Patents Assigned to Hitachi Kyowa Engineering Co., Ltd.
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Patent number: 8269301Abstract: Submounts for mounting optical devices which have an excellent heat radiating property and can be formed in a wafer state in batch are provided. A metallized electrode including optical device mounting parts and wiring parts is formed on a surface of a first substrate containing an insulating material as a main component, a through hole is formed in a glass substrate serving as a second substrate, the optical device mounting parts of the first substrate are aligned to be located inside the through hole of the second substrate, and the first substrate and the second substrate are joined together by use of a method such as anodic bonding.Type: GrantFiled: April 4, 2007Date of Patent: September 18, 2012Assignee: Hitachi Kyowa Engineering Co., Ltd.Inventors: Shohei Hata, Eiji Sakamoto, Naoki Matsushima, Hideaki Takemori, Masatoshi Seki
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Patent number: 8231851Abstract: An exhaust gas containing a perfluoride compound (PFC) and SiF4 is conducted into a silicon remover and brought into contact with water. A reaction water supplied from a water supplying piping and air supplied from an air supplying piping are mixed with the exhaust gas exhausted from the silicon remover. The exhaust gas containing water, air, and CF4 is heated at 700° C. by a heater. The exhaust gas containing PFC is conducted to a catalyst layer filled with an alumina group catalyst. The PFC is decomposed to HF and CO2 by the catalyst. The exhaust gas containing HF and CO2 at a high temperature exhausted from the catalyst layer is cooled in a cooling apparatus. Subsequently, the exhaust gas is conducted to an acidic gas removing apparatus to remove HF. In this way, the silicon component is removed from the exhaust gas before introducing the exhaust gas into the catalyst layer.Type: GrantFiled: September 16, 2002Date of Patent: July 31, 2012Assignees: Hitachi, Ltd., Hitachi Information & Control Solutions, Ltd., Hitachi Kyowa Engineering Co., Ltd.Inventors: Kazuyoshi Irie, Toshihiro Mori, Hisao Yokoyama, Takayuki Tomiyama, Toshihide Takano, Shin Tamata, Shuichi Kanno
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Patent number: 7993529Abstract: A treatment method of organic compounds included in waste water, comprising the steps of: supplying waste water to an adsorber 2 filled with an adsorbent 3 therein for adsorbing the organic compounds in the waste water by the adsorbent 3 in the adsorber 2, supplying a current between an anode 9 and a cathode 8 in water including an electrolyte in an electrolyzer 6 for electrolyzing the water including an electrolyte, and supplying an electrolyte resulting from electrolysis in the electrolyzer 6 to the adsorbent 3 in the adsorber 2 for contacting the electrolyte with the adsorbent 3, so that the organic compounds adsorbed by the adsorbent 3 are desorbed or decomposed.Type: GrantFiled: March 25, 2010Date of Patent: August 9, 2011Assignees: Hitachi, Ltd., Hitachi Kyowa Engineering Co., Ltd.Inventors: Akio Honji, Hayahito Ishii, Akira Mochizuki, Norihide Saho, Tsutomu Tsuyama, Hisashi Isogami
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Patent number: 7842889Abstract: The present invention is characterized by a structure having a substrate 1, and metallization layers 2 formed on the substrate 1, on which a Sn solder film 3 and an Ag film 4 are formed. The Ag film 4 is a metal free from oxidization at room temperature in the atmosphere. In a wet process, since only an exposed side of the Sn solder film 3 is oxidized by the cell reaction of Ag and Sn, an upper surface of the Ag film 4 on the solder film, which would otherwise affect the connection, is not oxidized. Since the Ag film 4 melts into the Sn solder simultaneously with melting of the Sn solder film 3, the Ag film 4 does not hinder the connection.Type: GrantFiled: January 13, 2009Date of Patent: November 30, 2010Assignee: Hitachi Kyowa Engineering Co., Ltd.Inventors: Shohei Hata, Naoki Matsushima, Takeru Fujinaga
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Patent number: 7722773Abstract: A treatment method of organic compounds included in waste water, comprising the steps of: supplying waste water to an adsorber 2 filled with an adsorbent 3 therein for adsorbing the organic compounds in the waste water by the adsorbent 3 in the adsorber 2, supplying a current between an anode 9 and a cathode 8 in water including an electrolyte in an electrolyzer 6 for electrolyzing the water including an electrolyte, and supplying an electrolyte resulting from electrolysis in the electrolyzer 6 to the adsorbent 3 in the adsorber 2 for contacting the electrolyte with the adsorbent 3, so that the organic compounds adsorbed by the adsorbent 3 are desorbed or decomposed.Type: GrantFiled: February 29, 2008Date of Patent: May 25, 2010Assignees: Hitachi, Ltd., Hitachi Kyowa Engineering Co., Ltd.,Inventors: Akio Honji, Hayahito Ishii, Akira Mochizuki, Norihide Saho, Tsutomu Tsuyama, Hisashi Isogami
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Patent number: 7641867Abstract: An exhaust gas containing a perfluoride component (PFC) and SiIF4 is conducted into a silicon remover and brought into contact with water. A reaction water supplied from a water supplying piping and air supplied from an air supplying piping are mixed with the exhaust gas exhausted from the silicon remover. The exhaust gas containing water, air, and CF4 is heated at 700° C. by a heater. The exhaust gas containing PFC is conducted to a catalyst layer filled with an alumina group catalyst. The PFC is decomposed to HF and CO2 at a high temperature exhausted from the catalyst layer is cooled in a cooling apparatus. Subsequently, the exhaust gas is conducted to an acidic gas removing apparatus to remove HF. In this way, the silicon component is removed from the exhaust gas before introducing the exhaust gas into the catalyst layer. Therefore, the surface of the catalyst can be utilized effectively, and the decomposition reaction of the perfluoride compound can be improved.Type: GrantFiled: June 23, 2006Date of Patent: January 5, 2010Assignees: Hitachi, Ltd., Hitachi Engineering Co., Ltd., Hitachi Kyowa Engineering Co., Ltd.Inventors: Kazuyoshi Irie, Toshihiro Mori, Hisao Yokoyama, Takayuki Tomiyama, Toshihide Takano, Shin Tamata, Shuichi Kanno
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Patent number: 7528605Abstract: A superconductive magnet device includes: a pair of coil vessels configured to house a plurality of superconductive coils formed circularly, together with a refrigerant; a pair of vacuum vessels configured to house the coil vessels in the vacuum vessels, respectively; a pair of supports configured to connect the vacuum vessels to each other in a state of the vacuum vessels being faced to each other in an up and down direction, wherein a space between the vacuum vessels is made into a uniform magnetic field space; and a refrigerator and a power lead port configured to be provided at an upper portion of one vacuum vessel positioned upper than the other out of the vacuum vessels, wherein the refrigerator is disposed above one support out of the supports, and the power lead port is disposed above the other support different from the one support.Type: GrantFiled: November 15, 2007Date of Patent: May 5, 2009Assignees: Hitachi, Ltd., Hitachi Kyowa Engineering Co., Ltd.Inventors: Tomoo Chiba, Kunihiro Takayama, Jun Yokoyama
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Patent number: 7525124Abstract: A submount for a light emitting diode and its manufacturing method, the submount including a reflector and having a compact size. The submount for the light emitting diode comprises a Si base substrate having input/output terminals formed on a front side thereof, and a Si reflector having a sloped through hole and a reflecting film formed at least on a slope defining the through hole. The Si reflector is mounted on the Si base substrate and is fixedly joined to the Si base substrate. The Si reflector and the Si base substrate are joined to each other by a thin film solder.Type: GrantFiled: September 9, 2005Date of Patent: April 28, 2009Assignees: Hitachi Kyowa Engineering Co., Ltd., Toyoda Gosei Co., Ltd.Inventors: Hideaki Takemori, Satoshi Higashiyama, Kenji Mori, Ryoichi Tohmon, Minoru Hirose, Hiroaki Kawaguchi
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Patent number: 7511232Abstract: The present invention is characterized by a structure having a substrate 1, and metallization layers 2 formed on the substrate 1, on which a Sn solder film 3 and an Ag film 4 are formed. The Ag film 4 is a metal free from oxidization at room temperature in the atmosphere. In a wet process, since only an exposed side of the Sn solder film 3 is oxidized by the cell reaction of Ag and Sn, an upper surface of the Ag film 4 on the solder film, which would otherwise affect the connection, is not oxidized. Since the Ag film 4 melts into the Sn solder simultaneously with melting of the Sn solder film 3, the Ag film 4 does not hinder the connection.Type: GrantFiled: March 20, 2006Date of Patent: March 31, 2009Assignee: Hitachi Kyowa Engineering Co., Ltd.Inventors: Shohei Hata, Naoki Matsushima, Takeru Fujinaga
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Patent number: 7141221Abstract: An exhaust gas containing a perfluoride component (PFC) and SiF4 is conducted into a silicon remover and brought into contact with water. A reaction water supplied from a water supplying piping and air supplied from an air supplying piping are mixed with the exhaust gas exhausted from the silicon remover. The exhaust gas containing water, air, and CF4 is heated at 700° C. by a heater. The exhaust gas containing PFC is conducted to a catalyst layer filled with an alumina group catalyst. The PFC is decomposed to HF and CO2 at a high temperature exhausted from the catalyst layer is cooled in a cooling apparatus. Subsequently, the exhaust gas is conducted to an acidic gas removing apparatus to remove HF. In this way, the silicon component is removed from the exhaust gas before introducing the exhaust gas into the catalyst layer. Therefore, the surface of the catalyst can be utilized effectively, and the decomposition reaction of the perfluoride compound can be improved.Type: GrantFiled: May 16, 2001Date of Patent: November 28, 2006Assignees: Hitachi, Ltd., Hitachi Engineering Co., Ltd., Hitachi Kyowa Engineering Co., Ltd.Inventors: Kazuyoshi Irie, Toshihiro Mori, Hisao Yokoyama, Takayuki Tomiyama, Toshihide Takano, Shin Tamata, Shuichi Kanno
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Patent number: 6746579Abstract: An object of the present invention is to provide a method of monitoring deterioration of an electrolytic gold plating solution which can always stably performing gold plating by continuously detecting a deterioration state of the gold sulfite complex plating solution, and to provide an apparatus for monitoring the deterioration of the electrolytic gold plating solution. The present invention is characterized by an electrolytic gold plating method for performing electrolytic gold plating on a surface of a substrate body using a gold sulfite plating solution, wherein the gold plating is performed while deterioration of the plating solution is being always or intermittently detected during plating.Type: GrantFiled: November 21, 2001Date of Patent: June 8, 2004Assignee: Hitachi Kyowa Engineering Co., Ltd.Inventor: Hiroyuki Kadota
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Publication number: 20030180175Abstract: To provide a corrosion-resisting and wear resisting alloy including cobalt, nickel or iron as a base used for a sliding part or a valve seat for a machine, and restraining erosion and corrosion caused by eutectic carbide constituting the alloy in an atmosphere with dissolved oxygen.Type: ApplicationFiled: March 13, 2003Publication date: September 25, 2003Applicants: Hitachi, Ltd., Hitachi Kyowa Engineering Co., Ltd.Inventors: Yoshihisa Kiyotoki, Yoshiteru Chiba, Shin Kumagai, Yasuhiro Ogawa, Akira Sakamoto, Hiroyuki Shinohara
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Publication number: 20030094375Abstract: An object of the present invention is to provide a method of monitoring deterioration of an electrolytic gold plating solution which can always stably performing gold plating by continuously detecting a deterioration state of the gold sulfite complex plating solution, and to provide an apparatus for monitoring the deterioration of the electrolytic gold plating solution.Type: ApplicationFiled: November 21, 2001Publication date: May 22, 2003Applicant: Hitachi Kyowa Engineering Co., Ltd.Inventor: Hiroyuki Kadota