Abstract: A composite material is disclosed which includes a substrate, an oriented film provided on a surface of the substrate and formed of a crystal of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7, and a layer of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7 formed on the oriented film.

Abstract: Disclosed is a method of forming a thin junction film including a first thin oxide flilm presenting a superconductivity and second thin oxide film presenting an insulator properties or possibly semiconductive properties with an improved production efficiency as well as improved film quality and characteristics. Employed are first and second targets each having substantially the same chemical composition excepting oxygen content. The first target is sputtered at a target cathode voltage of minus 100 V by the use of voltage derived from an external D.C. voltage source, thereby forming a first thin oxide film. Subsequently, the target is changed over to the second target while changing the target cathode voltage into self-bias voltage of minus 50 V without any change of the other film formation conditions.

Abstract: A method of making a superconducting thin film of a Y--Ba--Cu--O series material by using a diode parallel plate type sputtering apparatus including a vacuum chamber, a substrate disposed within the vacuum chamber and having a substantially flat surface on which the superconducting thin film is to be formed, and a plate-shaped target functioning as a cathode and disposed within the vacuum chamber to parallelly face to the flat surface of the substrate, the target being made of the same material as the superconducting thin film, a plasma gas being introduced into the vacuum chamber, and a voltage being applied between the cathode and the substrate, wherein the method comprises the steps of applying a high frequency voltage having a frequency higher than 40 MHz between the cathode and the substrate to generate plasma of the introduced gas, superimposing a DC voltage (V) on the high frequency voltage in a polarity that the cathode becomes negative, and setting the DC voltage at a value where the DC voltage is su

Abstract: A composite material is disclosed which includes a substrate, an oriented film provided on a surface of the substrate and formed of a crystal of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7, and a layer of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7 formed on the oriented film.

Abstract: A process for removing environmental contaminants from an exhaust gas by a semidry method through contact with an absorbent slurry containing alkaline compounds in a reactor, comprising the steps of adding a material containing calcium sulfate and/or calcium sulfite, a material containing aluminum oxide, and a material containing silicon dioxide to a material capable of supplying calcium oxide, mixing the mixture with water, curing the whole mixture in hot water, and then introducing and dispersing the resulting absorbent slurry in the reactor for contact with the environmental contaminants. In a modification the absorbent slurry is obtained by adding a material capable of supplying aluminum oxide, silicon dioxide, and calcium sulfate and/or calcium sulfite to a material capable of supplying calcium oxide, calcining the mixture at 750.degree.-950.degree. C., mixing the calcined product with water, and curing the mixture in hot water.

Abstract: The generation of a reaction product is suppressed between a metallic substrate and plasma in depositing a ceramic intermediate layer on the metallic substrate in a process for depositing an oxide film on the metallic substrate by thermal plasma flash evaporation method. Thus, there is no reaction phase in the ceramic intermediate layer and the metallic substrate, and an intermediated buffer layer of only oxide ceramic is deposited on a flat surface of the metallic substrate. The intermediate ceramic layer is deposited in inert atmosphere of a low oxygen concentration at a temperature of less than 600.degree. C. for the metallic substrate. Then, a superconducting thin film is deposited on the ceramic intermediate layer.

Abstract: A suspension type transporter suspends a bolt drawing machine through a trolley and a hoist above a pressure container having many bolt attached thereto and transports the bolt drawing machine to a target position. A track settling portion having a guide is provided on an outer periphery of a lid of the pressure container. The suspension type transporter for the bolt drawing machine comprises a guide mechanism which restricts movement of the bolt drawing machine in the air by the guide. The guide mechanism of the transporter is provided with a position detector which can detect a position of the bolt drawing machine. A positioning controller of the suspension type transporter controls the transporter so that the transporter starts at slow speed, is then accelerated to a prescribed speed and is gradually decelerated near the target position.

Abstract: This invention relates to a preparation process of desulfurizing and denitrating agents for an off-gas produced upon combustion of a fuel such as coal or heavy oil.The agent can be obtained by providing as first raw material(s) one or more materials capable of yielding calcium oxide and calcium sulfate, providing as second raw material(s) one or more materials capable of yielding silicon dioxide and aluminum oxide, mixing the first raw material(s) or a mixture of the first raw material(s) and either fractional or whole portion(s) of the second raw material(s) with water, subjecting the resultant aqueous mixture to wet-air aging at room temperature or to steam aging, and optionally subjecting the thus-aged mixture further to a heat treatment at a temperature of 30.degree. C. or higher.