Patents Assigned to Hemlock Semiconductor
  • Treatment of vent gas to remove hydrogen chloride
    Patent number: 5401872
    Abstract: A process for recovering chlorine present in a gaseous vent stream. The process comprises contacting a gaseous vent gas comprising hydrogen chloride and a hydrosilane with a chlorination catalyst to form a more chlorinated silane. The chlorination of the hydrosilane captures the chlorine of the hydrogen chloride as a substituent of the resulting chlorosilane and provides for a readily condensable chlorosilane.
    Type: Grant
    Filed: March 7, 1994
    Date of Patent: March 28, 1995
    Assignee: Hemlock Semiconductor
    Inventors: Richard A. Burgie, Owen A. Heng, Tod E. Lange