Abstract: A method and apparatus produce silicon-carbon composite materials through a chemical vapor deposition or a thermal disposition process in a fluidized bed reactor on a semi-continuous basis. The produced silicon-carbon composite has a unique structure that silicon particles are uniformly dispersed, bonded and embedded into the carbon conductive matrix and forming a secondary structure. The produced silicon-carbon composite can be used as advanced anode materials for lithium battery and other electrochemical energy storage device.

Abstract: A method of removing surface carbon contamination from polycrystalline silicon comprises providing a polycrystalline silicon feed stream having surface carbon contamination, subjecting the polycrystalline silicon to a high velocity fluid selected from gas, gas/liquid mixtures, gas/solid mixtures and gas/solid/liquid mixtures to form a product stream comprising polycrystalline silicon having surface carbon in an amount of less than 200 parts per billion by weight based on weight of the polycrystalline silicon product and/or a reduction in surface carbon contamination of at least 20%. A system for conducting the method comprises an enclosure, a conveyer for moving a polycrystalline silicon feed stream through the enclosure, at least one stream of a high velocity fluid passing through outlets in the enclosure and directed at the feed stream, an ionizing source in the enclosure or integrated with the at least one stream of high velocity fluid, and an exhaust system for the enclosure.

Abstract: A method of improving polycrystalline silicon growth in a reactor, including: introducing a chlorosilane feed composition comprising trichlorosilane and dichlorosilane into a deposition chamber, wherein the deposition chamber contains a substrate; blending the chlorosilane feed composition with hydrogen gas to form a feed composition; adjusting a baseline flow of chlorosilane and hydrogen gas into the deposition chamber to achieve a pre-determined total flow and a pre-determined chlorosilane feed composition set point; applying pressure to the deposition chamber and energy to the substrate in the deposition chamber to form polycrystalline silicon; measuring the amount of dichlorosilane present in the chlorosilane feed composition and determining an offset value from a target value of dichlorosilane present in the chlorosilane feed composition; adjusting the chlorosilane feed composition set point by an amount inversely proportional to the dichlorosilane offset value; and depositing the formed polycrystalline

Abstract: A polysilicon chip reclamation assembly includes a polysilicon cleaning apparatus configured to clean a plurality of bodies of polysilicon. Also included is a plurality of polysilicon chips generated from the bodies of polysilicon during cleaning thereof, wherein each of the plurality of polysilicon chips has a longest dimensional length ranging from 0.1 mm to 25.0 mm. Further included is a polysilicon apparatus drain line configured to route the plurality of polysilicon chips from the polysilicon cleaning apparatus to a main chip drain line, wherein the main chip drain line is oriented at a downward slope away from the polysilicon apparatus drain line. Yet further included is a fluid source fluidly coupled to the main chip drain line and configured to inject a fluid into the main chip drain line to drive the plurality of polysilicon chips through the main chip drain line.

Abstract: A method of determining a concentration of plastic or other material not dissolved by silicon etchants contaminating a silicon product comprising: obtaining a sample of the silicon product contaminated with the plastic or other material not dissolved by silicon etchants; placing the sample of the silicon product into a ultrasonic bath liquid to produce a slurry comprising the ultrasonic bath liquid, silicon dust, and the plastic or other material not dissolved by silicon etchants; filtering the slurry with a first filter to produce a cake comprising the silicon dust and the plastic or other material not dissolved by silicon etchants separated from the sample of the silicon product; and analyzing the cake to determine the concentration of plastic or other material not dissolved by silicon etchants contaminating the silicon product.

Abstract: A heat exchanger transfers heat between first and second material streams. The heat exchanger includes a body portion including vent channels configured to pass the first material stream through the body portion. The body portion further includes feed channels configured to pass the second material stream through the body portion. The feed channels are spaced from and in thermal communication with the vent channels such that at least one of the first and second material streams transfer heat with another one of the first and second material streams. Each of the feed channels has an inlet having a crosssectional area with the cross-sectional area of the inlet of at least one of the feed channels different than the cross-sectional area of the inlet of another one of the feed channels for normalizing a flow rate of the second material stream through the feed channels.

Abstract: A fluidized bed reactor includes a gas distributor, a tapered section above the gas distributor, and an expanded head above the tapered section. The gas distributor defines a plurality of inlets surrounding a product withdrawal tube, which extends away from the fluidized bed reactor. The fluidized bed reactor is useful in a process for fluidizing relatively large particles, such as Geldart Group B particles and/or Geldart Group D particles, where said particles are in a bubbling fluidized bed residing, in whole or in part, in the tapered section. The fluidized bed reactor and process may be used for manufacturing polycrystalline silicon.

Abstract: A susceptor arrangement for a reactor includes a heater element configured to heat a process gas to be used in the reactor. Also included is an inner susceptor portion located radially inwardly of the heater element and configured to route the process gas therein along a radially inner process gas path. Further included is an outer susceptor portion located radially outwardly of the heater element and configured to route the process gas therein along a radially outer process gas path, wherein the radially inner process gas path and the radially outer process gas path are fluidly coupled and substantially fluidly isolated from the heater element.

Abstract: A fluidized bed reactor includes a gas distributor, a tapered section above the gas distributor, and an expanded head above the tapered section. The gas distributor defines a plurality of inlets surrounding a product withdrawal tube, which extends away from the fluidized bed reactor. The fluidized bed reactor is useful in a process for fluidizing relatively large particles, such as Geldart Group B particles and/or Geldart Group D particles, where said particles are in a bubbling fluidized bed residing, in whole or in part, in the tapered section. The fluidized bed reactor and process may be used for manufacturing polycrystalline silicon.

Abstract: A method of reducing contamination in a silicon product includes: moving silicon pieces along a conveyance system, wherein the conveyance system comprises a liner having a polished surface finish with a surface roughness of less than or equal to 12 microinches; and moving the silicon pieces across the conveyance system, wherein the silicon pieces contain a reduced number of impurities as compared to silicon pieces in contact with a liner having an unpolished surface. A crushing tool includes: crushing tool elements configured to crush silicon into fragments, wherein the crushing tool elements comprise a surface comprising a polished surface finish with a surface roughness of less than or equal to 12 microinches. A conveyance system includes: a first conveyor discharged onto a second conveyor; wherein the first conveyor comprises a first liner and wherein the second conveyor comprises a second liner.

Abstract: A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.

Abstract: A method of forming a heterogeneous protective layer on a surface of a component in a reactor is useful for repair and/or protection. The reactor may be used for production of polycrystalline silicon or a reactant thereof. The heterogeneous protective layer comprises silicon, and may comprise silicon carbide (SiC) and/or silicon nitride (Si3N4). The method comprises providing a polymeric composition for forming the heterogeneous protective layer. The polymeric composition may comprise a polycarbosilane and/or a polysilazane. The method further comprises providing the component. The surface of the component comprises carbon, such as graphite, carbon fiber reinforced carbon, or a combination thereof. The method further comprises applying the polymeric composition on the surface to form a pre-cured coating layer. The method further comprises heating the pre-cured coating layer to form the heterogeneous protective layer.

Abstract: Provided are photoluminescence spectroscopy systems and methods for identifying and quantifying impurities in a semiconductor sample. In some embodiments, the systems and methods comprise a defocused collimated laser beam illuminating a first sample surface, and collection by a collection lens of photoluminescence from a sample edge at the intersection of the first surface with a substantially orthogonal second surface, wherein the first sample surface is oriented from about 0° to 90° with respect to a position parallel to the collection lens.

Abstract: A dome valve selectively dispenses a silicon product from a chamber of a vessel. The dome valve comprises a valve body defining a pass-through channel in communication with the chamber of the vessel to allow the silicon product to exit the vessel. The dome valve also comprising a valve seat defining an opening through which the silicon product enters the pass-through channel. The dome valve further comprising a domed body having a semi-hemispherical configuration. The domed body has a sealing surface. The domed body is rotatable between a closed position and an open position for allowing the selective dispensing of the silicon product from the vessel.

Abstract: A manufacturing apparatus and an electrode for use with the manufacturing apparatus are provided for deposition of a material on a carrier body. Typically, the carrier body has a first end and a second end spaced from each other. A socket is disposed at each end of the carrier body. The manufacturing apparatus includes a housing that defines a chamber. At least one electrode is disposed through the housing with the electrode at least partially disposed within the chamber for coupling to the socket. The electrode has an exterior surface having a contact region that is adapted to contact the socket. An exterior coating is disposed on the exterior surface of the electrode, outside of the contact region. The exterior coating has an electrical conductivity of at least 9×106 Siemens/meter and a corrosion resistance that is higher than silver in a galvanic series that is based upon room temperature sea water as an electrolyte.

Abstract: A dome valve selectively dispenses a silicon product from a chamber of a vessel. The dome valve comprises a valve body defining a pass-through channel in communication with the chamber of the vessel to allow the silicon product to exit the vessel. The dome valve also comprising a valve seat defining an opening through which the silicon product enters the pass-through channel. The dome valve further comprising a domed body having a semi-hemispherical configuration. The domed body has a sealing surface. The domed body is rotatable between a closed position and an open position for allowing the selective dispensing of the silicon product from the vessel.

Abstract: A method of determining an amount of impurities that a contaminating material contributes to high purity silicon including the step of partially encasing a sample of high purity silicon in the contaminating material. The sample encased in the contaminating material is heated within a furnace. A change in impurity content of the high purity silicon is determined after the step of heating, compared to an impurity content of the high purity silicon prior to the step of heating. A furnace for heat treating high purity silicon including a housing that defines a heating chamber. The housing is at least partially formed from low contaminant material that contributes less than 400 parts per trillion of impurities to the high purity silicon during heating at annealing temperatures for a sufficient period time to anneal the high purity silicon, and the furnace contributes an average of less than 400 parts per trillion of impurities to the high purity silicon under the same heating conditions.

Abstract: An electrode composition comprises a silicon powder comprising non-crystalline and crystalline silicon, where the crystalline silicon is present in the silicon powder at a concentration of no more than about 20 wt. %. An electrode for an electrochemical cell comprises an electrochemically active material comprising non-crystalline silicon and crystalline silicon, where the non-crystalline silicon and the crystalline silicon are present prior to cycling of the electrode. A method of controlling the crystallinity of a silicon powder includes heating a reactor to a temperature of no more than 650° C. and flowing a feed gas comprising silane and a carrier gas into the reactor while maintaining an internal reactor pressure of about 2 atm or less. The silane decomposes to form a silicon powder having a controlled crystallinity and comprising non-crystalline silicon.

Abstract: The present invention relates to a manufacturing apparatus for deposition of a material on a carrier body and an electrode for use with the manufacturing apparatus. Typically, the carrier body has a first end and a second end spaced from each other. A socket is disposed at each of the end of the carrier body. The manufacturing apparatus includes a housing that defines a chamber. At least one electrode is disposed through the housing with the electrode at least partially disposed within the chamber for coupling to the socket. The electrode has an exterior surface having a contact region that is adapted to contact the socket. A contact region coating is disposed on the contact region of the exterior surface of the electrode. The contact region coating has an electrical conductivity of at least 9×106 Siemens/meter and a corrosion resistance that is higher than silver in a galvanic series that is based upon room temperature sea water as an electrolyte.

Abstract: A gasket is used in a manufacturing apparatus, which deposits a material on a carrier body. A reaction chamber is defined by a housing and a base plate of the manufacturing apparatus. The gasket is disposed between the housing and the base plate for preventing a deposition composition, which comprises the material to be deposited or a precursor thereof, from escaping the reaction chamber. The gasket comprised a flexible graphite material for preventing the gasket from contaminating the material within said reaction chamber.