Patents Assigned to HEMLOCK SEMICONDUCTOR OPERATIONS LLC
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Patent number: 10851459Abstract: A method of improving polycrystalline silicon growth in a reactor, including: introducing a chlorosilane feed composition comprising trichlorosilane and dichlorosilane into a deposition chamber, wherein the deposition chamber contains a substrate; blending the chlorosilane feed composition with hydrogen gas to form a feed composition; adjusting a baseline flow of chlorosilane and hydrogen gas into the deposition chamber to achieve a pre-determined total flow and a pre-determined chlorosilane feed composition set point; applying pressure to the deposition chamber and energy to the substrate in the deposition chamber to form polycrystalline silicon; measuring the amount of dichlorosilane present in the chlorosilane feed composition and determining an offset value from a target value of dichlorosilane present in the chlorosilane feed composition; adjusting the chlorosilane feed composition set point by an amount inversely proportional to the dichlorosilane offset value; and depositing the formed polycrystallineType: GrantFiled: August 22, 2016Date of Patent: December 1, 2020Assignee: HEMLOCK SEMICONDUCTOR OPERATIONS LLCInventors: John Victor Bucci, Mark Richard Stachowiak, Charles Allan Stibitz
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Patent number: 10345211Abstract: A method of determining a concentration of plastic or other material not dissolved by silicon etchants contaminating a silicon product comprising: obtaining a sample of the silicon product contaminated with the plastic or other material not dissolved by silicon etchants; placing the sample of the silicon product into a ultrasonic bath liquid to produce a slurry comprising the ultrasonic bath liquid, silicon dust, and the plastic or other material not dissolved by silicon etchants; filtering the slurry with a first filter to produce a cake comprising the silicon dust and the plastic or other material not dissolved by silicon etchants separated from the sample of the silicon product; and analyzing the cake to determine the concentration of plastic or other material not dissolved by silicon etchants contaminating the silicon product.Type: GrantFiled: March 28, 2016Date of Patent: July 9, 2019Assignee: HEMLOCK SEMICONDUCTOR OPERATIONS LLCInventors: John W. Hadd, Robert Scott Leser, Jonathon Host
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Patent number: 10266414Abstract: A susceptor arrangement for a reactor includes a heater element configured to heat a process gas to be used in the reactor. Also included is an inner susceptor portion located radially inwardly of the heater element and configured to route the process gas therein along a radially inner process gas path. Further included is an outer susceptor portion located radially outwardly of the heater element and configured to route the process gas therein along a radially outer process gas path, wherein the radially inner process gas path and the radially outer process gas path are fluidly coupled and substantially fluidly isolated from the heater element.Type: GrantFiled: May 12, 2016Date of Patent: April 23, 2019Assignee: HEMLOCK SEMICONDUCTOR OPERATIONS LLCInventor: Michael Matthew Zalar
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Patent number: 10265671Abstract: A fluidized bed reactor includes a gas distributor, a tapered section above the gas distributor, and an expanded head above the tapered section. The gas distributor defines a plurality of inlets surrounding a product withdrawal tube, which extends away from the fluidized bed reactor. The fluidized bed reactor is useful in a process for fluidizing relatively large particles, such as Geldart Group B particles and/or Geldart Group D particles, where said particles are in a bubbling fluidized bed residing, in whole or in part, in the tapered section. The fluidized bed reactor and process may be used for manufacturing polycrystalline silicon.Type: GrantFiled: October 4, 2018Date of Patent: April 23, 2019Assignee: HEMLOCK SEMICONDUCTOR OPERATIONS LLCInventors: John V. Bucci, Raymond Anthony Cocco, Max E. Dehtiar, Patrick J. Harder, S. B. Reddy Karri, Ted M. Knowlton, Michael J. Molnar
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Patent number: 10267574Abstract: A heat exchanger transfers heat between first and second material streams. The heat exchanger includes a body portion including vent channels configured to pass the first material stream through the body portion. The body portion further includes feed channels configured to pass the second material stream through the body portion. The feed channels are spaced from and in thermal communication with the vent channels such that at least one of the first and second material streams transfer heat with another one of the first and second material streams. Each of the feed channels has an inlet having a crosssectional area with the cross-sectional area of the inlet of at least one of the feed channels different than the cross-sectional area of the inlet of another one of the feed channels for normalizing a flow rate of the second material stream through the feed channels.Type: GrantFiled: June 11, 2014Date of Patent: April 23, 2019Assignee: HEMLOCK SEMICONDUCTOR OPERATIONS LLCInventors: John C. Oliva, Brad Werner, Michael Zalar
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Patent number: 10105669Abstract: A fluidized bed reactor includes a gas distributor, a tapered section above the gas distributor, and an expanded head above the tapered section. The gas distributor defines a plurality of inlets surrounding a product withdrawal tube, which extends away from the fluidized bed reactor. The fluidized bed reactor is useful in a process for fluidizing relatively large particles, such as Geldart Group B particles and/or Geldart Group D particles, where said particles are in a bubbling fluidized bed residing, in whole or in part, in the tapered section. The fluidized bed reactor and process may be used for manufacturing polycrystalline silicon.Type: GrantFiled: August 26, 2013Date of Patent: October 23, 2018Assignee: HEMLOCK SEMICONDUCTOR OPERATIONS LLCInventors: John V. Bucci, Raymond Anthony Cocco, Max E. Dehtiar, Patrick J. Harder, S. B. Reddy Karri, Ted M. Knowlton, Michael J. Molnar
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Patent number: 10005614Abstract: A method of reducing contamination in a silicon product includes: moving silicon pieces along a conveyance system, wherein the conveyance system comprises a liner having a polished surface finish with a surface roughness of less than or equal to 12 microinches; and moving the silicon pieces across the conveyance system, wherein the silicon pieces contain a reduced number of impurities as compared to silicon pieces in contact with a liner having an unpolished surface. A crushing tool includes: crushing tool elements configured to crush silicon into fragments, wherein the crushing tool elements comprise a surface comprising a polished surface finish with a surface roughness of less than or equal to 12 microinches. A conveyance system includes: a first conveyor discharged onto a second conveyor; wherein the first conveyor comprises a first liner and wherein the second conveyor comprises a second liner.Type: GrantFiled: February 25, 2016Date of Patent: June 26, 2018Assignee: HEMLOCK SEMICONDUCTOR OPERATIONS LLCInventors: Jonathan Patrick Berrie, John Victor Bucci, James C. Mundell, Traig William Savage
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Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
Patent number: 9909231Abstract: A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.Type: GrantFiled: December 3, 2014Date of Patent: March 6, 2018Assignee: HEMLOCK SEMICONDUCTOR OPERATIONS LLCInventors: Arvid Neil Arvidson, Terence Lee Horstman, Michael John Molnar, Chris Tim Schmidt, Roger Dale Spencer, Jr.