Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1−xN(x>0.69) connected by electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W2C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature sensors, pressure sensors, chemical sensors, and high temperature and high power electronic circuits.

Abstract: Single crystal SiC at least 200 micrometers thick is employed to detect electromagnetic radiation having a wavelength less than about 10 micrometers via an acoustic absorption mechanism. Applications include IR radiation sensing, contactless temperature sensing and an IR controlled varistor.

Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1−xN(x>0.69) connected by electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W2C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature sensors, pressure sensors, chemical sensors, and high temperature and high power electronic circuits.

Abstract: SiC, preferably in single crystal form, is employed as an IR radiation sensor with high temperature and power capabilities. Applications include sensing the power or energy from an IR radiation source, a contactless temperature sensor for another body heated by IR radiation, and an IR controlled varistor.