Abstract: Presented is a sensor system for the detection of thermal radiation, with a substrate (15) and several sensor elements (10) on the substrate (15), in which case at least one self-test device (53) is provided in order to generate heat which can be used for the heating of one or more sensor elements (10). The sensor elements (10) can be heated according to a typical time pattern during the self-testing process. Also presented is an advantageous process for the manufacture of the sensor system as well as an advantageous configuration of the total system, including signal processing.
Type:
Grant
Filed:
August 13, 1998
Date of Patent:
September 25, 2001
Assignees:
Heimann Optoelectronics GmbH, Robert Bosch GmbH
Inventors:
Jörg Schieferdecker, Marion Simon, Karlheinz Storck, Manfred Rothley, Erich Zabler, Rolf Jähne
Abstract: A circuit for detecting electromagnetic radiation such as infrared radiation includes one or more sensor elements which convert the electromagnetic radiation into an electric signal. A field effect transistor receives the electric signal of the sensor elements. An impedance which is ohmic, inductive, or both is connected between the supply voltage and the field effect transistor to filter high frequencies so that false detections by the detecting circuit are eliminated.
Abstract: The present invention concerns a sensor module with a hollow mirror (3) at whose focal point a sensor element (4) has been arranged whose output signal is compared with a reference signal and is transformed into a temperature signal in an evaluation circuit (15). The sensor module has a thermopile (6) in whose immediate vicinity a temperature reference element (5) has been arranged; a first pre-amplifier (8, 9), that is capable of being calibrated, amplifies the output signal from the thermopile (6); a second pre-amplifier (10-13) amplifies the output signal from the temperature reference element (5); and a third pre-amplifier (14) is connected into the circuit in the form of a difference amplifier and forms the difference in signal between the outputs from the first pre-amplifier (8, 9) and the second pre-amplifier (10-13).
Abstract: A microvacuum sensor has an expanded sensitivity range, wherein a thin membrane having poor thermal conductivity is freely suspended on a semiconductor single-crystal. A thin metallic heating layer, preferably of aluminum, is arranged on the membrane. The membrane surface is suspended by at least one web of the membrane material. The heating layer has an extremely low emissivity of less than 0.1 in the near infrared range. A film resistor having the same temperature coefficient as the metallic heating layer is arranged on the sensor chip in the region of the solid silicon for temperature compensation of temperature fluctuations. Members having a planar mirrored wall are arranged parallel to the surfaces of the membrane at a spacing of less than 5 .mu.m from the membrane. These members act as a heat sink relative to the membrane. Gas from the environment of the sensor can freely circulate between the membrane and the wall surfaces.
Abstract: A position transmitter for acquiring the position of a light beam has at least one group of photodiodes arranged neighboring one another and fashioned strip-shaped such that at least two, typically 5-10, strip-shaped electrodes of a photodiode structure are at least partially covered by the light beam or particle beam whose position is to be acquired. An evaluation circuit measures the photocurrent or a correlated quantity of the individual strip electrodes and indicates the position of the beam on the basis of the distribution of the strengths of the photo currents.
Type:
Grant
Filed:
September 26, 1994
Date of Patent:
August 22, 1995
Assignee:
Heimann Optoelectronics GmbH
Inventors:
Wolfgang Hennerici, Gerhard Brunst, Enno Holzenkaempfer