Abstract: A HOM attenuated high frequency resonator provided with a cylindrical resonator cavity on the outer surface of which are arranged three circular tapered waveguides with two symmetrically arranged ridges each, the cut-off frequency of the waveguide base mode being kept constant over the length of the waveguides by varying the height of the ridges, and the ridge waveguides being provided at their end of the smaller diameter with an impedance transformer each for the broadband adjustment of the coaxial line is to be cost-efficiently manufacturable as a compact structure and is to be of improved attenuation properties while at the same time having, relative to prior art arrangements, a high shunt impedance for the fundamental modes.

Abstract: A thin-film solar module contacted on one side includes a support layer, a photoactive absorber layer and at least one dopant layer deposited over a surface area of at least one side of the absorber layer so as to form a thin-film packet that is divided into thin-film solar cell areas by insulating separating trenches. The thin-film solar module includes first and second contact systems. The first contact system includes contacts connected by an outer contact layer. The second contact system consists of an inner contact layer covering a side of the solar cell areas that face away from the support layer so as to separately discharge excess charge carriers generated by incident light in the absorber layer. The second contact system includes structures that surround and electrically insulate the contacts, which extend through the inner contact layer from the outer contact layer.

Abstract: An atmospheric pressure chemical vapor deposition method for producing an N-type semiconductive metal sulfide thin film on a heated substrate includes converting an indium-containing precursor to at least one of a liquid phase and a gaseous phase. The indium-containing precursor is mixed with an inert carrier gas stream and hydrogen sulfide in a mixing zone so as to form a mixed precursor. A substrate is heated to a temperature in a range of 100° C. to 275° C. and the mixed precursor is directed onto the substrate. The hydrogen sulfide is supplied at a rate so as to obtain an absolute concentration of hydrogen sulfide in the mixing zone of no more than 1% by volume. The In-concentration of the indium containing precursor is selected so as to produce a compact indium sulfide film.

Abstract: A method of producing, at atmospheric pressure, an n-type semiconductive indium sulfide thin film on a substrate using an indium-containing precursor, hydrogen sulfide as a reactive gaseous precursor, and an inert carrier gas stream includes cyclically repeating first and second steps so as to produce an indium sulfide thin film of a desired thickness. The first method phase includes converting the indium-containing precursor to at least one of a dissolved and a gaseous phase, heating the substrate to a temperature in a range of 100° C. to 275° C., directing the indium containing precursor onto the substrate and supplying hydrogen sulfide to the indium-containing precursor in a mixing zone in an amount so as to provide an absolute concentration of hydrogen sulfide that is greater than zero and no greater than 1% by volume. The indium concentration of the indium-containing precursor is set so as to produce a compact In(OHx,Xy,Sz)3 film, where X=halide and x+y+2z=1 with z?0.

Abstract: A photovoltaic solar cell (SZ) of improved light-to-current conversion properties is provided with nano emitters (NE) of acicular or rib-like form and are separated from each other at a uniform distance D??{square root over (2)}L and penetrating to a penetration depth T ? d HL - L 2 + w into the semiconductor layer (HL).

Abstract: A system and method for in situ determination of a material composition of optically thin layers deposited from a vapor phase onto a substrate includes irradiating the substrate with incoherent light of at least three different wavelengths, optically detecting in a spatially resolved manner a reflection intensity of a diffuse or a direct light scattering emanating from a deposited layer outside of a total reflection, concurrently providing numerical values of the detected reflection intensity to an optical layer model based on general line transmission theory, ascertaining values for the optical layer parameters of the deposited layer from the optical layer model for the at least three different wavelengths by numerically adapting the optical layer model to a time characteristic of the detected reflection intensities, and quantitatively determining a material composition of the deposited layer from the ascertained values by comparing the ascertained values to standard values.

Abstract: A method for producing quantum dots embedded in a matrix on a substrate includes the steps of: depositing a precursor on the substrate, the precursor including at least one first metal or a metal compound; contacting the deposited precursor and uncovered areas of the substrate with a gas-phase reagent including at least one second metal and/or a chalcogen; and initiating a chemical reaction between the precursor and the reagent by raising a temperature thereof simultaneously with or subsequent to the contacting so that the matrix consists exclusively of elements of the reagent.

Abstract: Chemical bath deposition (CBD) has proved top be the most favorable method for application of a buffer layer to semiconductor substrates, for example, chalcopyrite thin-film solar cells, whereby previously cadmium sulphide (CdS) was deposited and as cadmium is a highly toxic heavy metal, alternatives have been required. According to the invention, the semiconductor substrate is dipped in a solution for approximately 10 minutes, produced by the dissolution of zinc sulphate (0.05-0.5 mol/l) and thiourea (0.2 to 1.5 mol/l) in distilled water at a temperature being held essentially constant throughout said period. For the first time, the ZnS layer permits comparable or higher efficiencies than conventionally only achieved with toxic cadmium compounds. The method is hence much more environmentally-friendly with the same result.

Abstract: A method of reactive magnetron sputtering for large-area deposition of a chalcopyrite absorber layer for thin-film solar cells on a substrate, using at least one magnetron sputter source with at least one copper target, and using an inert gas and a chalcogen-containing reactive gas in a magnetron plasma, includes introducing the chalcogen-containing reactive gas directly at the substrate. The chalcogen-containing reactive gas fraction is set at 5 to 30% of the inert gas fraction in the magnetron plasma. A sputtering pressure of between 1 and 2 Pa, is set. A negative bias voltage is applied to the substrate. The magnetron plasma is excited by rapid frequency AC voltage above 6 MHz. The substrate is heated to a temperature between 350° C. and 500° C.

Abstract: A field effect transistor in which at least one vertically arranged semiconductor column, with a diameter in the nanometer range, is located between a source and a contact and has an annular surround of a gate contact with retention of an insulation gap. A simplified production method is disclosed and the transistor produced thus is embodied such that the semiconductor columns are embedded in a first and a second insulation layer, between which a metal layer, running to the outside as a gate contact, is arranged, the ends of which, extending upwards through the second insulation layer, are partly converted into an insulator, or removed and replaced by an insulation material.

Abstract: In an embodiment of the present invention, a single-sided contact solar cell includes an absorber layer with plated-through holes; an emitter layer disposed on a first side of the absorber layer, the emitter layer including one or more semiconductor materials having different dopants; a field passivation layer disposed on a second side of the absorber layer; a contact grid covered on a top surface thereof with an insulation layer and electrically connected to a first end of the plated-through holes; and a contact layer. The contact grid and contact layer are disposed together on one side of the absorber layer and insulated with respect to each other and electrically contacted from outside of the solar cell. The contact grid is disposed between the absorber layer and the emitter layer or the field passivation layer, and the contact layer is disposed on the emitter layer or on the field passivation layer so that both the contact grid and contact layer are disposed on a top surface of the solar cell.

Abstract: A transistor assembly with semiconductor material vertically introduced into micro holes (4) in a pliable a film laminate consisting of two plastic films (1, 3) with a metal layer (2) located therebetween. Said semiconductor material is provided with contacts (6, 7) by metalizing the top side and bottom side of the film laminate. The assembly is very strong by virtue of the fact that the film can be bent and stretched.