Patents Assigned to High Temperature Engineering Corporation
  • Patent number: 4857689
    Abstract: A semiconductor wafer processing furnace includes an elongated processing chamber enclosing a first zone and a second zone extending along a first reference axis, and a wafer support assembly having a support member and associated translation elements for selectively translating the support member between the zones, along the first reference axis, in response to an applied position signal. Temperature elements control the first and second zones to have selected first and second temperatures, respectively. A controller applies the position signal to the translation elements, in response to an applied control signal representative of a desired temperature of the region surrounding the support member. Responsive to the position signal, the translation elements position the support member along the reference axis such that the temperature of the region surrounding the support member substantially matches the desired temperature.
    Type: Grant
    Filed: March 23, 1988
    Date of Patent: August 15, 1989
    Assignee: High Temperature Engineering Corporation
    Inventor: Chunghsin Lee