Patents Assigned to Himax Semiconductor, Inc.
  • Patent number: 9075195
    Abstract: A color filter including a substrate, a plurality of single film filter units and a plurality of multi-film filter units is provided. The substrate has a first region and a second region. The single-film filter units are respectively disposed on the substrate and within the first region. The multi-film filter units are respectively disposed on the substrate and within the second region. When a white beam is projected on the color filter, the single-film filter units and the multi-film filter units reflect a plurality of color beams. The multi-film filter units include a plurality of first multi-film filter units. When the white beam is projected on the first multi-film filter units, the first multi-film filter units reflect a first color beam.
    Type: Grant
    Filed: August 12, 2014
    Date of Patent: July 7, 2015
    Assignee: HIMAX SEMICONDUCTOR, INC.
    Inventors: Shao-Min Hung, Han-Kang Liu, Bo-Nan Chen
  • Patent number: 8912671
    Abstract: A semiconductor device including a substrate and at least one alignment mark disposed on the substrate and having at least one hollow pattern. Therefore, the identification rate of the alignment mark can be high by the hollow pattern.
    Type: Grant
    Filed: May 16, 2013
    Date of Patent: December 16, 2014
    Assignees: Himax Technologies Limited, Himax Semiconductor, Inc.
    Inventors: Po-Yang Tsai, Chan-Liang Wu
  • Publication number: 20140339714
    Abstract: A semiconductor device including a substrate and at least one alignment mark disposed on the substrate and having at least one hollow pattern. Therefore, the identification rate of the alignment mark can be high by the hollow pattern.
    Type: Application
    Filed: May 16, 2013
    Publication date: November 20, 2014
    Applicants: Himax Semiconductor, Inc., HIMAX TECHNOLOGIES LIMITED
    Inventors: Po-Yang Tsai, Chan-Liang Wu
  • Patent number: 8837063
    Abstract: A method for manufacturing a color filter is provided. The method includes following steps. A substrate is provided. A first filter layer is formed on a first part of a first region and a first part of a second region of the substrate. A second filter layer is formed on a second part of the second region. A third filter layer is formed on a second part of the first region and a third part of the second region. When a white beam is projected on the color filter, the first region and the second region reflect a plurality of color beams. A color filter manufactured through the method is also provided.
    Type: Grant
    Filed: September 28, 2010
    Date of Patent: September 16, 2014
    Assignee: Himax Semiconductor, Inc.
    Inventors: Shao-Min Hung, Han-Kang Liu, Bo-Nan Chen
  • Patent number: 8547648
    Abstract: A micro-lens module including a first lens, a second lens, and an aperture stop is provided. The first lens is disposed between an object side and an image side, wherein a first surface of the first lens facing the object side is an aspheric surface, and the curvature radius of the aspheric surface is R1. The second lens is disposed between the first lens and the image side, wherein a second surface of the second lens facing the image side is an aspheric surface, and the curvature radius of the aspheric surface is R2. The aperture stop is disposed between the first lens and the second lens, wherein the distance from the first surface to the aperture stop is d1, and the distance from the second surface to the aperture stop is d2. The micro-lens module satisfies 6>d2/d1>2.5 and ?2.5<R1/R2<1.5.
    Type: Grant
    Filed: September 24, 2010
    Date of Patent: October 1, 2013
    Assignee: Himax Semiconductor, Inc.
    Inventors: Chuan-Hui Yang, Nai-Yuan Tang
  • Patent number: 8514505
    Abstract: A wafer level optical lens substrate including a substrate and at least one lens is provided. The substrate has at least one through hole and at least one flange, wherein each flange is located on a side wall in each through hole. Each lens located in each through hole is embedded with each flange. A method of fabricating a wafer level optical lens substrate and a wafer level optical lens module are also provided respectively.
    Type: Grant
    Filed: May 3, 2011
    Date of Patent: August 20, 2013
    Assignee: Himax Semiconductor, Inc.
    Inventor: Cheng-Heng Chen
  • Patent number: 8486815
    Abstract: A method for fabricating a back-side illumination image sensor includes: implanting a first type of dopant into an epitaxial layer disposed over a first side of a substrate layer to form a first dopant layer in a first side of the epitaxial layer; adhering a carry layer over the first dopant layer for carrying the substrate layer; grinding a second side of the substrate layer for exposing a second side of the epitaxial layer; implanting the first type of dopant into the epitaxial layer from the second side of the epitaxial layer to form a second dopant layer in the second side of the epitaxial layer; forming at least one metal layer over the second dopant layer after forming the second dopant layer in the second side of the epitaxial layer; removing the carry layer; and forming a color filtering module over the first dopant layer.
    Type: Grant
    Filed: May 5, 2011
    Date of Patent: July 16, 2013
    Assignees: Himax Imaging, Inc., Himax Semiconductor, Inc.
    Inventors: Fang-Ming Huang, Tsung-Chieh Chang
  • Patent number: 8444793
    Abstract: The present invention provides a semiconductor device and a fabricating method thereof. The fabricating method comprises: providing a first substrate; forming a soft dry film having an adhesive film and a release film; sticking the soft dry film on the first substrate with the adhesive film; removing the release film; sticking a second substrate on the adhesive film; and heating the adhesive film to solidify the adhesive film to form a solid adhesive film. The semiconductor device comprises: a first substrate, a solid adhesive film, and a second substrate. The solid adhesive film is formed on the first substrate, and the second substrate is formed on the solid adhesive film.
    Type: Grant
    Filed: February 8, 2010
    Date of Patent: May 21, 2013
    Assignees: Himax Semiconductor, Inc., Core Precision Material Co., Ltd.
    Inventors: Hsin-Chang Hsiung, Shu-Lin Ho
  • Patent number: 8361830
    Abstract: An image sensor module having a light gathering region and a light non-gathering region includes an image sensor, a light blocking spacer, a lens layer and a fixing shell. The light blocking spacer is disposed on the image sensor and located in the light non-gathering region. The light blocking spacer has a through hole exposing a portion of the image sensor in the light gathering region. The lens layer is disposed on the light blocking spacer and covers the through hole. The lens layer includes a transparent substrate and a lens disposed on the transparent substrate and located in the light gathering region. The fixing shell located in the light non-gathering region wraps the sidewalls of the image sensor, the light blocking spacer and the lens layer continuously. The material of the fixing shell includes a thermosetting material. A method for manufacturing the image sensor module is also provided.
    Type: Grant
    Filed: April 9, 2010
    Date of Patent: January 29, 2013
    Assignee: Himax Semiconductor, Inc.
    Inventors: Chuan-Hui Yang, Hsin-Chang Hsiung, Yi-Chuan Lo, Han-Yi Kuo
  • Patent number: 8203647
    Abstract: An image sensor module having a light gathering region and a light non-gathering region includes an image sensor, a lens barrel and a lens layer. The lens barrel is disposed on the image sensor and located in the light non-gathering region and has a through hole exposing a portion of the image sensor in the light gathering region. A material of the lens barrel includes a thermoplastic with a melting point higher than soldering temperature. The lens layer is disposed on an end portion of the lens barrel away from the image sensor and covers the through hole. The lens layer includes a glass substrate and a lens disposed on the glass substrate and located in the light gathering region.
    Type: Grant
    Filed: February 11, 2010
    Date of Patent: June 19, 2012
    Assignee: Himax Semiconductor, Inc.
    Inventor: Chuan-Hui Yang
  • Patent number: 8193599
    Abstract: A fabricating method includes adhering an exposed surface of a first solid adhesive film to a first substrate. The second surface of the first solid adhesive film is exposed and adhered to a second substrate. A third substrate is adhered to a second substrate via a patterned second solid adhesive film, and a diaphragm layer is adhered to the third substrate via a patterned third solid adhesive film. A fourth solid adhesive film with a removable release film is adhered to the first substrate covered, followed by slicing to form wafer level lens modules.
    Type: Grant
    Filed: December 23, 2009
    Date of Patent: June 5, 2012
    Assignee: Himax Semiconductor, Inc.
    Inventors: Hsin-Chang Hsiung, Chih-Wei Tan, Po-Lin Su
  • Patent number: 8190013
    Abstract: An optical system including a photo sensor, a wafer level optical (WLO) lens module and a focusing motor is provided. The WLO lens module is located at the photo sensor. The WLO lens module includes at least one transparent substrate and at least one lens, wherein the lens is disposed on the transparent substrate. The focusing motor is located between the WLO lens module and the photo sensor. The focusing motor drives the WLO lens module to move toward or backward the photo sensor.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: May 29, 2012
    Assignee: Himax Semiconductor, Inc.
    Inventor: Cheng-Heng Chen
  • Publication number: 20120075724
    Abstract: A micro-lens module including a first lens, a second lens, and an aperture stop is provided. The first lens is disposed between an object side and an image side, wherein a first surface of the first lens facing the object side is an aspheric surface, and the curvature radius of the aspheric surface is R1. The second lens is disposed between the first lens and the image side, wherein a second surface of the second lens facing the image side is an aspheric surface, and the curvature radius of the aspheric surface is R2. The aperture stop is disposed between the first lens and the second lens, wherein the distance from the first surface to the aperture stop is d1, and the distance from the second surface to the aperture stop is d2. The micro-lens module satisfies 6>d2/d1>2.5 and ?2.5<R1/R2<1.5.
    Type: Application
    Filed: September 24, 2010
    Publication date: March 29, 2012
    Applicant: HIMAX SEMICONDUCTOR, INC.
    Inventors: Chuan-Hui Yang, Nai-Yuan Tang
  • Publication number: 20120075736
    Abstract: A method for manufacturing a color filter is provided. The method includes following steps. A substrate is provided. A first filter layer is formed on a first part of a first region and a first part of a second region of the substrate. A second filter layer is formed on a second part of the second region. A third filter layer is formed on a second part of the first region and a third part of the second region. When a white beam is projected on the color filter, the first region and the second region reflect a plurality of color beams. A color filter manufactured through the method is also provided.
    Type: Application
    Filed: September 28, 2010
    Publication date: March 29, 2012
    Applicant: HIMAX SEMICONDUCTOR, INC.
    Inventors: Shao-Min Hung, Han-Kang Liu, Bo-Nan Chen
  • Publication number: 20110248367
    Abstract: An image sensor module having a light gathering region and a light non-gathering region includes an image sensor, a light blocking spacer, a lens layer and a fixing shell. The light blocking spacer is disposed on the image sensor and located in the light non-gathering region. The light blocking spacer has a through hole exposing a portion of the image sensor in the light gathering region. The lens layer is disposed on the light blocking spacer and covers the through hole. The lens layer includes a transparent substrate and a lens disposed on the transparent substrate and located in the light gathering region. The fixing shell located in the light non-gathering region wraps the sidewalls of the image sensor, the light blocking spacer and the lens layer continuously. The material of the fixing shell includes a thermosetting material. A method for manufacturing the image sensor module is also provided.
    Type: Application
    Filed: April 9, 2010
    Publication date: October 13, 2011
    Applicant: HIMAX SEMICONDUCTOR, INC.
    Inventors: Chuan-Hui Yang, Hsin-Chang Hsiung, Yi-Chuan Lo, Han-Yi Kuo
  • Publication number: 20110222173
    Abstract: A wafer level optical lens substrate including a substrate and at least one lens is provided. The substrate has at least one through hole and at least one flange, wherein each flange is located on a side wall in each through hole. Each lens located in each through hole is embedded with each flange. A method of fabricating a wafer level optical lens substrate and a wafer level optical lens module are also provided respectively.
    Type: Application
    Filed: May 3, 2011
    Publication date: September 15, 2011
    Applicant: HIMAX SEMICONDUCTOR, INC.
    Inventor: Cheng-Heng Chen
  • Patent number: 7974023
    Abstract: A wafer level optical lens substrate including a substrate and at least one lens is provided. The substrate has at least one through hole and at least one flange, wherein each flange is located on a side wall in each through hole. Each lens located in each through hole is embedded with each flange. A method of fabricating a wafer level optical lens substrate and a wafer level optical lens module are also provided respectively.
    Type: Grant
    Filed: March 11, 2010
    Date of Patent: July 5, 2011
    Assignee: Himax Semiconductor, Inc.
    Inventor: Cheng-Heng Chen