Patents Assigned to Hitatchi Metals, Ltd.
  • Patent number: 8076256
    Abstract: It is intended to provide a Pb-free semiconductor ceramic composition capable of shifting its Curie temperature toward a positive direction and capable of enhancing its jump characteristic while minimizing the increase in the resistivity at room temperature. There is provided a semiconductor ceramic composition in which a part of Ba of BaTiO3 is substituted with Bi—Na, the semiconductor ceramic composition being obtained by sintering a mixed calcined powder containing a calcined BT powder containing a calcined powder of (BaR)TiO3 or a calcined powder of Ba(TiM)O3 (in which R and M each are a semiconductor dopant), and a calcined BNT powder containing a calcined powder of (BiNa)TiO3; in which BaCO3 and/or TiO2 is/are added to the calcined BT powder or the calcined BNT powder or to the mixed calcined powder.
    Type: Grant
    Filed: October 26, 2007
    Date of Patent: December 13, 2011
    Assignee: Hitatchi Metals, Ltd.
    Inventors: Takeshi Shimada, Kazuya Toji