Abstract: An information processing apparatus for executing instructions in parallel includes circuitry which, when a first instruction requesting reading of an operand from a certain address of the main storage or buffer storage has been decoded, detects among instructions in execution the presence of a second instruction requesting writing of an operand held by a register such as a general-purpose register into that address of the main storage without implementing an operation on the operand. If the second instruction has been detected, the invention reads out an operand from the register specified for operand reading by said second instruction before operand writing into the main storage by the second instruction is completed.

Abstract: A resistor is provided with a plurality of turn parts whose corners have an obtuse flexional angle in order to improve the relative resistance precision. A ladder resistor can be formed with a plurality of such resistors connected in series, and various electronic devices are formed employing the ladder resistor.

Abstract: A buffer or a plurality of buffers are provided each for holding a write address and an address specifying a write position which are obtained as a result of an execution based on a predicted result. The execution of the instruction is continued up to the operation stage regadless of whether or not the instruction is being executed in the predicted state, the data and the write address are held in the buffer written. The data in the buffer is canceled if the prediction is found to be wrong when the predicted state is completed, and the data is utilized if the prediction is found to be correct.

Abstract: An MOS static type RAM has a memory cell array comprising a plurality of static type memory cells arranged in matrix, a plurality of data lines connected to the data input-output terminals of the respective memory cells and a plurality of word lines connected to the selection terminals of the respective memory cells. Data line load circuits are disposed between the power terminal of the circuit and the data lines. Each data line load circuit is kept at a relatively high impedance in the data write-in operation, and at a relatively low impedance in the data read-out operation. The use of the data line load circuits comprised of such variable impedance circuits can speed up the operating speed of the RAM and can accomplish lower power consumption.

Abstract: Herein disclosed is a DRAM which has such a carrier trapping region around a memory cell array as can trap minority carriers deep in a semiconductor substrate so that the minority carriers to be generated in the semiconductor substrate by alpha rays may be sufficiently trapped. The memory cell of the DRAM has a capacitor which is partially formed of the semiconductor substrate. The carrier trapping region is formed by making use of trenches or a well region.