Abstract: A system for separation of gas and solid at least comprises a cyclone trapping device and a negative pressure waste gas treatment device. The cyclone trapping device has a gas inlet and outlet chamber and a cyclone separation chamber communicating with each other, and the gas inlet and outlet chamber has a gas inlet tube communicating with a process waste gas source and a gas outlet tube communicating with the negative pressure waste gas treatment device. A process waste gas generated by the process waste gas source is introduced into the gas inlet and outlet chamber through the gas inlet tube to generate cyclones, thereby separating a portion of solid particles from the process waste gas, and transmitting the process waste gas to the negative pressure waste gas treatment device through the gas outlet tube in order to further separate the remaining solid particles from the process waste gas.

Abstract: A fast annealing equipment is applicable to the annealing treatment of silicon carbide wafers. The fast annealing equipment comprises a variable frequency microwave power source system, a resonant chamber heating system and a measurement and control system. The variable frequency microwave power source system uses a solid state power amplifier and has the flexibility of fast frequency sweep during heat treatment to compensate for resonant frequency changes due to load effect caused by temperature changes in a material to be annealed. In order to improve an energy efficiency and provide a sufficient microwave energy uniform area, the TM010 resonant chamber structure can be used to anneal 4-inch to 8-inch silicon carbide wafers. The measurement and control system combines software and hardware to form an automatic system with instant feedback to provide further flexibility, stability and reliability for the entire equipment.

Abstract: A self-cleaning negative-pressure ejector at least comprises a suction chamber, a jet pipe and a flushing member. A side wall of the suction chamber has at least one suction port for communicating with a first fluid pipeline. An exit port of the jet pipe is disposed in the suction chamber and ejects a second fluid so that a negative pressure is generated in the suction chamber, a first fluid in the first fluid pipeline enters the suction chamber, and a first included angle is between a direction in which the first fluid being sucked into the suction chamber and an ejection direction of the second fluid. The flushing member optionally provides a third fluid to flush the suction chamber and/or the first fluid pipeline.

Abstract: Disclosed is an anti-deposition object for use in a vacuum environment with a main structure and a fluorine coating layer, the fluorine coating layer covers at least one surface of the main structure, the anti-deposition object contacts with a manufacturing process substance used or discharged during a manufacturing process performed by a manufacturing process equipment in the vacuum environment, the fluorine coating layer has a water droplet contact angle with the manufacturing process substance higher than that of the surface of the main structure, the fluorine coating layer has a hardness similar to or higher than that of the surface of the main structure, and the fluorine coating layer has a roughness lower than that of the surface of the main structure.

Abstract: Disclosed is an anti-deposition object with a main structure and a fluorine coating layer, the fluorine coating layer covers at least one surface of the main structure, the anti-deposition object contacts with a substance in an environment, the fluorine coating layer has a water droplet contact angle with the substance higher than that of the surface of the main structure, the fluorine coating layer has a hardness similar to or higher than that of the surface of the main structure, and the fluorine coating layer has a roughness lower than that of the surface of the main structure.

Abstract: Disclosed are a laser-treated anti-deposition object with a main structure and a fluorine coating layer and a manufacturing method of the same. The fluorine coating layer covers a laser-treated surface of the main structure to form an anti-deposition surface, an initial surface of the main structure is subjected to a laser surface treatment step by a laser to become the laser-treated surface with a plurality of microstructures. The anti-deposition object contacts with a manufacturing process substance used or discharged during a manufacturing process performed by a manufacturing process equipment in a vacuum environment, and the anti-deposition surface of the object has a relatively high contact angle.

Abstract: Disclosed is a wafer processing system comprising a processing tank, a cleaning device and a drying device. The processing tank has a cantilever rotating device and a dynamic balance correction device. The cantilever rotating device has a holding part for holding a wafer of a variety of specification parameters and causing the wafer to rotate along a rotating shaft of the cantilever rotating device. The dynamic balance correction device performs a corresponding dynamic balance correction on the cantilever rotating device, so that the cantilever rotating device is in a dynamic balance state during rotation. A dynamic nozzle unit of the cleaning device ejects a cleaning fluid to clean the rotating wafer. The drying device is used to dry the rotating wafer.

Abstract: Disclosed is a wafer processing system comprising a processing tank, a cleaning device and a drying device. The processing tank has a cantilever rotating device and a dynamic balance correction device. The cantilever rotating device has a holding part for holding a wafer of a variety of specification parameters and causing the wafer to rotate along a rotating shaft of the cantilever rotating device. The dynamic balance correction device performs a corresponding dynamic balance correction on the cantilever rotating device, so that the cantilever rotating device is in a dynamic balance state during rotation. A dynamic nozzle unit of the cleaning device ejects a cleaning fluid to clean the rotating wafer. The drying device is used to dry the rotating wafer.

Abstract: Disclosed are a semiconductor waste gas treatment system and a moisture-gas separator of the same. A moisture-gas separator is communicated between a wet scrubber and an air extraction device in the semiconductor waste gas treatment system. An air inlet pipe, a separation pipe and an exhaust pipe are communicated with one another in the moisture-gas separator. A diversion inclined partition is disposed obliquely in the separation pipe and a filter material layer filled in the separation pipe of the moisture-gas separator. The wet scrubber washes a process waste gas from a process waste gas source and discharges a scrubbed waste gas. The air extraction device provides a suction force so that the scrubbed waste gas first enters the separation pipe through the air inlet pipe, and is separated into water mist and dust, and then a dry waste gas is discharged through the exhaust pipe.

Abstract: A processing device and a processing method for a solid structure are used to perform a processing procedure on the solid structure. The processing device for the solid structure of the invention provides energy to the solid structure by various electromagnetic radiation sources to cause the solid structure to generate qualitative changes or defects, that is, to form a modified layer. Stress and/or hardness of the modified layer are/is different from that of other non-processed areas.

Abstract: Disclosed is an annealing system integrated with laser and microwave. The annealing system is provided with a microwave system, a laser system, and a measurement and control system. The microwave system provides a microwave energy to a first area of a to-be-annealed object for annealing the first area of the to-be-annealed object. The laser system uses a laser to provide a laser energy to a second area of the to-be-annealed object for annealing the second area of the to-be-annealed object. The measurement and control system monitors and controls a power of a microwave and/or a laser. The annealing system is capable of reducing a time required for an overall annealing, and also capable of avoiding cracks or defects caused by large stress differences.

Abstract: Disclosed is an electrical discharge machining apparatus at least comprising a carrier platform and an electrical discharge machining unit. The carrier platform is used to carry at least one to-be-machined object. The electrical discharge machining unit comprises an electrode, a jig and a power supply unit. When the electrical discharge machining unit performs an electrical discharge machining procedure on a machined target area of the to-be-machined object along a machining direction, an electrical discharge section of the electrode and the machined target area of the to-be-machined object move relatively. The invention is capable of improving a machining procedure, saving an overall machining time and saving a time required for electrode replacement.

Abstract: Disclosed is an electrical discharge machining apparatus at least comprising a carrier platform, an electrical discharge machining unit and a repairing device. The carrier platform is used for carrying at least one to-be-machined object. The electrical discharge machining unit comprises at least one electrode and a power supply unit, and is used for performing an electrical discharge machining procedure on a machined target area of the to-be-machined object by the electrode along a machining direction. When there is an area to be repaired on an appearance of the electrode, the repairing device performs a repairing procedure on the electrode, thereby achieving effects of stable electrical discharge and preventing short-circuit problem in the electrical discharge machining procedure.

Abstract: A fast annealing equipment is applicable to the annealing treatment of silicon carbide wafers. The fast annealing equipment comprises a variable frequency microwave power source system, a resonant chamber heating system and a measurement and control system. The variable frequency microwave power source system uses a solid state power amplifier and has the flexibility of fast frequency sweep during heat treatment to compensate for resonant frequency changes due to load effect caused by temperature changes in a material to be annealed. In order to improve an energy efficiency and provide a sufficient microwave energy uniform area, the TM010 resonant chamber structure can be used to anneal 4-inch to 8-inch silicon carbide wafers. The measurement and control system combines software and hardware to form an automatic system with instant feedback to provide further flexibility, stability and reliability for the entire equipment.

Abstract: A self-cleaning negative-pressure ejector at least comprises a suction chamber, a jet pipe and a flushing member. A side wall of the suction chamber has at least one suction port for communicating with a first fluid pipeline. An exit port of the jet pipe is disposed in the suction chamber and ejects a second fluid so that a negative pressure is generated in the suction chamber, a first fluid in the first fluid pipeline enters the suction chamber, and a first included angle is between a direction in which the first fluid being sucked into the suction chamber and an ejection direction of the second fluid. The flushing member optionally provides a third fluid to flush the suction chamber and/or the first fluid pipeline.

Abstract: A long-effect self-cleaning negative-pressure ejector at least comprises a suction chamber, a jet pipe and a flushing member. A side wall of the suction chamber has at least one suction port for communicating with a first fluid pipeline. An exit port of the jet pipe is disposed in the suction chamber and ejects a second fluid so that a negative pressure is generated in the suction chamber, a first fluid in the first fluid pipeline obliquely enters the suction chamber, and a first included angle is between a direction in which the first fluid being sucked into the suction chamber and an ejection direction of the second fluid. The flushing member optionally provides a third fluid to flush the suction chamber and/or the first fluid pipeline. At least one air jet nozzle is disposed on the first fluid pipeline to inject gas into the first fluid pipeline.

Abstract: A processing device and a processing method for a solid structure are used to perform a processing procedure on the solid structure. The processing device for the solid structure of the invention provides energy to the solid structure by various electromagnetic radiation sources to cause the solid structure to generate qualitative changes or defects, that is, to form a modified layer. Stress and/or hardness of the modified layer are/is different from that of other non-processed areas.

Abstract: Disclosed is an annealing system integrated with laser and microwave. The annealing system is provided with a microwave system, a laser system, and a measurement and control system. The microwave system provides a microwave energy to a first area of a to-be-annealed object for annealing the first area of the to-be-annealed object. The laser system uses a laser to provide a laser energy to a second area of the to-be-annealed object for annealing the second area of the to-be-annealed object. The measurement and control system monitors and controls a power of a microwave and/or a laser. The annealing system is capable of reducing a time required for an overall annealing, and also capable of avoiding cracks or defects caused by large stress differences.

Abstract: A non-contact processing device and a non-contact processing method are used to perform a processing procedure on a solid structure. The non-contact processing device of the invention uses an electromagnetic radiation source to provide energy to the solid structure to cause qualitative changes or defects in the solid structure, that is, to form a modified layer. A separation energy source is used to apply a separation energy on the solid structure with the modified layer in a non-contact manner. With stress, structural strength, lattice pattern or hardness of the modified layer being different from that of other non-processing areas, the solid structure can be rapidly separated or thinned at the modified layer.

Abstract: An electrical discharge machining apparatus and an electrical discharge machining method with adjustable machining parameters comprise a carrier and an electrical discharge machining (EDM) unit. The carrier is used for placing a to-be-machined object defined with a machining target area. A discharge electrode of the electrical discharge machining (EDM) unit is used to cut the machining target area of the to-be-machined object along a first cutting direction with at least one machining parameter, the machining parameter is correspondingly adjusted when a specified parameter of the to-be-machined object changes to a first numerical value, thereby using the adjusted machining parameter to perform a second cutting step on the machining target area of the to-be-machined object. A segmented cutting technology for solving a problem that a cutting speed (mm2/min) is slowed down and a total cutting time is prolonged due to changes of the specified parameter of electrical discharge machining cutting.