Patents Assigned to HK Hynix Inc.
  • Patent number: 9036422
    Abstract: Disclosed are a semiconductor memory device and an operating method thereof. The semiconductor memory device includes a memory cell block including a plurality of memory cells, a voltage providing unit suitable for providing a pass voltage or a read voltage to word lines coupled with the memory cells and a control circuit suitable for controlling the voltage providing unit to adjust a pass voltage applied to the memory cells disposed at one side of a selected memory cell and a pass voltage applied to the memory cells disposed at the other side of the selected memory cell based on an address of a word line of the selected memory cell among the memory cells during a read operation or a verification operation.
    Type: Grant
    Filed: November 8, 2013
    Date of Patent: May 19, 2015
    Assignee: HK Hynix Inc.
    Inventor: Myeong Cheol Son