) device comprises a first metal line, a first metal via on the first metal line, a magnetic tunneling junction (MTJ) device on the first metal via wherein the first metal via acts as a bottom electrode for the MTJ device, a second metal via on the MTJ device, and a second metal line on the second metal via.

Abstract: A perpendicular magnetic tunnel junction is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to provide thermal stability to 400° C. Insertion of an oxidation control layer (OCL) such as Mg and a magnetic moment tuning layer (MMTL) like Mo or W enables FL thickness to be reduced below 10 Angstroms while providing sufficient PMA for a switching voltage substantially less than 500 mV at a 10 ns pulse width and 1 ppm defect rate. Magnetoresistive ratio is ?1, and resistance×area (RA) product is below 5 ohm-?m2. Embodiments are provided where MMTL and OCL materials interface with each other, or do not contact each other. Each of the MMTL and OCL materials may be deposited separately, or at least one is co-deposited with the FL.