Patents Assigned to HEFEI MICRO NANO SENSING TECHNOLOGY CO., LTD.
  • Patent number: 10914700
    Abstract: A single cantilever gas sensor includes a silicon substrate, a supporting film, a heating resistor, a isolation film, and a detecting electrode, which are successively stacked. The gas sensor is T-shaped and has a base structure and a cantilever structure The end portion of the cantilever structure is provided with a gas sensitive material. The present invention further provides a sensor array composed of the single cantilever gas sensors and a method for manufacturing the gas sensor. The method includes (1) selecting a silicon substrate; (2) preparing a supporting film; (3) preparing a heating resistor; (4) preparing an isolation film; (5) preparing a detecting electrode; (6) releasing a membrane; (7) loading a gas sensitive material.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: February 9, 2021
    Assignee: HEFEI MICRO NANO SENSING TECHNOLOGY CO., LTD.
    Inventors: Lei Xu, Dongcheng Xie, Shufeng Peng
  • Publication number: 20200333277
    Abstract: A single cantilever gas sensor includes a silicon substrate, a supporting film, a heating resistor, a isolation film, and a detecting electrode, which are successively stacked. The gas sensor is T-shaped and has a base structure and a cantilever structure The end portion of the cantilever structure is provided with a gas sensitive material. The present invention further provides a sensor array composed of the single cantilever gas sensors and a method for manufacturing the gas sensor. The method includes (1) selecting a silicon substrate; (2) preparing a supporting film; (3) preparing a heating resistor; (4) preparing an isolation film; (5) preparing a detecting electrode; (6) releasing a membrane; (7) loading a gas sensitive material.
    Type: Application
    Filed: December 12, 2018
    Publication date: October 22, 2020
    Applicant: HEFEI MICRO NANO SENSING TECHNOLOGY CO., LTD.
    Inventors: Lei XU, Dongcheng XIE, Shufeng PENG
  • Patent number: 10801981
    Abstract: A gas sensor includes a silicon substrate, a detecting electrode, a first isolation film, a heating resistor, and a second isolation film that are successively stacked. The gas sensor has a base structure and a cantilever structure with a curled free end, and a gas sensitive material is provided on the end of the cantilever structure. A sensor array composed of the gas sensor, and a method for manufacturing the gas sensor are also provided. The method includes (1) selecting a sacrificial layer; (2) preparing a detecting electrode; (3) preparing a first isolation film; (4) preparing a heating resistor; (5) preparing a second isolation film; (6) releasing the membrane; and (7) loading the gas sensitive material.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: October 13, 2020
    Assignee: HEFEI MICRO NANO SENSING TECHNOLOGY CO., LTD.
    Inventors: Lei Xu, Shufeng Peng, Dongcheng Xie, Ruiying Zhou
  • Publication number: 20200225180
    Abstract: A gas sensor includes a silicon substrate, a detecting electrode, a first isolation film, a heating resistor, and a second isolation film that are successively stacked. The gas sensor has a base structure and a cantilever structure with a curled free end, and a gassensitive material is provided on the end of the cantilever structure. A sensor array composed of the gas sensor, and a method for manufacturing the gas sensor are also provided. The method includes (1) selecting a sacrificial layer; (2) preparing a detecting electrode; (3) preparing a first isolation film; (4) preparing a heating resistor; (5) preparing a second isolation film; (6) releasing the membrane; and (7) loading the gas sensitive material.
    Type: Application
    Filed: December 12, 2018
    Publication date: July 16, 2020
    Applicant: HEFEI MICRO NANO SENSING TECHNOLOGY CO., LTD.
    Inventors: Lei XU, Shufeng PENG, Dongcheng XIE, Ruiying ZHOU