Patents Assigned to Hitachi Gobal Storage Technologies Inc.
  • Patent number: 7363698
    Abstract: Methods for creating a write head by forming a bump after the top pole is formed are provided. In one embodiment, a bottom pole is created out of a first layer. A non-magnetic gap material is applied to the surface of the wafer. A top pole is created out of a second layer. After creating the top pole, a bump is created. The bump is used to protect at least a portion of the first layer while etching to create a stray flux absorber.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: April 29, 2008
    Assignee: Hitachi Gobal Storage Technologies Inc.
    Inventors: Amanda Baer, Hamid Balamane, Daniel Wayne Bedell, Jyh-Shuey Jerry Lo, Vladimir Nikitin, Aron Pentek, Yvette Winton