Patents Assigned to Hitachi Device Engineering
  • Patent number: 6603468
    Abstract: A liquid crystal display device includes a liquid crystal panel; a plurality of data drivers for applying, to the pixel elements, graduation voltages corresponding to the display data; a gate driver for selecting a pixel element to which a graduation voltage is to be applied; and a liquid crystal control circuit for controlling the data drivers on the basis of a transfer clock. Each data driver includes a reproducing circuit for reproducing the transfer clock input to the data driver such that the deviations between the duties of the display data and the transfer clock input to the data driver and the duties of the display data and the transfer clock output from the data driver become small, and for generating a latch clock, and a latch circuit for latching the display data input to the data driver.
    Type: Grant
    Filed: March 2, 2001
    Date of Patent: August 5, 2003
    Assignees: Hitachi, Ltd., Hitachi Device Engineering
    Inventors: Yoshihisa Ooishi, Hiroyuki Nitta, Akihiro Watanabe, Hirobumi Koshi, Satoru Tsunekawa
  • Patent number: 6524924
    Abstract: The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same. Use is made of at least a two-layer structure including a first polycrystalline silicon layer of large crystal grain size and a second polycrystalline silicon layer of small crystal grain size, and the first polycrystalline silicon layer has a positive temperature dependence of resistances while the second polycrystalline layer has a negative temperature dependance of resistance, or vise versa. Moreover, the polycrystalline silicon layer of large grain size can be formed by high dose ion implantation and annealing, or by depositing the layers by chemical vapor deposition at different temperatures so as to form large-grain and small-grain layers.
    Type: Grant
    Filed: July 28, 1998
    Date of Patent: February 25, 2003
    Assignees: Hitachi, Ltd., Hitachi Device Engineering
    Inventors: Hiromi Shimamoto, Takashi Uchino, Takeo Shiba, Kazuhiro Ohnishi, Yoichi Tamaki, Takashi Kobayashi, Toshiyuki Kikuchi, Takahide Ikeda