Patents Assigned to Hitachi Engineering & Services, Inc.
  • Semiconductor device, process for the production thereof and apparatus for microwave plasma treatment
    Patent number: 5347100
    Abstract: Disclosed are a semiconductor device comprising a semiconductor substrate, a first metal connection layers, a first substrate oxide layer having a specific form, and a second connection pattern layer; a process for producing the device; and a microwave plasma treatment apparatus having gas feed ports in a specific position. The highly reliable semiconductor devices can be produced at a high rate at high yields.
    Type: Grant
    Filed: March 26, 1992
    Date of Patent: September 13, 1994
    Assignees: Hitachi, Ltd., Hitachi Engineering & Services, Inc.
    Inventors: Takuya Fukuda, Michio Ohue, Fumiyuki Kanai, Atsuyoshi Koike, Katsuaki Saito, Kazuo Suzuki