Patents Assigned to Heilongjiang University
  • Method of manufacturing a nanostructure quick-switch memristor
    Patent number: 8609459
    Abstract: A nanostructure quick-switch memristor includes an upper electrode, a lower electrode and three layers of nanomembrane provided between the upper electrode and the lower electrode. The three layers of nanomembrane consist of an N-type semiconductor layer, a neutral semiconductor layer on the N-type semiconductor layer, and a P-type semiconductor layer on the neutral semiconductor layer. The nanostructure quick-switch memristor of the present invention has the quick switching speed, simple manufacturing method, and low manufacturing cost.
    Type: Grant
    Filed: June 13, 2013
    Date of Patent: December 17, 2013
    Assignee: Heilongjiang University
    Inventors: Dianzhong Wen, Xiaohui Bai
  • Nanostructure quick-switch memristor and method of manufacturing the same
    Patent number: 8487294
    Abstract: A nanostructure quick-switch memristor includes an upper electrode, a lower electrode and three layers of nanomembrane provided between the upper electrode and the lower electrode. The three layers of nanomembrane consist of an N-type semiconductor layer, a neutral semiconductor layer on the N-type semiconductor layer, and a P-type semiconductor layer on the neutral semiconductor layer. The nanostructure quick-switch memristor of the present invention has the quick switching speed, simple manufacturing method, and low manufacturing cost.
    Type: Grant
    Filed: June 30, 2010
    Date of Patent: July 16, 2013
    Assignee: Heilongjiang University
    Inventors: Dianzhong Wen, Xiaohui Bai