Abstract: The present invention provides a ceramic-circuit composite structure, comprising: a ceramic plate with a supporting surface that has a recessed supporting portion; a curved-surface circuit buried in the ceramic plate; and a power supply module electrically connected to the curved-surface circuit. Moreover, the present invention provides a method for making the ceramic-circuit composite structure. The ceramic-circuit composite structure of the present invention makes use of the curved-surface circuit to improve the prior art problem that a planar circuit has less static electricity or lower temperature at the center than in the peripheral region.

Abstract: The present invention provides an aluminum nitride wafer and a method for making the same. The method includes forming at least one alignment notch in or at least one flat alignment edge on a periphery of the aluminum nitride wafer. The alignment notch and the flat alignment edge can prevent the aluminum nitride wafer from being in a poor state during the semiconductor manufacturing process and makes it possible to position the aluminum nitride wafer precisely so that the fraction defective can be lowered. The aluminum nitride wafer of the present invention has advantages of effective insulation, efficient heat dissipation, and a high dielectric constant, and can be used in semiconductor manufacturing processes, electronic products, and semiconductor equipment.

Abstract: A method of producing ceramic wafer includes a forming step and processing step. The processing step includes forming positioning notch or positioning, flat edge and edge profile, which avoids the ceramic wafers to have processing defect during cutting, grinding, and polishing, for increasing yield. The ceramic particles for producing ceramic wafer include nitride ceramic powder, oxide ceramic powder, and nitride ceramic powder. The ceramic wafer has low dielectric constant, insulation, and excellent heat dissipation, which can be applied for the need of semiconductor process, producing electric product and semiconductor equipment.