Abstract: A recycled deposition source is ruthenium (Ru) or Ru-based alloy material in the form of a powder material having a size not greater than a 325 mesh size and having an average tap density greater than about 5 gm/cm3. The power material may be non-porous and not agglomerated The recycled deposition source may have less than about 500 ppm of iron and less than about 500 ppm of oxygen. The recycled deposition source may be a recycled Ru or RuCr deposition source, where the recycled Ru or RuCr deposition source has a density comparable to a density of a Ru or RuCr deposition source fabricated from virgin Ru or RuCr powder material, and has a hardness greater than a hardness of a Ru or RuCr deposition source fabricated from virgin Ru or RuCr powder material. The recycled deposition source may be in the form of a sputtering target.

Abstract: A method of recycling ruthenium (Ru) and Ru-based alloys comprises steps of: providing a solid body of Ru or a Ru-based alloy; segmenting the body to form a particulate material; removing contaminants, including Fe, from the particulate material; reducing the sizes of the particulate material to form a powder material; removing contaminants, including Fe, from the powder material; reducing oxygen content of the powder material to below a predetermined level to form a purified powder material; and removing particles greater than a predetermined size from the purified powder material. The purified powder material may be utilized for forming deposition sources, e.g., sputtering targets.

Abstract: A method of forming a layer of an electrically conductive metal-silicide material, comprises steps of: providing a Si-containing workpiece; forming a Ni-doped Co layer on a surface of the workpiece, as by sputter deposition utilizing a Ni-doped Co sputtering target; and reacting the Ni-doped Co layer and workpiece. Embodiments include performing a salicide process to form electrically conductive Ni-doped Co silicide functioning as electrically conductive contacts to the gate electrode and source and drain regions of a MOS transistor. Also disclosed are PVD sources, e.g., sputtering targets, comprising Ni-doped Co and utilized for forming the Ni-doped Co layer.

Abstract: A method of manufacturing a magnetic recording medium, including the step of reactively or non-reactively sputtering at least a first data storing thin film layer over a substrate from a sputter target. The sputter target is comprised of cobalt (Co), platinum (Pt), a first metal oxide further comprised of a first metal and oxygen (O) and, when non-reactively sputtering, a second metal oxide. The first data storing thin film layer is comprised of cobalt (Co), platinum (Pt), and a stoichiometric third metal oxide comprising the first metal and oxygen (O). During sputtering, any non-stoichiometry of the third metal oxide in the first data storing thin film layer is compensated for using oxygen (O) from the second metal oxide in the sputter target, or using oxygen (O) from the oxygen-rich gas atmosphere.

Abstract: A method for manufacturing a single-element matrix cobalt-based granular media alloy composition formulated as Cof1-(MuOv)f2, M representing a base metal selected from the group consisting of magnesium (Mg), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), nickel (Ni), copper (Cu), zinc (Zn), aluminum (Al), silicon (Si), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), indium (In), lanthanum (La), hafnium (Hf), tantalum (Ta), and tungsten (W), u and v representing the number of atoms of base metal M and oxygen (O) per oxide formula, respectively, and f1 and f2 being mole fractions represented by the equation f1+(u+v)f2=1. The method includes the steps of blending a Co-M master alloy powder and a Cou?Ov? powder into a corresponding (CoaM1?a)f1?-(Cou?Ov?)f2? formula, and densifying the blended powders.

Abstract: A method of recycling ruthenium (Ru) and Ru-based alloys comprises steps of: providing a solid body of Ru or a Ru-based alloy; segmenting the body to form a particulate material; removing contaminants, including Fe, from the particulate material; reducing the sizes of the particulate material to form a powder material; removing contaminants, including Fe, from the powder material; reducing oxygen content of the powder material to below a predetermined level to form a purified powder material; and removing particles greater than a predetermined size from the purified powder material. The purified powder material may be utilized for forming deposition sources, e.g., sputtering targets.

Abstract: A method of making a homogeneous granulated metal-based powder, comprises steps of: providing preselected amounts of at least one metal element or metal alloy, at least one ceramic compound, and/or at least one non-metallic element; forming a homogeneous slurry/suspension or wet mixture comprising the preselected amounts of metal element(s) and/or metal alloys, ceramic compound(s), and/or non-metallic element(s), a liquid phase comprising at least one liquid, and at least one binder material; drying the slurry/suspension or mixture to remove at least a portion of the liquid phase and form a powder mixture comprising partially or completely dried granules; and subjecting the granules to a thermal de-binder process for effecting: additional removal of any remaining liquid phase, if necessary; removal of the at least one binder material; reduction of carbon content; reduction of oxygen on the surfaces or interior of the metal or metal alloy phases in the granules; and optional partial sintering for strengthening

Abstract: A method for manufacturing a single-element matrix cobalt-based granular media alloy composition formulated as Cof1-(MuOv)f2, M representing a base metal selected from the group consisting of magnesium (Mg), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), nickel (Ni), copper (Cu), zinc (Zn), aluminum (Al), silicon (Si), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), indium (In), lanthanum (La), hafnium (Hf), tantalum (Ta), and tungsten (W), u and v representing the number of atoms of base metal M and oxygen (O) per oxide formula, respectively, and f1 and f2 being mole fractions represented by the equation f1+(u+v)f2=1. The method includes the steps of blending a Co-M master alloy powder and a Cou?Ov? powder into a corresponding (CoaM1?a)f1?-(Cou?Ov?)f2? formula, and densifying the blended powders.

Abstract: A method of making a NiPt alloy having an ultra-high purity of at least about 4N5 and suitable for use as a sputtering target, comprises steps of: heating predetermined amounts of lesser purity Ni and Pt at an elevated temperature in a crucible to form a NiPt alloy melt, the crucible being composed of a material which is inert to the melt at the elevated temperature; and transferring the melt to a mold having a cavity with a surface coated with a release agent which does not contaminate the melt with impurity elements. The resultant NiPt alloy has a very low concentration of impurity elements and is subjected to cross-directional hot rolling for reducing thickness and grain size.

Abstract: A method of fabricating a sputtering target assembly comprises steps of mixing/blending selected amounts of powders of at least one noble or near-noble Group VIII metal at least one Group IVB, VB, or VIB refractory metal; forming the mixed/blended powder into a green compact having increased density; forming a full density compact from the green compact; cutting a target plate slice from the full density compact; diffusion bonding a backing plate to a surface of the target plate slice to form a target/backing plate assembly; and machining the target/backing plate assembly to a selected final dimension. The disclosed method is particularly useful for fabricating large diameter Ru—Ta alloy targets utilized in semiconductor metallization processing.

Abstract: A magnetic recording medium is provided, comprising a substrate, a hexagonal close-packed seedlayer deposited over the substrate, a hexagonal close-packed underlayer deposited over the seedlayer, and a hexagonal close-packed recording layer deposited over the underlayer. The seedlayer is comprised of a ceramic. A method of manufacturing a magnetic recording medium is also provided, comprising the steps of sputtering a first sputter target to deposit a hexagonal close-packed seedlayer over a substrate, sputtering a second sputter target to deposit a hexagonal close-packed underlayer over the seedlayer, and sputtering a third sputter target to deposit a hexagonal close-packed magnetic recording layer over the underlayer. The seedlayer comprises a ceramic.

Abstract: An inductive device is provided, comprising a conductor configured in a spiral and a first layer of granular magnetic material having a plurality of magnetic grains embedded in an amorphous ceramic matrix. The amorphous ceramic matrix has a dielectric constant greater than 3. A transformer is also provided, comprising a core and a first inductor. The first inductor includes a first conductor configured in a spiral surrounding a first portion of the core, and a first layer of granular magnetic material. The transformer further comprises a second inductor. The second inductor includes a second conductor configured in a spiral surrounding a second portion of the core, and a second layer of granular magnetic material. The first and second layers of granular magnetic material have a plurality of magnetic grains embedded in an amorphous ceramic matrix. The amorphous ceramic matrix has a dielectric constant greater than 3.

Abstract: A method of manufacturing sputtering targets from powder materials, comprising steps of: providing at least one raw powder material; forming the at least one raw powder material into a green body with density greater than about 40 % of theoretical maximum density; treating the green body with microwaves to form a sintered body with density greater than about 97% of theoretical maximum density; and forming a sputtering target from the sintered body. The methodology is especially useful in the fabrication of targets comprising dielectric and cermet materials.

Abstract: A method of forming Heusler or Heusler-like alloys of formula X2YZ or XYZ comprises providing a crucible comprised of at least one metal oxide material thermodynamically stable to molten transition metals; supplying predetermined amounts of constituent elements or master alloy materials of the alloy to the crucible; and melting the constituent elements or master alloy materials under vacuum or a partial pressure of an inert gas to form alloys containing less than about 50 ppm oxygen. Crack-free alloys are formed by casting the alloys in a mold utilizing a multi-stage stress-relieving, heat-assisted casting process. Also disclosed are crack-free Heusler and Heusler-like alloys of formula X2YZ or XYZ containing less than about 50 ppm oxygen and deposition sources, e.g., sputtering targets, fabricated therefrom.

Abstract: A method of making Re and Re-based materials comprises steps of: providing a Re powder starting material or a Re powder starting material and at least one additional powder material; subjecting at least the Re powder to a first degassing treatment for reducing the oxygen content thereof; increasing the density of the degassed Re powder or a mixture of the degassed Re powder and the at least one additional powder material to form a green billet; subjecting the billet to a second degassing treatment to further reduce the oxygen content; and consolidating the billet to form a consolidated material with greater than about 95% of theoretical density and low oxygen content below about 200 ppm for Re and below about 500 ppm for Re-based materials formed from the mixture, excluding oxygen from non-metallic compounds and ceramics. Materials so produced are useful in the manufacture of deposition sources such as sputtering targets.

Abstract: A Re-based alloy material comprises >50 at. % Re and at least one alloying material selected from grain size refinement elements X which have an atomic radius larger or smaller than that of Re and a solid solubility <˜6 at. % in hcp Re at room or higher temperatures, and lattice matching elements Y which have an atomic radius larger or smaller than that of Re and form a solid solution in hcp Re at room or higher temperatures. The alloy material may further comprise at least one material selected from the group consisting of oxides, nitrides, and carbides. Targets comprising the Re-based alloy material are useful in sputter deposition of improved interlayers for obtaining optimally structured granular perpendicular magnetic recording layers.

Abstract: A plasma spray device is provided. The plasma spray device includes a plasma chamber region for having a plasma formed and a throat region coupled to the plasma chamber region. The throat region has an end surface and an axial bore. The axial bore is formed substantially along a longitudinal axis of the throat region, and has a non-circular cross-sectional shape. The axial bore at the end surface is for ejecting a plasma stream. The axial bore may include a plurality of grooves formed substantially along the longitudinal axis of the throat region. The cross-sectional shape of the axial bore may alternatively be defined by a plurality of overlapping substantially circular lobes. The plasma stream has a flow that is lineated before the plasma stream is ejected from the axial bore. The plasma stream has an overall particle pattern angle of less than about 50° after the plasma stream exits the axial bore.

Abstract: A method of forming a cast metal alloy comprises providing a molten ferromagnetic metal alloy; utilizing AC or DC electrical power to generate a pulsed or oscillating magnetic field within the interior space of a casting mold via a magnetic core assembly surrounding the casting mold; filling the casting mold with the molten metal alloy; applying the pulsed or oscillating magnetic field to the molten metal alloy during solidification to mix a molten portion of the solidifying body; and continuing applying the pulsed or oscillating magnetic field to the solidifying body until complete solidification is achieved. The method has particular utility in the formation of cast ferromagnetic alloys for use as high PTF sputtering targets having improved microstructural features.

Abstract: The present invention is directed towards an automated apparatus and method for determining the pass through flux (PTF) of a sputter target by generating a magnetic field on a first side of the sputter target and passing the magnetic field through the sputter target and out a second side of the sputter target, measuring the magnetic field at the second side of the sputter target with a magnetic field detector, and moving one or both the sputter target or the magnetic field detector during the measuring using an automated stand. In various embodiments of the present invention, the automated apparatus and method may generate a map of the sputter target.

Abstract: A magnetic data storage layer includes a high-Ku alloy and an oxide compound of oxygen and either a single element or an alloy. Because of their high Ku, the magnetic domains of this magnetic data storage layer can be made significantly smaller, while maintaining an acceptable thermal stability ratio of about 50 to 70, to provide areal densities of greater than 200 Gb/in2. Sputter targets for sputtering such a magnetic data storage layer are also provided. The sputter targets include the high-Ku alloy and either the desired oxide compounds, or the elements to be oxidized in a reactive sputtering process. The high-Ku alloy has an anisotropy constant of at least 0.5×107 ergs/cm3.