Abstract: A manufacturing process of an electronic device including the following steps is provided: placing a reaction part in a pre-reaction chamber; performing a pre-reaction process on the reaction part placed in the pre-reaction chamber; after performing the pre-reaction, transferring the reaction part from the pre-reaction chamber to a reaction chamber; placing a process device in the reaction chamber with the reaction part placed therein; and performing a reaction process on the process device placed in the reaction chamber.

Abstract: An assembly of a chamber lid and a ceiling is used in a film deposition apparatus for semiconductor processes. The assembly comprises a chamber lid, a ceiling and a retaining mechanism. The chamber lid comprises a recession capable of containing the retaining mechanism. The ceiling comprises a plate and a support ring protruding from the middle of the plate. The retaining mechanism comprises a pair of arms, a pair of connecting members respectively connected to the arms, a pair of linkages respectively forcing the connecting members to move along different directions and a driver driving the linkages to move relative to each other. When the connecting members move toward and get close to each other along different directions, the arms accordingly retain the support ring.

Abstract: A gas injector is used in a film deposition apparatus for semiconductor processes. The gas injector comprises a plurality of gas inlets, a plurality of gas flow channels, and a plurality of gas outlets. The gas inlets introduce several kinds of gases into the gas flow channels. The several kinds of gases are delivered to the gas outlets by the gas flow channels. The cross-sectional area of a portion of at least one of the gas flow channels is gradually changed relative to the gas outlets.

Abstract: A gas injector used for semiconductor equipment includes a housing shell, a rotating main shaft and a gas output distribution unit. The rotating main shaft is covered with the housing shell, and includes a plurality of magnetic fluid seals and a plurality of gas transmission tubes. The gas output distribution unit is coupled to a top end of the rotating main shaft, the gas output distribution unit being connected to a ceiling and a susceptor. The gas output distribution unit includes a plurality of boards spaced at intervals between the ceiling and the susceptor, thereby resulting in a plurality of gas output layers for outputting corresponding reaction gases.

Abstract: A detachable gas injector adaptable to semiconductor equipment includes a top cover, a hollow sleeve, a top housing and a gas output unit. The hollow sleeve receives a convex part of the top cover, thus forming a first transmission passage between the hollow sleeve and the convex part. The top housing has a center hole for accommodating the hollow sleeve, thus forming a second transmission passage between the hollow sleeve and the center hole. The gas output unit is connected to a bottom surface of the hollow sleeve. The gas output unit includes a first partition plate and a second partition plate, which form a first gas output layer, a second gas output layer and a third gas output layer.

Abstract: The present invention is directed to an assembling device used for semiconductor equipment. The assembling device includes a chamber lid, a ceiling, a suspension part, a driving part and receptacles. The ceiling is disposed below the chamber lid. The suspension part is inserted through the chamber lid, and to be hooked to the ceiling. The driving part is disposed above the chamber lid and connected to the suspension part, and configured to drive the suspension part to join or separate the ceiling and the chamber lid. The receptacles are disposed in the ceiling and configured to be correspondingly attached to the suspension part, each of the receptacles defines a rotating groove that is open at top and closed at bottom.

Abstract: The invention provides a gas injector and cover plate assembly comprising a cover plate, a gas injector and a ceiling. The cover plate comprises a plurality of cooling fluid channels. The gas injector is configured to be located on the cover plate comprising a gas distributor, a fluid-cooling gas transmitter, a plurality of gas spraying plates and a conducting cone. The gas distributor distributes a plurality of gases and a gas transmitter cooling fluid. The gas distributor comprises a gas conduit for introducing a first gas. The fluid-cooling gas transmitter connects the gas distributor to introduce the gas transmitter cooling fluid to form a plurality of cooling fluid walls and the first gas and the gases. The gas spraying plates and the conducting cone are located beneath the fluid-cooling gas transmitter.

Abstract: A vapor deposition system and its wafer and thin-film temperature control method are disclosed. A susceptor carries a plurality of wafer holders with each bearing a wafer. The susceptor makes revolution around a center axle and each wafer holder rotates around its own axis. A carrier gas approaches a first surface of the wafer and is heated to form a thin film to be deposited on the first surface. An isothermal plate is placed at a second surface of the wafer and the second surface is opposite to the first surface. One or more remote temperature-measuring elements measure a temperature of a rear surface of the isothermal plate and the rear surface is opposite to the wafer, and a wafer-side temperature is calculated by the measured rear surface temperature of the isothermal plate.

Abstract: Apparatus and method for curvature and thin film stress measurement are disclosed. The apparatus comprises two light sources and a detector. Two light beams from the two light sources with an angle are not parallel. The two light beams are collimated and projected onto a specimen with a pitch. The detector receives the light beams reflected from the specimen. The curvature of the specimen is calculated via a distance between spots of the light beams on the detector or a size variation of one of the spots.

Abstract: A gas injector and cover plate assembly includes a cover plate, a gas injector and a ceiling. The cover plate includes cooling fluid channels. The gas injector is configured to be located on the cover plate, and includes a gas distributor, a fluid-cooling gas transmitter, gas spraying plates and a conducting cone. The gas distributor distributes gases and a gas transmitter cooling fluid. The gas distributor includes a gas conduit for introducing a first gas. The fluid-cooling gas transmitter connects the gas distributor to introduce the gas transmitter cooling fluid to form cooling fluid walls and the first gas and the gases. The gas spraying plates and the conducting cone are located beneath the fluid-cooling gas transmitter.

Abstract: The invention provides a gas treatment apparatus comprising an exterior circular gas spray portion including an exterior circular gas channel, and at least two regions and a cover. Each region has an upper gas spray portion and a lower gas spray portion. The upper gas spray portion has a plurality of first gas channels and a plurality of first heat exchange fluid conduits, each the first gas channel is arranged interlaced with each the first heat exchange fluid conduit. The lower gas spray portion comprises a plurality of second gas channels and a plurality of second heat exchange fluid conduits, each the second gas channel is arranged interlaced with each the second heat exchange fluid conduit, and each the second gas channel surrounds each the first gas channel. The combinations of the first gas channels and the second gas channels in adjacent regions respectively are arranged at an angle.

Abstract: Semiconductor equipment is disclosed in this invention. The semiconductor equipment includes a reaction chamber, a wafer susceptor, and a liner device. The reaction chamber includes an opening and a circular inner wall. The wafer susceptor is capable of carrying at least one wafer. The liner device is disposed between the wafer susceptor and the circular inner wall of the reaction chamber. The liner device is capable of moving vertically between a first position and a second position. The liner device includes at least one venting opening, wherein the venting opening is connected with a venting device. Particles which are accumulated within the liner device can be removed by the venting device.

Abstract: A showerhead is disclosed in this invention. The showerhead includes a bottom portion, at least one plate, and a top portion. The bottom portion includes a plurality of gas tubes which are integratedly formed on the bottom portion. The gas tubes include at least one first gas tube. The at least one plate includes a first plate. The first plate includes a plurality of first openings, wherein the gas tubes pass through the first openings. The top portion is coupled to the bottom portion for forming at least one inner space.

Abstract: A film-deposition apparatus simultaneously realizes high partial pressure of volatile components, great flow velocity and smooth deposition rate curve at lower gas consumption. The apparatus comprises a disk-like susceptor, a face member opposing the susceptor, an injector, a material gas introduction portion, and a gas exhaust portion. A wafer holder retains a substrate, and a supporting member of the susceptor retains the wafer holder. The susceptor revolves around its central axis and the substrate rotates by itself. The opposing face member is structured so that a fan-shaped recessed portion and a fan-shaped raised portion are formed alternately in a radial manner, by which the height of the flow channel changes in a circumferential direction. The apparatus provides film deposition equivalent to that attained under optimal conditions by a conventional apparatus at a smaller flow rate of the carrier gas, and increases a partial pressure of material gases of volatile components.

Abstract: A gas injector and cover plate assembly includes a cover plate, a gas injector and a ceiling. The cover plate includes cooling fluid channels. The gas injector is configured to be located on the cover plate, and includes a gas distributor, a fluid-cooling gas transmitter, gas spraying plates and a conducting cone. The gas distributor distributes gases and a gas transmitter cooling fluid. The gas distributor includes a gas conduit for introducing a first gas. The fluid-cooling gas transmitter connects the gas distributor to introduce the gas transmitter cooling fluid to form cooling fluid walls and the first gas and the gases. The gas spraying plates and the conducting cone are located beneath the fluid-cooling gas transmitter.

Abstract: Semiconductor equipment is provided to include a reaction chamber, a movable frame, and at least one cleaning brush head. The cleaning brush head is configured to operate on at least one dirty portion to be cleaned within the reaction chamber. The movable frame is disposed within the reaction chamber. The movable frame is capable of carrying a susceptor. The cleaning brush head is capable of touching the dirty portion. The cleaning brush head is capable of moving relative to the dirty portion for removing the residue which is attached to the portion to be cleaned.

Abstract: The invention provides a gas treatment apparatus comprising an exterior circular gas spray portion including an exterior circular gas channel, and at least two regions and a cover. Each region has an upper gas spray portion and a lower gas spray portion. The upper gas spray portion has a plurality of first gas channels and a plurality of first heat exchange fluid conduits, each the first gas channel is arranged interlaced with each the first heat exchange fluid conduit. The lower gas spray portion comprises a plurality of second gas channels and a plurality of second heat exchange fluid conduits, each the second gas channel is arranged interlaced with each the second heat exchange fluid conduit, and each the second gas channel surrounds each the first gas channel. The combinations of the first gas channels and the second gas channels in adjacent regions respectively are arranged at an angle.

Abstract: The invention provides a gas treatment apparatus comprising an exterior circular gas spray portion, an upper gas spray portion, a lower gas spray portion and a cover on the exterior circular gas spray portion and the upper gas spray portion. The upper gas spray portion has a plurality of first gas channels and a plurality of first heat exchange fluid conduits, each the first gas channel is arranged interlaced with each the first heat exchange fluid conduit. The lower gas spray portion comprises a plurality of second gas channels and a plurality of second heat exchange fluid conduits, wherein the second plenum is located under the first heat exchange fluid conduits and above the second heat exchange fluid conduits, each the second gas channel is arranged interlaced with each the second heat exchange fluid conduit, and each the second gas channel surrounds each the first gas channel.

Abstract: Semiconductor equipment is provided to include a reaction chamber, a movable frame, and at least one cleaning brush head. The cleaning brush head is configured to operate on at least one dirty portion to be cleaned within the reaction chamber. The movable frame is disposed within the reaction chamber. The movable frame is capable of carrying a susceptor. The cleaning brush head is capable of touching the dirty portion. The cleaning brush head is capable of moving relative to the dirty portion for removing the residue which is attached to the portion to be cleaned.

Abstract: The invention provides a gas distribution apparatus comprising a main frame and a cover. The main frame includes a plurality of walls having a plurality of second gas channels therein, a plurality of first plenums defined by the walls, a plurality of heat exchange channels, a plurality of first gas channels under the first plenums, a plurality of heat exchange channel covers on the heat exchange channel, and a plurality of first plenum covers on the first plenums. Each first plenum and two adjacent walls defining the first plenum form a trunk with a plurality of branches extending from the trunk, and the branches of adjacent trunks are arranged in an interlaced manner. Each heat exchange channel is between two adjacent trunks. The cover on the main frame encloses a second plenum thereon.