Abstract: The selective formation of 2-acetonaphthalene is achieved by acetylating naphthalene in the presence of liquid hydrogen fluoride. The 2-acetonaphthalene can be separated from the formed 1-acetonaphthalene isomer by successive hydrogenation of the isomer mixture and dehydration. The hydrogenation is selective to the 2-isomer while the 1-acetonaphthalene remains unreacted. Upon completion, 2-vinylnaphthalene can be distilled off from the unreacted 1-acetonaphthalene.

Abstract: The invention is a method of producing a polyester filament which has a superior combination of tensile, dyeability and shrinkage properties. The method comprises forming a polyester copolymer from a mixture consisting essentially of terephthalic acid (TA) or dimethyl terephthalate (DMT), ethylene glycol, adipic acid, and pentaerythritol wherein the adipic acid is added in an amount of between 1.3 and 3.2 weight percent of the terephthalic acid and pentaerythritol is added in the amount from 175 to 700 ppm by weight of terephthatlic acid; forming the filament from the copolymer, drawing the copolymer filament, and heat-setting the drawn filament. The invention also comprises the enhanced fiber formed by the process having an atmospheric dyeability greater than that of an unenhanced PET produced under identical conditions except for the addition of the adipic acid and pentaerythritol, a modulus of greater than 3.0 g/denier, a tenacity from about 5 to 7 g/denier and a hot air shrinkage of less than 10%.

Abstract: A positive acting photoresist system including a hydrophobic blocked polymer can be made to function in a negative sense (or tone) in what is known as an "image reversal" process, which may be summarized as follows:(1) After being exposed to UV radiation through a mask pattern to produce photogenerated acid, a photoresist coated wafer is treated with a gaseous base such as ammonia. The base reacts with photogenerated acid to produce a salt, effectively preventing deblocking of the polymer.(2) The wafer then is exposed to a vacuum to remove any excess base.(3) The wafer is then flood-exposed (i.e., no mask is used) with UV light. This produces acid in the previously masked-over areas. The sensitizer has already been largely destroyed in the original image area and so little acid is produced there.(4) The wafer is then baked to deblock the polymer in the area not exposed in step (1) and developed in aqueous alkali. The resulting image is the inverse of the original mask pattern.