Abstract: An optoelectronic device is disclosed. The optoelectronic device comprises a transparent conductive substrate, an optoelectronic element, and a base. The transparent conductive substrate comprises a transparent plate, a transparent electrode film formed on the transparent plate, and an insulating part formed on the transparent plate. The insulating part divides the transparent electrode film into a first transparent electrode film and a second transparent electrode film that non-conduct each other. The optoelectronic element comprising a positive electrode and a negative electrode is disposed on the transparent conductive substrate and electrically connected to the first transparent electrode film and the second transparent electrode film individually. The base is formed with an opening that has a reflective surface on the bottom of the opening, and the optoelectronic element is held in the opening in a manner of suspending from or connecting with the bottom of the opening.

Abstract: A full-color display device is disclosed. The present invention comprises a plurality of pixel units each comprising a base, a plurality of transparent conductive substrates, a plurality of light emitting elements, and a plurality of electrode parts. The base has at least three openings formed thereon, the bottom of each opening is a reflective surface, and each of the transparent conductive substrates individually covers each opening. Each of the light emitting elements is individually disposed on one side of each transparent conductive substrate and held in each opening. Each of the electrode parts is formed on the base and electrically connected to the electrodes of the light emitting elements and the transparent conductive substrates.

Abstract: The present invention discloses a light-emitting device with improved reliability so as to achieve a prolonged lifetime, better stability and excellent illumination quality. The light-emitting device comprises a substrate; a light-emitting component, having a p-n junction, mounted on a top surface of the substrate so as to be connected to corresponding metal pads through at least one conducting wire; and a cap, formed of a transparent material to have an inward concave, wherein the light-emitting component is disposed in the inward concave such that there is a gap between the light-emitting component and the cap.

Abstract: A base of an optoelectronic device is disclosed. The present invention comprises an opening and a reflective surface. The base of the optoelectronic device incorporates with a transparent conductive substrate and an optoelectronic element to construct the optoelectronic device, wherein the optoelectronic element is disposed on the transparent conductive substrate, and the opening is used to hold the optoelectronic element. Moreover, the transparent conductive substrate is placed on the top of the opening, and the reflective surface is located at the bottom in the opening.

Abstract: An optoelectronic unit and a transparent conductive substrate of the same are disclosed. The transparent conductive substrate comprises a transparent plate, a transparent electrode film, an insulation part, and a bounding pad, wherein the transparent electrode film and the insulation part are formed on the transparent plate, the insulation part divides the transparent electrode film into a first transparent electrode film area and a second transparent electrode film area that non-conduct each other, and the bounding pad is formed on the second transparent electrode film area. The optoelectronic unit comprises the aforementioned transparent conductive substrate, an optoelectronic element, and a conductive wire, wherein one electrode of the optoelectronic element is electrically connected to the aforementioned first transparent electrode film area, and the other electrode of the optoelectronic element is electrically connected to the aforementioned bounding pad by the conductive wire.

Abstract: A base of an optoelectronic device is disclosed. The present invention comprises an opening and a reflective surface. The base of the optoelectronic device incorporates with a transparent conductive substrate and an optoelectronic element to construct the optoelectronic device, wherein the optoelectronic element is disposed on the transparent conductive substrate, and the opening is used to hold the optoelectronic element. Moreover, the transparent conductive substrate is placed on the top of the opening, and the reflective surface is located at the bottom in the opening.

Abstract: An optoelectronic unit and a transparent conductive substrate of the same are disclosed. The transparent conductive substrate comprises a transparent plate, a transparent electrode film, an insulation part, and a bounding pad, wherein the transparent electrode film and the insulation part are formed on the transparent plate, the insulation part divides the transparent electrode film into a first transparent electrode film area and a second transparent electrode film area that non-conduct each other, and the bounding pad is formed on the second transparent electrode film area. The optoelectronic unit comprises the aforementioned transparent conductive substrate, an optoelectronic element, and a conductive wire, wherein one electrode of the optoelectronic element is electrically connected to the aforementioned first transparent electrode film area, and the other electrode of the optoelectronic element is electrically connected to the aforementioned bounding pad by the conductive wire.

Abstract: A full-color display device is disclosed. The present invention comprises a plurality of pixel units each comprising a base, a plurality of transparent conductive substrates, a plurality of light emitting elements, and a plurality of electrode parts. The base has at least three openings formed thereon, the bottom of each opening is a reflective surface, and each of the transparent conductive substrates individually covers each opening. Each of the light emitting elements is individually disposed on one side of each transparent conductive substrate and held in each opening. Each of the electrode parts is formed on the base and electrically connected to the electrodes of the light emitting elements and the transparent conductive substrates.

Abstract: An optoelectronic device is disclosed. The optoelectronic device comprises a transparent conductive substrate, an optoelectronic element, and a base. The transparent conductive substrate comprises a transparent plate, a transparent electrode film formed on the transparent plate, and an insulating part formed on the transparent plate. The insulating part divides the transparent electrode film into a first transparent electrode film and a second transparent electrode film that non-conduct each other. The optoelectronic element comprising a positive electrode and a negative electrode is disposed on the transparent conductive substrate and electrically connected to the first transparent electrode film and the second transparent electrode film individually. The base is formed with an opening that has a reflective surface on the bottom of the opening, and the optoelectronic element is held in the opening in a manner of suspending from or connecting with the bottom of the opening.

Abstract: A light emitting semiconductor device with a surface-mounted and flip-chip package structure is disclosed. The light emitting semiconductor device includes an insulating substrate and an LED. The LED includes a substrate, a first-type semiconductor layer, a first electrode formed on part of the first-type semiconductor layer surface, a second-type semiconductor layer formed on the first-type semiconductor layer surface but not covering the first electrode, and a second electrode formed on the second-type semiconductor layer. Two electrode layers are formed on the two sides of the insulating substrate and extend upwardly and downwardly to the upper and lower surface of the insulating substrate. The device is characterized in that the LED is mounted on the insulating substrate by a flip chip method and the insulating substrate is formed with two electrode layers at both side walls to surface-mounted with the LED.

Abstract: A method and structure for forming an electrode on a light emitting device. The present invention provides a transparent electrode or a reflective electrode formed on a p-type gallium nitride-based compound semiconductor. The electrode comprises a plurality of opaque ohmic contact dots formed on the p-type gallium nitride-based compound semiconductor and a transparent conductive layer (or a light reflective conductive layer) covering the p-type gallium nitride-based compound semiconductor. Utilizing the present invention, the electrode is suitable for any light emitting device, and the light efficiency of the light emitting device is higher than that of the conventional light emitting device. Furthermore, the process of forming the electrode is easier than that of the conventional process.

Abstract: A method and structure for forming an electrode on a light emitting device. The present invention provides a transparent electrode or a reflective electrode formed on a p-type gallium nitride-based compound semiconductor. The electrode comprises a plurality of opaque ohmic contact dots formed on the p-type gallium nitride-based compound semiconductor and a transparent conductive layer (or a light reflective conductive layer) covering the p-type gallium nitride-based compound semiconductor. Utilizing the present invention, the electrode is suitable for any light emitting device, and the light efficiency of the light emitting device is higher than that of the conventional light emitting device. Furthermore, the process of forming the electrode is easier than that of the conventional process.

Abstract: A light-emitting diode device, such as a blue, green, blue-green light-emitting diode, with a one-wire-bonding characteristic and the method of manufacturing the same have been disclosed. The light-emitting diode device has a GaN-based semiconductor laminated structure formed on an insulating substrate. The GaN-based semiconductor laminated structure includes an n-type layer on its bottom side, a p-type layer on its top side, and an active layer, for generating light, sandwiched between the n-type and p-type layers. An annular isolation portion such as a trench or a high resistivity portion formed by ion implantation is formed in the GaN-based semiconductor laminated structure to separate the p-type layer into a central p-type layer and a peripheral p-type layer and to separate the active layer into a central active layer and a peripheral active layer. A p-type electrode is formed on the central p-type layer without electrically connecting to the peripheral p-type layer.