Patents Assigned to Hiroshige Suzuki
  • Patent number: 4517305
    Abstract: Finely divided silicon carbide containing at least 10% by weight of 2H-type silicon carbide is very easily sinterable and can be sintered into a sintered body having a density of at least 85% of the theoretical density by sintering or a hot pressing at a temperature lower than the sintering temperature of ordinary .beta.-type submicron silicon carbide.
    Type: Grant
    Filed: September 30, 1982
    Date of Patent: May 14, 1985
    Assignee: Hiroshige Suzuki
    Inventors: Hiroshige Suzuki, Teizo Hase
  • Patent number: 4368181
    Abstract: A method of producing inexpensive .beta.-silicon carbide at a relatively low temperature and in a high yield, wherein a raw material mixture consisting of carbonaceous powder having a particle size of not larger than 60 .mu.m and silica powder having a particle size of not larger than 150 .mu.m is continuously heated in a reaction system having a high temperature zone and a low temperature zone to form silicon monoxide in the reaction system together with SiC; the silicon monoxide is condensed at the low temperature zone to capture and is recovered in the reaction product; and the recovered product during the reaction or after the reaction is stirred, mixed and pulverized.
    Type: Grant
    Filed: August 5, 1981
    Date of Patent: January 11, 1983
    Assignee: Hiroshige Suzuki
    Inventors: Hiroshige Suzuki, Teizo Hase
  • Patent number: 4342837
    Abstract: Silicon carbide powders suitable for producing sintered body having a high density are produced by reacting 1.7 to 2.1 parts by weight of silicon monoxide with 1.0 part by weight of finely divided carbon at a temperature of 1,200.degree. to 1,500.degree. C. under a reduced pressure of lower than 10 mmHg.
    Type: Grant
    Filed: February 12, 1981
    Date of Patent: August 3, 1982
    Assignee: Hiroshige Suzuki
    Inventors: Hiroshige Suzuki, Teizo Hase