Abstract: A surface emission type semiconductor light-emitting device includes a base having a main surface, a current blocking layer formed on the base, and a semiconductor layer formed on the current blocking layer. A circular recess or hole having a side wall which is substantially perpendicular to the main surface is formed in the semiconductor layer as extending therethrough and partly into the base. An impurity is introduced into the semiconductor layer through the side wall and thus there is defined a cylindrical diffusion region around the recess. A p-n junction is defined at an outer boundary of the diffusion region and the p-n junction effectively defines a light-emitting activation region. An additional diffusion region may be formed in the semiconductor layer for narrowing a current path in the semiconductor layer. A second current blocking layer may be formed on top of the semiconductor layer.

Abstract: A semiconductor light emitting device, such as a light emitting diode or laser, includes a substrate which is provided with a hole and a pn junction extending adjacent to and in parallel with the side wall of the hole. Thus, the side wall of the hole extends in a direction perpendicular to a main surface of the substrate. A pair of electrodes is provided such that current flows across the pn junction so that light emitted in a vertical direction which is perpendicular to the main surface of the substrate. The hole may be either a through hole or a bore hole. With the additional provision of a pair of resonators, there is provided a semiconductor laser.