Abstract: A thermoelectric module having a gapless insulating eggcrate providing insulated spaces for a large number of p-type and n-type thermoelectric elements. The absence of gaps in the walls of the spaces virtually eliminates the possibility of interwall shorts between the elements. Electrical connections on both the hot and cold sides of the module electrically connect the elements in series or in parallel as desired. Usually, most or all of the elements will be connected in series. In a preferred embodiment, the gapless eggcrate is formed from a high temperature plastic. In a preferred embodiment, two lead wires are added before adding the hot and cold side electrical connections. In this embodiment, electrical connections on the hot and cold sides comprise a thin layer of molybdenum and a coating of aluminum over the molybdenum. The surfaces are ground down to expose the insulating eggcrate walls except where connections between the elements are desired.

Abstract: A thermoelectric element having a very large number of alternating layers of semiconductor material. The alternating layers all have the same crystalline structure. The inventors have demonstrated that materials produced in accordance with this invention provide figures of merit more than six times that of prior art thermoelectric materials. A preferred embodiment is a superlattice of Si, as a barrier material, and SiGe, as a conducting material, both of which have the same cubic structure. Another preferred embodiment is a superlattice of B--C alloys, the layers of which would be different stoichiometric forms of B--C but in all cases the crystalline structure would be alpha 0. In a preferred embodiment the layers are grown under conditions as to cause them to be strained at their operating temperature range in order to improve the thermoelectric properties.