Abstract: A Scottky diode arrangement comprises a metallically conducting plate and a semiconductive plate, one or both of which are provided with at least three raised portions which form electrically parallel Schottky contacts between the plates.

Abstract: A field effect transistor comprises two semiconductor plates, discs or chips of the same type of conducitivity each with a structure of parallel ridges on one side, the two plates, discs or chips being assembled together under mechanical pressure with their structured sides facing and relatively rotated so that the ridges of one plate, disc or chips touch and cross the ridges of the other plate, disc or chip and form distribution of electrically parallel connected monocrystalline narrow path resistors, and a gate contact for each narrow path resistor. The invention also includes a method of making such a transistor.

Abstract: A bipolar transistor comprises a pair of monocrystalline semiconductor discs, plates or chips, one n-doped and one p-doped, one of the discs, plates or chips providing the base region and having an oppositely doped emitter region and a base/emitter p-n junction, and both of the discs, plates or chips having a structure of parallel ridges which face, cross and touch when the discs plates or chips are assembled together under mechanical pressure, the surfaces of the side edges of the ridges on the other of the discs being highly doped with the conductivity type of the base region whereby the contact surfaces between the ridges form parallel connected base/collector p-n junctions as a result of plastic deformation of the semiconductor material. The invention also includes a method of making such a bipolar transistor.

Abstract: A thyristor comprises two semiconductor plates, discs or chips, one n-doped and one p-doped, each having a structure of parallel ridges on one major surface and an opposite conducting type layer on the other major surface, two plates, discs or chips being assembled together under pressure with the structured surfaces facing and rotated relative to each other so that the ridges cross and touch to form pn junctions produced by plastic deformation of the crystal lattice and pnpn layer sequences. The invention also includes a method of manufacturing such thyristors.