Abstract: The invention relates to a device for rotating a specimen about two orthogonal axes. According to the invention, the rotation is decoupled, i.e. the axes remain unchanged in their orientation to each other during rotations about the axes. A third rotation about a further axis is then also possible in a decoupled manner. All rotations can also be effected purely mechanically. The device comprises at least one base (18, 18?, 18?) and a socket (1), which is arranged on the base (18, 18?, 18?) rotatable about a first axis, and wherein a first axis T is defined by this first axis. The axis T lies in particular outside the socket (1). Further at least comprising a specimen holder (2), which is arranged rotatably about a second axis A on the socket (1) and wherein the second axis A is oriented perpendicular to the first axis T and wherein a center of a specimen receptacle (4) at one end of the specimen holder (2) coincides with the intersection of the axes A and T.

Abstract: The present invention relates to a slot waveguide formed by a vertical material stack comprising a top layer with a first refractive index, a center layer including a ferroelectric material and with a second refractive index, and a Si1-xGex pseudosubstrate layer with 0<x?1 and with a third refractive index. The center layer is grown on the Si1-xGex pseudosubstrate layer. The second refractive index is lower than the first refractive index and lower than the third refractive index. The slot waveguide can be included in a phase-shifter including two vertically arranged electrodes configured for providing a vertical electrical field (E) extending between the top layer and the bottom layer of the slot waveguide and for providing a complementary-metal-oxide-semiconductor compatible driver voltage. The phase-shifter can be configured for providing a linear electro-optical effect inside the center layer of the slot waveguide.

Abstract: The present invention addresses uniformly formed layers on TCOs with minimized thickness which are hole transporting, due to a hole transport material which is configured for self assembly on the corresponding surface. The layers are formed by a compound made up of at least one kind of molecule according to formula (I) mixed up with a filler molecule FM given by where L is a linking fragment, A an anchor group and HTF is a hole transporting fragment. FM (filler molecule) is at least one kind of molecule consisting of an anchoring group, an alkyl chain of N carbon atoms, with N is in the range of 1 to 18, and a functional group of at least on of the group methyl, halogen, amino, bromide, ammonium and sulfuric functional group and where x is in the range of 0.02 to 1 and y equals (1-x).

Abstract: A device for generating and detecting a magnetization of a sample includes a magnetic field generator configured to generate a static magnetic field of a predetermined direction and strength at a sample location, a transmitter configured to provide an additional magnetic field at the sample location, and a receiver configured to detect a magnetization of the sample. An assembly of at least two LC oscillators, the oscillation frequency of which is a function of a value of an inductive element of the LC oscillators and which are frequency-synchronized via a wiring, and forced by a control voltage to have a same oscillation frequency, is used as the receiver and/or the transmitter. A controller configured to control the assembly is connected, the assembly and the controller are configured to generate a magnetic field capable of deflecting a magnetization of the sample out of equilibrium.

Abstract: A back-contact Si thin-film solar cell includes a crystalline Si absorber layer and an emitter layer arranged on the crystalline Si absorber layer, which include a contact system being arranged on the back so as to collect excess charge carriers generated by the incidence of light in the absorber layer; a barrier layer having a layer thickness in a range of from 50 nm to 1 ?m formed on a glass substrate; at least one coating layer intended for optical coating; and thin layer containing silicon and/or oxygen adjoining the crystalline Si absorber layer arranged on the at least one coating layer for improving the optical characteristics. The crystalline Si absorber layer can be produced by means of liquid-phase crystallization, is n-conducting, and has monocrystalline Si grains. An SiO2 passivation layer is formed between the layer containing silicon and/or oxygen and the Si absorber layer during the liquid-phase crystallization.

Abstract: A method for producing a rear-side contact system for a silicon thin-film solar cell having a pn junction formed from a silicon absorber layer and an emitter layer includes applying an organic insulation layer to the emitter layer; producing contact holes in the insulation layer as far as the absorber layer and the emitter layer; subsequently insulating the contact holes; subsequently applying a low-melting metal layer to form n and p contacts in the contact holes; separating the metal layer into n-contacting and p-contacting regions by laser-cutting; before applying the organic insulation layer to the emitter layer, applying a TCO layer; producing holes for contacts for the silicon absorber layer in the organic insulation; and subsequently selectively doping the produced holes for the contacts as far as the silicon absorber layer.

Abstract: The present invention relates to a method and device for determining the energetic composition of electromagnetic waves. It is the object of the present invention to provide a method and device for X-ray spectroscopy that allows simultaneous detection of the individual energies at a comparatively higher resolution and/or across a comparatively wider energy range. According to the invention, at least one reflective zone plate (12) is used that comprises a multitude of predefined wavelength-selective regions (14) arranged next to one another, wherein the wavelength-selective regions (14) each include a multitude of reflecting arched portions (20), which extend exclusively and continuously across the respective wavelength-selective region (14).

Abstract: A method for the production of a wafer-based, back-contacted heterojunction solar cell includes providing at least one absorber wafer. Metallic contacts are deposited as at least one of point contacts and strip contacts in a predetermined distribution on a back side of the at least one absorber wafer. The contacts have steep flanks that are higher than a cumulative layer thickness of an emitter layer and an emitter contact layer and are sheathed with an insulating sheath. The emitter layer is deposited over an entire surface of the back side of the at least one absorber wafer. The emitter contact layer is deposited over an entire surface of the emitter layer so as to form an emitter contact system. At least one of the emitter layer and the emitter contact layer is selectively removed so as to expose the steep flanks of the contacts that are covered with the insulating sheath.

Abstract: A thin-film solar module contacted on one side includes a support layer, a photoactive absorber layer and at least one dopant layer deposited over a surface area of at least one side of the absorber layer so as to form a thin-film packet that is divided into thin-film solar cell areas by insulating separating trenches. The thin-film solar module includes first and second contact systems. The first contact system includes contacts connected by an outer contact layer. The second contact system consists of an inner contact layer covering a side of the solar cell areas that face away from the support layer so as to separately discharge excess charge carriers generated by incident light in the absorber layer. The second contact system includes structures that surround and electrically insulate the contacts, which extend through the inner contact layer from the outer contact layer.

Abstract: A method for producing periodic crystalline silicon nanostructures of large surface area by: generating a periodic structure having a lattice constant of between 100 nm and 2 ?m on a substrate, the substrate used being a material which is stable at up to at least 570° C., and the structure being produced with periodically repeating shallow and steep areas/flanks, and, subsequently, depositing silicon by directed deposition onto the periodically structured substrate, with a thickness in the range from 0.2 to 3 times the lattice constant, or 40 nm to 6 ?m, at a substrate temperature of up to 400° C., followed by thermally treating the deposited Si layer to effect solid-phase crystallization, at temperatures between 570° C. and 1400° C., over a few minutes up to several days, and optionally subsequently wet-chemically selective etching to remove resultant porous regions of the Si layer.

Abstract: An atmospheric pressure chemical vapor deposition method for producing an N-type semiconductive metal sulfide thin film on a heated substrate includes converting an indium-containing precursor to at least one of a liquid phase and a gaseous phase. The indium-containing precursor is mixed with an inert carrier gas stream and hydrogen sulfide in a mixing zone so as to form a mixed precursor. A substrate is heated to a temperature in a range of 100° C. to 275° C. and the mixed precursor is directed onto the substrate. The hydrogen sulfide is supplied at a rate so as to obtain an absolute concentration of hydrogen sulfide in the mixing zone of no more than 1% by volume. The In-concentration of the indium containing precursor is selected so as to produce a compact indium sulfide film.

Abstract: A method for a powder-metallurgical production of metal foamed material and of parts made of metal foamed material includes mixing a pulverulent metallic material including at least one of a metal and a metal alloy; pressing, under mechanical pressure, the mixed pulverulent metallic material so as to form a dimensionally stable semi-finished product; placing the semi-finished product into a chamber that is configured to be sealed pressure-tight; sealing the chamber; heating the semi-finished product to a melting or solidus temperature of the pulverulent metallic material; once the melting or solidus temperature has been reached, reducing the pressure in the chamber from an initial pressure to a final pressure so that the semi-finished product foams so as to form a metal foam; and lowering the temperature of the metal foam so as to solidify the metal foam.

Abstract: According to the present invention, the catalyst performance of a chelate catalyst comprising a complex of a macrocyclic compound such as a porphyrin derivative is improved. Also, the following method is provided: a method for preparing a fuel cell electrode catalyst comprising a nitrogen-containing metal complex in which a metallic element is coordinated with a macrocyclic organic compound, such method comprising the steps of: adding tin oxalate to the nitrogen-containing metal complex; and baking a mixture of the nitrogen-containing metal complex and tin oxalate in an inert gas atmosphere, wherein elution of metal tin is carried out via acid treatment.

Abstract: A solar cell includes a photoactive, semiconductive absorber layer configured to generate excess charge carriers of opposed polarity by light incident on a front of the absorber layer during operation. The absorber layer is configured to separate and move, via at least one electric field formed in the absorber layer, the photogenerated excess charge carriers of opposed polarity over a minimal effective diffusion length Leff,min. The absorber layer has a thickness Lx of 0<Lx?Leff,min. First contact elements are configured to remove the excess charge carriers of a first polarity on a rear of the absorber layer. Second contact elements are configured remove the excess charge carriers of a second polarity on the rear of the absorber layer. At least one undoped, electrically insulating second passivation region is disposed in an alternating, neighboring arrangement with a first passivation region on the rear of the absorber layer.

Abstract: A method for in situ determination of a material composition of optically thin layers deposited from a vapor phase onto a substrate includes irradiating the substrate with incoherent light of at least three different wavelengths, optically detecting in a spatially resolved manner a reflection intensity of a diffuse or a direct light scattering emanating from a deposited layer outside of a total reflection, concurrently providing numerical values of the detected reflection intensity to an optical layer model based on general line transmission theory, ascertaining values for the optical layer parameters of the deposited layer from the optical layer model for the at least three different wavelengths by numerically adapting the optical layer model to a time characteristic of the detected reflection intensities, and quantitatively determining a material composition of the deposited layer from the ascertained values by comparing the ascertained values to standard values.

Abstract: A method for producing quantum dots embedded in a matrix on a substrate includes the steps of: depositing a precursor on the substrate, the precursor including at least one first metal or a metal compound; contacting the deposited precursor and uncovered areas of the substrate with a gas-phase reagent including at least one second metal and/or a chalcogen; and initiating a chemical reaction between the precursor and the reagent by raising a temperature thereof simultaneously with or subsequent to the contacting so that the matrix consists exclusively of elements of the reagent.

Abstract: For making ceramic or oxidic layers (CL/OL) on substrates (S), the method according to the invention therefore provides that following application (I) and drying (II) of a suitable precursor (P) the formed precursor layer (PLD) is gassed (III) with a moist reactant gas (RG) for conversion into a corresponding hydroxide or complex layer (HL) and then thermally treated (IV) for forming a ceramic or oxidic layer (CL/OL). For the alternative production of other chalcogenidic layers of increased material conversion additional gassing is carried out with a reactant gas containing chalcogen hydrogen. Metallic layers may alternatively be made by use of a reducing reactant gas. The methods in accordance with the invention may be used wherever surfaces, even those of shaded structures, must be protected or modified or provided with functional layers, particularly in solar and materials technology.

Abstract: A solar cell includes a photoactive, semiconductive absorber layer configured to generate excess charge carriers of opposed polarity by light incident on a front of the absorber layer during operation. The absorber layer is configured to separate and move, via at least one electric field formed in the absorber layer, the photogenerated excess charge carriers of opposed polarity over a minimal effective diffusion length Leff,min. The absorber layer has a thickness Lx of 0<Lx?Leff,min. First contact elements are configured to remove the excess charge carriers of a first polarity on a rear of the absorber layer. Second contact elements are configured remove the excess charge carriers of a second polarity on the rear of the absorber layer. At least one undoped, electrically insulating second passivation region is disposed in an alternating, neighboring arrangement with a first passivation region on the rear of the absorber layer.

Abstract: A method of producing, at atmospheric pressure, an n-type semiconductive indium sulfide thin film on a substrate using an indium-containing precursor, hydrogen sulfide as a reactive gaseous precursor, and an inert carrier gas stream includes cyclically repeating first and second steps so as to produce an indium sulfide thin film of a desired thickness. The first method phase includes converting the indium-containing precursor to at least one of a dissolved and a gaseous phase, heating the substrate to a temperature in a range of 100° C. to 275° C., directing the indium containing precursor onto the substrate and supplying hydrogen sulfide to the indium-containing precursor in a mixing zone in an amount so as to provide an absolute concentration of hydrogen sulfide that is greater than zero and no greater than 1% by volume. The indium concentration of the indium-containing precursor is set so as to produce a compact In(OHx,Xy,Sz)3 film, where X=halide and x+y+2z=1 with z?0.

Abstract: A method for the production of a wafer-based, back-contacted heterojunction solar cell includes providing at least one absorber wafer. Metallic contacts are deposited as at least one of point contacts and strip contacts in a predetermined distribution on a back side of the at least one absorber wafer. The contacts have steep flanks that are higher than a cumulative layer thickness of an emitter layer and an emitter contact layer and are sheathed with an insulating sheath. The emitter layer is deposited over an entire surface of the back side of the at least one absorber wafer. The emitter contact layer is deposited over an entire surface of the emitter layer so as to form an emitter contact system. At least one of the emitter layer and the emitter contact layer is selectively removed so as to expose the steep flanks of the contacts that are covered with the insulating sheath.