Abstract: A method of forming an integrated circuit assembly includes forming an insulator layer on a preliminary semiconductor assembly. The preliminary semiconductor assembly includes a semiconductor substrate having a first side and a second side opposite the first side, a semiconductor circuitry layer formed on the first side of the semiconductor substrate, and a conductive via extending through the semiconductor substrate from the semiconductor circuitry layer to the second side. The insulator is formed on the second side and an end of the conductive via. The method includes forming a polymer layer on the insulator layer, removing a quantity of the polymer layer sufficient to expose the end of the conductive via through the insulator layer, and forming a conductive contact on the polymer layer and the end of the conductive via.

Abstract: A method of forming an integrated circuit assembly includes forming an insulator layer on a preliminary semiconductor assembly. The preliminary semiconductor assembly includes a semiconductor substrate having a first side and a second side opposite the first side, a semiconductor circuitry layer formed on the first side of the semiconductor substrate, and a conductive via extending through the semiconductor substrate from the semiconductor circuitry layer to the second side. The insulator is formed on the second side and an end of the conductive via. The method includes forming a polymer layer on the insulator layer, removing a quantity of the polymer layer sufficient to expose the end of the conductive via through the insulator layer, and forming a conductive contact on the polymer layer and the end of the conductive via.

Abstract: A photosensitive polymer composition, having (a) a polymer selected from polyimide precursors and polyimides having an acid group protected by a protecting group and having no amino group (—NH2) at the end; and (b) a compound that generates an acid when exposed to light and capable of deprotecting the protecting group from the acid group, is employed to form layers of a semiconductor device.

Abstract: A photosensitive polymer composition, having (a) a polymer selected from polyimide precursors and polyimides having an acid group protected by a protecting group and having no amino group (—NH2) at the end; and (b) a compound that generates an acid when exposed to light and capable of deprotecting the protecting group from the acid group, is employed to form layers of a semiconductor device.

Abstract: A photosensitive resin composition is disclosed that includes (A) a heat-resistant polymer of the general formula (1): (where the symbols are as defined in the specification), (B) a photoreactive compound, and (C) a solvent. A relief pattern is formed from the composition by applying the composition to a support substrate and drying it to form a photosensitive resin film; exposing the dried film; developing the exposed film using an alkaline aqueous solution; and heating the developed photosensitive resin film. Also disclosed is an electronic component that includes an electronic device having such a pattern.

Abstract: A photosensitive resin composition comprising an aromatic polyimide precursor, wherein a 35 &mgr;m film made by imidating ring closure on a silicon substrate has a light transmittance at a wavelength of 365 nm of at least 1% and a residual stress of at most 25 MPa. The composition can be patterned through i-line exposure followed by development with alkaline solutions, and can be imidized into low-stress polyimide patterns. Electronic components having the polyimide patterns have high reliability.

Abstract: A 6,6′-dialkyl-3,3′,4,4′-biphenyltetracarboxylic dianhydride is prepared by brominating a 4-alkylphthalic anhydride at its 5-position, and coupling the bromination product in the presence of a nickel catalyst; A photosensitive resin composition containing a polyimide precursor having repetitive units of general formula (7) is applied onto a substrate, exposed to i-line, developed and heated to form a polyimide relief pattern. wherein Y is a divalent organic group, R7 and R8 are OH or a monovalent organic group, R9 and R10 are a monovalent hydrocarbon group, R11, R12 and R13 are a monovalent hydrocarbon group, a and b are an integer of 0 to 2, c is an integer of 0 to 4, and m is an integer of 0 to 3.

Abstract: A positive-type, heat-resistant photosensitive polymer composition comprising (a) a polyimide precursor or a polyimide which is soluble in an aqueous alkaline solution, (b) a compound capable of generating an acid when exposed to light, and (c) a compound having a phenolic hydroxyl group; a method of forming a relief pattern comprising a step of applying the composition onto a substrate and drying it thereon, a step of exposing it, a step of developing it, and a step of heating it; and an electronic part having as a surface-protecting film or an interlayer insulating film.

Abstract: A photosensitive resin composition comprising an aromatic polyimide precursor, wherein a 35 &mgr;m film made by imidating ring closure on a silicon substrate has a light transmittance at a wavelength of 365 nm of at least 1% and a residual stress of at most 25 MPa. The composition can be patterned through i-line exposure followed by development with alkaline solutions, and can be imidized into low-stress polyimide patterns. Electronic components having the polyimide patterns have high reliability.

Abstract: Disclosed are a photosensitive polymer composition comprising (a) a polymer soluble in an aqueous alkaline solution, (b) an o-quinonediazide compound, and (c) a dissolution inhibitor for the component (a) in an aqueous alkaline solution; a method of using the composition for forming relief patterns; and electronic parts having, as a passivating film or an interlayer insulating film, the relief pattern as formed in the method. The composition has high sensitivity, and give fine relief patterns having a good profile.

Abstract: A photosensitive resin composition comprising an aromatic polyimide precursor, wherein a 10 &mgr;m thick layer of precursor has light transmittance at a wavelength of 365 nm of at least 1% and a 10 &mgr;m thick polyimide film made from the resin composition by imidation ring closure and deposited on a silicon substrate results in a residual stress of at most 25 MPa. The composition can be patterned through i-line exposure followed by development with alkaline solutions, and can be imidized into low-stress polyimide patterns. Electronic components having the polyimide patterns have high reliability.

Abstract: Positive photosensitive resin compositions, which comprise (A) a polyamidate having repetitive units of general formula (I) wherein R1 is a tetravalent organic group, R2 is a divalent organic group having a phenolic hydroxyl group, three R3 groups and three R4 groups each independently are an alkyl group or a hydrogen atom, and at least two R3 groups and at least two R4 groups are alkyl groups, and (B) a compound capable of generating an acid when exposed to light, are improved in storage stability and exposure sensitivity to i-line. Such compositions can improve the reliability of electronic parts when formed into surface-protecting films or interlayer insulating films by a method including exposure to i-line, development and heating.

Abstract: A 6,6′-dialkyl-3,3′4,4′-biphenyltetracarboxylic dianhydride is prepared by brominating a 4-alkylphthalic anhydride at its 5-position, and coupling the bromination product in the presence of a nickel catalyst; A photosensitive resin composition containing a polyimide precursor having repetitive units of general formula (7) is applied onto a substrate, exposed to i-line, developed and heated to form a polyimide relief pattern wherein Y is a divalent organic group, R7 and R8 are OH or a monovalent organic group, R9 and R10 are a monovalent hydrocarbon group, R11, R12 and R13 are a monovalent hydrocarbon group, a and b are an integer of 0 to 2, c is an integer of 0 to 4, and m is an integer of 0 to 3.

Abstract: Disclosed are a photosensitive polymer composition comprising (a) a polymer soluble in an aqueous alkaline solution, (b) an o-quinonediazide compound, and (c) a dissolution inhibitor for the component (a) in an aqueous alkaline solution; a method of using the composition for forming relief patterns; and electronic parts having, as a passivating film or an interlayer insulating film, the relief pattern as formed in the method. The composition has high sensitivity, and give fine relief patterns having a good profile.

Abstract: The invention provides a developer for photosensitive polyimides, with which polyimide patterning for interlayer insulating films for multi-layered circuit boards and for .alpha.-ray shield layers, buffer coat layers and others for semiconductor memory devices is attained within a shorter period of time than with conventional developers. It provides a developer for photosensitive polyimide precursors, which comprises two or more solvents including at least an aprotic polar solvent, and in which the mixed solution of the solvents has a polar component solubility parameter, .delta.P, of not smaller than 7, and provides a patterning method of using the developer.