Abstract: An SEM image acquisition device including a scanning signal generation unit configured to rotate a scanning direction of the electron beam to be scanned on the sample and generate a scanning signal to be emitted on a position on the sample corresponding to a same region and same pixels on the sample; a deflection device configured to emit the electron beam on a position on the sample corresponding to the same region and the same pixels on the sample, on the basis of the scanning signal generated by the scanning signal generation unit; a detection and amplification unit configured to detect and amplify a signal from the position on the sample corresponding to the same region and the same pixels on the sample, on which the electron beam was emitted by being deflected by the deflection device; and an image generation unit configured to generate an image from when the position on the sample corresponding to the same region and the same pixels on the sample is irradiated, on the basis of the signal detected and am

Abstract: [Purpose] The present invention relates to an ultrasonic motor having a stator which includes a piezoelectric element for moving a rotor in a prescribed direction by applying a predetermined ultrasonic voltage thereto, and the rotor which is fixed to the stator by a frictional force, and a method for manufacturing an ultrasonic motor, and it has for its purpose to attain decrease of dust appearance by enhancement of a wear resistance, a different hardness, or the like in such a way that a contact part of at least either of a stator and a rotor which constitute the ultrasonic motor is irradiated with ions. [Constitution] An ultrasonic motor characterized in that either or both of contact parts of a stator and a rotor is/are irradiated with ions, thereby to enhance a wear resistance of the contact part or parts.

Abstract: A pattern specification method for specifying a drawn microscopic pattern, comprising the step of creating a first pattern in which process shift information is reflected on a pattern expressed by design data, the step of enlarging the drawn pattern, the step of performing pattern matching between the first pattern which corresponds to the drawn pattern to-be-specified or a pattern which include patterns surrounding this first pattern and the enlarged pattern or an enlarged pattern which includes enlarged patterns surrounding this enlarged pattern, and the step of outputting the enlarged pattern which matches most in the pattern matching.

Abstract: A method of deciding the quality of a measurement value of the line width, the line interval or the like of a pattern on an object to-be-measured, including acquiring the signal intensity distribution of the pattern on the object to-be-measured, detecting the edge positions of the pattern from the acquired signal intensity distribution, detecting the taper widths of the edge parts of the pattern from the acquired signal intensity distribution, and deciding that the measurement value calculated on the basis of the detected edge positions is correct, when the detected taper widths fall within a predetermined range set beforehand. In this way, it is permitted to automatically decide the defective measurement of the line width of the pattern, or the like, attributed to an unclear image due to inferior focusing in an image photographing mode, an unclear image due to an image drift ascribable to charging-up, or the like.

Abstract: A charged particle beam apparatus comprising a preparatory evacuation chamber (15 in FIG. 1A) into which a sample (12) is conveyed and which is preliminarily evacuated, an ultraviolet irradiation unit (21) which is disposed in the preparatory evacuation chamber (15) and which irradiates the surface of the sample (12) conveyed into the preparatory evacuation chamber (15), with ultraviolet rays for a predetermined time period, and a sample chamber (16) into which the sample (12) is conveyed in the preliminarily evacuated state of the preparatory evacuation chamber (15) or from which the sample (12) is conveyed into the preparatory evacuation chamber (15), wherein the ultraviolet irradiation of the sample (12) by the ultraviolet irradiation unit (21) is performed before the conveyance of the sample (12) into the sample chamber (16), or/and after the conveyance thereof from the sample chamber (16), thereby to remove contamination on the surface of the sample (12).

Abstract: A stencil mask (10) for use in electron beam projection exposure includes a silicon base plate (12), an insulating film (14) formed on the silicon base plate, and a silicon film (16) formed on the insulating film. In the silicon base plate and the insulating film, an opening (18) penetrating them is provided; in the silicon film, a plurality of holes (20) penetrating it and continuous to the opening are provided. In the silicon base plate and the insulating film, at least one hole (22) penetrating them is provided, and in this hole, an electrically conducting substance (24) contacting the silicon base plate and the silicon film is disposed.

Abstract: A pattern specification method for specifying a drawn microscopic pattern, comprising the step of creating a first pattern in which process shift information is reflected on a pattern expressed by design data, the step of enlarging the drawn pattern, the step of performing pattern matching between the first pattern which corresponds to the drawn pattern to-be-specified or a pattern which include patterns surrounding this first pattern and the enlarged pattern or an enlarged pattern which includes enlarged patterns surrounding this enlarged pattern, and the step of outputting the enlarged pattern which matches most in the pattern matching.

Abstract: A charged particle beam apparatus comprising a preparatory evacuation chamber (15 in FIG. 1A) into which a sample (12) is conveyed and which is preliminarily evacuated, an ultraviolet irradiation unit (21) which is disposed in the preparatory evacuation chamber (15) and which irradiates the surface of the sample (12) conveyed into the preparatory evacuation chamber (15), with ultraviolet rays for a predetermined time period, and a sample chamber (16) into which the sample (12) is conveyed in the preliminarily evacuated state of the preparatory evacuation chamber (15) or from which the sample (12) is conveyed into the preparatory evacuation chamber (15), wherein the ultraviolet irradiation of the sample (12) by the ultraviolet irradiation unit (21) is performed before the conveyance of the sample (12) into the sample chamber (16), or/and after the conveyance thereof from the sample chamber (16), thereby to remove contamination on the surface of the sample (12).

Abstract: A method of deciding a measurement value as decides the quality of the measurement value of the line width, the line interval or the like of a pattern on an object to-be-measured, comprising the steps of acquiring the signal intensity distribution of the pattern on the object to-be-measured (2 in FIG. 1), detecting the edge positions of the pattern from the acquired signal intensity distribution, detecting the taper widths of the edge parts of the pattern from the acquired signal intensity distribution, and deciding that the measurement value calculated on the basis of the detected edge positions is correct, when the detected taper widths fall within a predetermined range set beforehand. In this way, it is permitted to automatically decide the defective measurement of the line width of the pattern, or the like, attributed to an unclear image due to inferior focusing in an image photographing mode, an unclear image due to an image drift ascribable to charging-up, or the like.

Abstract: An electronic beam transmitting through a mask is detected by a detector in which a plurality of elements is aligned in a plurality of lines while an image signal is transferred by the detector synchronously with movement of the mask, and high resolution due to a short wavelength of the electronic beam can be effectively utilized as well as an image signal is transferred at right angles to a line of the detector synchronously with same time detection of pixels in a direction of the line, so that an inspection of a mask with high resolution at high speed would be achieved, and furthermore, it would be achieved to produce an image scanned in a straight line with the extremely high accuracy without zigzag scan when a stage with an easy structure is used.