Patents Assigned to Hiroyuki Akinaga
  • Patent number: 6808740
    Abstract: A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300° C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.
    Type: Grant
    Filed: June 17, 2003
    Date of Patent: October 26, 2004
    Assignees: National Institute of Advanced Industrial Science and Technology, Hiroyuki Akinaga
    Inventors: Hiroyuki Akinaga, Masaharu Oshima, Masaki Mizuguchi
  • Publication number: 20030224103
    Abstract: A magnetoresistance effect film includes a substrate, a plurality of ferromagnetic particles disposed on the substrate, a nonmagnetic film deposited on the substrate and covering the plurality of ferromagnetic particles, and a pair of electrodes arranged on the nonmagnetic film, in which the resistance across the pair of electrodes is changed by applying a magnetic field. The magnetoresistance effect film is manufactured by vapor-depositing ferromagnetic particle starting material on a substrate at a temperature not exceeding 300° C., the starting material being vapor-deposited in an amount enough to cover the substrate surface to a thickness ranging from 0.5 to 15 nm, and, after formation of ferromagnetic particles on the substrate, vapor-depositing at a temperature not exceeding room temperature a nonmagnetic film over the ferromagnetic particles, the nonmagnetic film having a thickness ranging from 1 to 100 nm, and providing a pair of electrodes each at a predetermined position on the nonmagnetic film.
    Type: Application
    Filed: June 17, 2003
    Publication date: December 4, 2003
    Applicants: NAT. INST. OF ADVANCED INDUSTR. SCIENCE AND TECH., Hiroyuki AKINAGA
    Inventors: Hiroyuki Akinaga, Masaharu Oshima, Masaki Mizuguchi