Abstract: A time-resolved photoemission electron microscopy including: a laser light source that outputs a pulse having less than or equal to a femtosecond level pulse width and variable repetition frequency; a pump light pulse generator configured to generate pump light pulse that excites photo-carriers of a sample by converting wavelength of light output from the laser light source; and a probe light pulse generator configured to generate probe light pulse that photo-emits photo-carriers excited by the pump light pulse from the sample by photoelectric effect by converting wavelength of light output from the laser light source. The energy of at least one of the pump light pulse and the probe light pulse is configured to continuously vary in a range not less than 0.1 eV and not more than 8 eV.

Abstract: Provided are a cell for X-ray analysis and an X-ray analysis apparatus that enable simultaneous X-ray diffraction and X-ray absorption fine structure measurements of a material (sample) in the same field of view on the sample (same position on the sample). The cell for X-ray analysis of the present invention enables simultaneous X-ray diffraction and X-ray absorption fine structure measurements of a sample in the same field of view on the sample and includes a furnace including a space where the sample is held and a focused heater heating the sample, a first window provided to the furnace and through which X-rays directed at the sample is incident, a second window provided to the furnace and from which X-rays emerging from the sample exit, a third window provided to the furnace, and a holder that positions the sample in the space.

Abstract: Provided are: a non-evaporable getter coated component and chamber including a non-evaporable getter material layer with a total storage capacity of carbon atoms, nitrogen atoms and oxygen atoms of 20 mol % or less and/or a noble metal layer with a total storage capacity of carbon atoms, nitrogen atoms and oxygen atoms of 20 mol % or less; a manufacturing method of a non-evaporable getter coated component and chamber, the method including a step of forming a non-evaporable getter material layer and/or a noble metal layer by coating a non-evaporable getter material and/or a noble metal by a vapor deposition method under low pressure; and a manufacturing apparatus of a NEG coated component and chamber including a NEG material filament and/or a noble metal filament and a current feedthrough.

Abstract: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.

Abstract: A time-resolved photoemission electron microscopy including: a laser light source that outputs a pulse having less than or equal to a femtosecond level pulse width and variable repetition frequency; a pump light pulse generator configured to generate pump light pulse that excites photo-carriers of a sample by converting wavelength of light output from the laser light source; and a probe light pulse generator configured to generate probe light pulse that photo-emits photo-carriers excited by the pump light pulse from the sample by photoelectric effect by converting wavelength of light output from the laser light source. The energy of at least one of the pump light pulse and the probe light pulse is configured to continuously vary in a range not less than 0.1 eV and not more than 8 eV.

Abstract: Provided are a cell for X-ray analysis and an X-ray analysis apparatus that enable simultaneous X-ray diffraction and X-ray absorption fine structure measurements of a material (sample) in the same field of view on the sample (same position on the sample). The cell for X-ray analysis of the present invention enables simultaneous X-ray diffraction and X-ray absorption fine structure measurements of a sample in the same field of view on the sample and includes a furnace including a space where the sample is held and a focused heater heating the sample, a first window provided to the furnace and through which X-rays directed at the sample is incident, a second window provided to the furnace and from which X-rays emerging from the sample exit, a third window provided to the furnace, and a holder that positions the sample in the space.

Abstract: The present invention provides a radiation-damage-compensation-circuit and a SOI-MOSFET that has high radiation resistance. The SOI-MOSFET has the radiation-damage-compensation-circuit to recover the characteristics of the SOI-MOSFET after X-ray irradiation.

Abstract: A radio wave measurement device enabling highly sensitive measurements of radio waves at an extremely low temperature is disclosed. The radio wave measurement device has a radiation-blocking filter through which a targeted radio wave is transmitted, a radio wave-transparent material to reflect a non-targeted electromagnetic wave included in radio waves, and a radio wave detector which are placed in a vacuum vessel, in which the radio waves are transmitted through the radiation-blocking filter, the non-targeted electromagnetic wave included in the radio waves is reflected toward the radiation-blocking filter by the radio wave-transparent material and collected as heat into the radiation-blocking filter, and the heat is exhausted out of the system, allowing the radio waves transmitted through the radio wave-transparent material to be measured with high sensitivity by the radio wave detector.

Abstract: The present invention separates radiation from an object by a polarization filter 3 into polarized light beams, causes one of the beams to enter a spectrum analyzer 7 through a first optical path, causes the other to enter the spectrum analyzer 7 through a second optical path, and measures the two-color ratio, while causes radiation of a blackbody 2 placed in a vacuum ultralow temperature thermostatic chamber 1 in a quasi-thermal equilibrium state at an ultralow temperature in vacuo to enter the polarization filter 3 through a third optical path, separates the radiation into polarized light beams, causes the beams to each enter the same optical paths as the respective optical paths for the radiation of the object, causes the beams to enter the spectrum analyzer 7, measures the two-color ratio, and accurately obtains the temperature of the object on the basis of these two two-color ratios.

Abstract: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.

Abstract: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.

Abstract: A magnetic measurement system includes an X-ray source, a monochromator that converts right- and left-polarization X-ray into right- and left-monochromatic X-ray, an aperture slit that allows the right- and left-monochromatic X-ray to pass through, an analytical section, and piezoelectric scanning devices. The analytical section has a Fresnel zone plate that receives and focuses the right- and left-monochromatic X-ray on a single point being 10 nm or less wide of a magnetic sample, an order-sorting aperture that allows the focused X-ray to selectively pass through, a sample-stage that sets a comparatively thick magnetic sample that is more than 150 nm thick and less than or equal to 1000 nm thick to be irradiated with the X-ray, and an X-ray-detector that detects transmittance of transmission X-ray passing through the comparatively thick sample and that generates X-ray magnetic circular dichroism (XMCD) data by directly measuring the detected transmittance of the transmission X-ray.

Abstract: The optical resonator as intends to generate coherent X-ray by irradiation of polarized laser interference fringes with electron beam has been unknown. The present invention provides an optical resonator that is capable of preparing polarization laser, polarization X-ray and coherent X-ray. The optical resonator is characterized by comprising an optical resonator that is capable of circulating two or more polarization lasers and irradiation of the polarization lasers with electron beam introduced by an electron beam feed port which is inserted in the intersection of laser paths inside the optical resonator.

Abstract: A method, system and apparatus are provided to measure magnetic characteristics of a comparatively thick magnetic sample in a magnetic field or nonmagnetic field by X-ray magnetic circular dichroism (XMCD). In particular, the method, system and apparatus measure the magnetic characteristics of the thick magnetic sample by irradiating the sample with X-ray, and detecting transmissive X-ray passing through the sample.

Abstract: The present invention provides a burst-laser generator using an optical resonator which produces high pulse-strength of burst-laser in order to conduct laser Compton scattering, comprising: a self-oscillation amplifying optical loop-path and an external optical resonator to burst-amplify laser, wherein, laser supplied by an exciting laser source is self-oscillation amplified with the self-oscillation amplifying optical loop-path and further burst-amplified with the external optical resonator.

Abstract: It is an object of the present invention to provide a method and an apparatus for measuring a scattering intensity distribution capable of measuring a scattering intensity distribution in a reciprocal space in a short time.

Abstract: A system and an apparatus are provided to measure magnetic characteristic of crystal grains composing magnetic polycrystalline materials in the magnetic field or nonmagnetic field by X-ray magnetic circular dichroism (XMCD). In particular, the system and the apparatus measure the magnetic characteristic of comparatively very thick materials.

Abstract: Problem There is proposed an innovative cross-sectional structure, with an idea contrary to the conventional one, utilizing the non-reactivity between Cu and Ta (or between Ag and Nb, Ta) in a high-temperature short-time heat treatment, thus achieving (1) the suppression of the low magnetic-field instability, (2) excellent wire drawability of a precursor wire, and (3) the reduction of the cost required for the incorporation of a stabilizer. Means for Resolution There is proposed a structure having an assembly of a plurality of single wires, wherein the assembly is covered with an outer cover (skin) formed from Nb or Ta, wherein each of the single wires has an Nb/Al composite filament region which is formed from a composite of Nb and Al mixed in an Nb:Al molar ratio of 3:1, and which is covered with a partition formed from Nb or Ta, and further covered with an interfilamentary barrier formed from Cu or Ag disposed around the partition.

Abstract: Targeting mass production, the present invention provides an advanced method of manufacturing pure niobium plate end-group components from pure niobium plate material for superconducting high frequency accelerator cavity by means of innovative shear-blanking followed by innovative forging procedures, wherein the invention is to convert the procedure/production method from the conventional machining or waterjet cutting followed by the conventional cold forging to the whole press-forming The invention gives the drastic effects on cost-effectiveness and press-performance.

Abstract: It has been very difficult to accumulate strong laser in the conventional optical resonator, because firstly it has been very difficult to control a resonator length less than 1 ? in resonation position which is required for the laser amplification more than 1,000 times and secondly, the conventional method has utilized laser strength of amplified laser in the optical resonator as the resonance control signal. The present invention provides an optical resonator system to accumulate strong laser. In the system, unamplified modulation wave or harmonic which are derived from oscillation laser are selectively used to tune a resonator length of the optical resonator.