Abstract: The present invention concerns an information access device for utilizing a supposed information service, which possesses an information-inputting device. The information access device according to one embodiment of the present invention comprises a usage discrimination part which judges whether the information-inputting device is utilized for said intended information service or unintended usage, based on prescribed information from said information inputting device.

Abstract: A nonvolatile memory device of the present invention performs a programming operation by accumulating a charge in certain capacitance which is provided for each programming memory cell and injecting hot electrons generated when the charge is discharged via the memory cell into a floating gate. Thus, a variation in a programming characteristic of the nonvolatile semiconductor memory device is reduced, thereby realizing high-speed programming operation.

Abstract: A color cathode ray tube of the present invention includes an evacuated envelop that is structured from a panel having a phosphor screen on its inner surface, a neck portion containing therein an electron gun assembly, and a cone-shaped section called the funnel for integrally coupling the panel and the neck together, wherein when the main scanning direction of a display screen formed of the panel is defined as an X direction whereas a direction at right angles to the main scan direction is as a Y-direction, an equivalent radius of curvature Rxo of an outer surface of the panel in the X direction is at least 2.6 times greater than an equivalent curvature radius Rxi of the inner surface while forming on the inner panel surface an inside light absorption layer that is comprised of pigments as its principal component.

Abstract: The present invention provides a color cathode ray tube which can improve the focusing characteristics in a wide range of a phosphor screen by setting the total length of a focus electrode divided in multi-stages within a given value and properly selecting the mounting position and the sensitivity of an electrostatic quadrupole lens. A focus electrode G5 which constitutes a final-stage main lens includes a plurality of electrode members G5-1, G5-2, G5-3, G5-4 which constitute an electrostatic quadrupole lens and a curvature-of-image-field correction lens, and assuming the distance from a surface of the focus electrode G5 which faces an anode G6 in an opposed manner to the final-stage main lens-side position of the electrostatic quadrupole lens as L2, a relationship of 7.55≦L2≦11.5 is set.

Abstract: To provide a flat panel type color cathode ray tube which has a favorable feeling of flatness and can improve the drop strength of a shadow mask, a curvature along a diagonal direction of an outer surface of a panel 1 approximates to flat, an equivalent radius of curvature Rox along an X axis on the outer surface of the panel 1 is made smaller than an equivalent radius of curvature Roy along an Y axis on the outer surface of the panel 1 and an equivalent radius of curvature Rix along the X axis on an inner surface of the panel 1 is made larger than an equivalent radius of curvature Riy along the Y axis on the inner surface of the panel 1. Further, the optimum value of a ratio between the equivalent radius of curvature along the Y axis on the inner surface of the panel 1 and the equivalent radius of curvature along the X axis on the inner surface of the panel 1 is set to fall within the range of 0.7<(Riy/Rix)<1.0.

Abstract: A color cathode ray tube includes a panel having an outer surface which is flat and an inner surface which is a curved surface, and the inner surface has an approximately rectangular effective screen on which an image is to be displayed. Letting Tc, Td and D be, respectively, the glass thickness of the panel at the center thereof, the glass thickness of an end of a diagonal effective diameter, and half of the diagonal effective diameter, (Td−Tc)/D≦7.5% and the maximum deflection angle is between 96° and 99°.

Abstract: The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same. Use is made of at least a two-layer structure including a first polycrystalline silicon layer of large crystal grain size and a second polycrystalline silicon layer of small crystal grain size, and the first polycrystalline silicon layer has a positive temperature dependence of resistance while the second polycrystalline layer has a negative temperature dependence of resistance, or vice versa. Moreover, the polycrystalline silicon layer of large grain size can be formed by high dose ion implantation and annealing, or by depositing the layers by chemical vapor deposition at different temperatures so as to form large-grain and small-grain layers.

Abstract: A digital signal processor for computing a vector product between a column vector input signal including a plurality of data items (x0, x1, x2, . . . , x7) and a matrix including a predetermined number of coefficient data items so as to produce a column vector output signal including a plurality of data items (y0, y1, y2, . . . , y7). In a first cycle, the leading data x0 of the column vector input signal is stored in a first store unit (Rin), whereas during this period of time, in a second cycle shorter in time than the first cycle, the data items (c0, c1, c2, . . . , c7) in the row direction constituting a first portion of the matrix are sequentially read out such that both data items are multiplied, thereby storing the multiplication results in an accumulator. A similar data processing is repeatedly executed so as to obtain, based on the outputs from the accumulator, a column vector output signal constituted by the plurality of data items (y0, y1, y2, . . . , y7).