Abstract: Methods and devices for fabricating AlGaN/GaN normally-off high electron mobility transistors (HEMTs). A fluorine-based (electronegative ions-based) plasma treatment or low-energy ion implantation is used to modify the drain-side surface field distribution without the use of a field plate electrode. The off-state breakdown voltage can be improved and current collapse can be completely suppressed in LDD-HEMTs with no significant degradation in gains and cutoff frequencies.

Abstract: An optimal denoising method for video coding. This method makes use of very few pixels and linear operations, and can be embedded into the motion compensation process of video encoders. This method is simple and flexible, yet offers high performance and produces appealing pictures.

Abstract: A system and methodology for efficient multi-user transmission in a wireless communication with limited feedback are provided. A non-cooperative feedback-based multi-user transmission scheme is described, wherein users in a wireless communication system may independently communicate selected channel information feedback to the base station. The base station may then choose suitable precoding weights based on the received channel information feedback. An adaptive threshold-based feedback approach is also described for multi-user transmission, wherein the quality of feedback for each user can be quantified by a special threshold by the system prior to engaging in multi-user communication.

Abstract: An efficient media streaming method utilizing a globally load balanced overlay network. This method makes use of capacity per out-degree values to construct and maintain an overlay network for media streaming in a Peer-to-Peer environment.

Abstract: The invention provides an asymmetric UHF RFID tag antenna that variously comprises a capacitive load, a folded loop conductor and an inductive matching element, which provides a differential input for RFID tag circuitry. The design provides a small form factor while maintaining a high gain and impedance tuning properties. Various refinements and associated devices and systems using the design are provided and disclosed according to a host of optional embodiments.

Abstract: A method of fabricating AlGaN/GaN enhancement-mode heterostructure field-effect transistors (HFET) using fluorine-based plasma immersion or ion implantation. The method includes: 1) generating gate patterns; 2) exposing the AlGaN/GaN heterostructure in the gate region to fluorine-based plasma treatment with photoresist as the treatment mask in a self-aligned manner; 3) depositing the gate metal to the plasma treated AlGaN/GaN heterostructure surface; 4) lifting off the metal except the gate electrode; and 5) high temperature post-gate annealing of the sample. This method can be used to shift the threshold voltage of a HFET toward a more positive value, and ultimately convert a depletion-mode HFET to an enhancement-mode HFET (E-HFET).

Abstract: A system and method for transmission of video data to a wireless client. In one example embodiment, the present innovations include a proxy server that receives video data from a video server. The proxy includes buffers individually associated to wireless clients. In preferred embodiments, buffers are managed independently so as to optimize video streaming to clients.

Abstract: The present invention provides a method for separating two highly pure fullerenes from a mixture of fullerenes comprising crystallizing a first fullerene component and a second fullerene component, wherein the phase equilibrium behavior of the mixture fed to a crystallizer is characterized by a region(s) where a pure fullerene of the two fullerenes or the solid solution or solvate thereof can be crystallized out.

Abstract: An electrooptically tunable waveguide-coupled microresonator. In one example embodiment, the switch includes a photoalignment layer that enhances control of liquid crystal alignment in the cladding near the coupling region of the microresonator and waveguide.

Abstract: An azo compound of the present invention is represented by the general formula (1): (wherein, R1 and R2 each independently represents a hydroxy group, or a polymerizable functional group selected from the group consisting of a (meth)acryloyl group, a (meth)acryloyloxy group, a (meth)acrylamide group, a vinyl group, a vinyloxy group, and a maleimide group; X1 represents single bond when R1 is a hydroxy group and represents a linking group represented by -(A1-B1)m- when R1 is a polymerizable functional group; X2 represents a single bond when R2 is a hydroxy group and represents a linking group represented by -(A2-B2)n- when R2 is a polymerizable functional group; R3 and R4 each independently represents —OR7, a hydroxyalkyl group having 1 to 4 carbon atoms, or —CONR8R9; and R5 and R6 each independently represents a carboxy group, a sulfo group, a nitro group, amino group, or a hydroxy group).

Abstract: A three dimensional (3D) fractal structure with H as the mother element is hereby disclosed. Such a 3D structure can act as selective total microwave reflectors or selective microwave filters in transmission. When excited through current injection, such a 3D fractal structure can act as highly efficient antenna for radiating or detecting pre-determined microwaves, with the relevant wavelength much larger than the size of the radiation or detection structure.

Abstract: A waveguide structure is described wherein microwaves or radio-frequency waves can be guided in their propagation through channels whose cross-sections contain fractal patterns, with relevant dimensions much smaller than the wavelengths of the guided waves. A finite section of such waveguide can be used as an efficient delay line.

Abstract: A method for and devices utilizing monolithic integration of enhancement-mode and depletion-mode AlGaN/GaN heterojunction field-effect transistors (HFETs) is disclosed. Source and drain ohmic contacts of HFETs are first defined. Gate electrodes of the depletion-mode HFETs are then defined. Gate electrodes of the enhancement-mode HFETs are then defined using fluoride-based plasma treatment and high temperature post-gate annealing of the sample. Device isolation is achieved by either mesa etching or fluoride-based plasma treatment. This method provides a complete planar process for GaN-based integrated circuits favored in high-density and high-speed applications.

Abstract: The present invention concerns a novel retinoic acid regulated gene whose expression product displays useful morphogenic/mitogenic properties. The present invention further concerns an isolated nucleic acid of SEQ ID NO:1 encoding a retinoic acid regulated expression product having an amino acid sequence of SEQ ID NO:2.

Abstract: The present invention provides a preparation for treatment or prevention of a condition in a patient, said preparation comprising Schisandrin B. The concentration of Schisandrin B in the preparation may be between about 0.01 and about 0.1%, or it may be between about 20 and about 40% w/w or w/v. The preparation may additionally comprise one or more components selected from the group consisting of herbal extracts, fluids, solvents, antioxidants, preservatives, electrolytes, salts and pH control agents.

Abstract: A novel form of an integrated variable inductor uses an on-chip transformer together with a variable capacitor. The variable capacitor can either be a varactor or a switched capacitor array and is connected to the secondary coil of the transformer. By changing the capacitance at the secondary coil of a transformer, the equivalent inductance looking into the primary coil of the transformer can be adjusted. With another capacitor in parallel to the primary coil, two different modes of resonance inherently exist, and a very wide frequency tuning range can be achieved by combining the two modes.

Abstract: This invention relates to a novel soy isoflavone product with high purities and strong biological activities and the method of producing the same from natural soybeans, soybean materials (i.e. tofu dregs, soy molasses) and other plant sources. The method includes three steps consisting of extraction with an organic solvent, hydrolysis using an acid and crystallization using an antisolvent. The procedure is very simple and thus can be easily adapted for large-scale manufacturing. Moreover, the procedure is able to produce a high yield of total isoflavones at a lower cost. HPLC analysis and E-Screen bioassay reveal that the obtained product not only contains a high content of isoflavone aglycones by weight of dry matter but also exhibits strong estrogenic activity toward human cells. Therefore, the product should be efficacious for relieving menopausal symptoms and other estrogen-deficient diseases and can be used in health care supplements or as additives for foods, beverages or cosmetics.

Abstract: The present invention provides a composition (e.g., a pharmaceutical composition) for reducing aging-related mitochondrial antioxidant status changes in a subject, wherein the composition comprises Schisandrin B. The present invention further provides a composition (e.g., a pharmaceutical composition) for reducing ischemia-reperfusion injury in an aging subject, wherein the composition comprises Schisandrin B. Also provided are methods for reducing aging-related mitochondrial antioxidant status changes and/or for reducing ischemia-reperfusion injury in an aging subject using the same.

Abstract: A single inductor multiple-input multiple-output (SI-MIMO) switching converter time-multiplexes different input power sources through only one inductor to provide multiple regulated output voltages, which can be used to power up different blocks of a portable electronic device (or whatever else it is used for) and at the same time to charge up a rechargeable battery. Power multiplexing is achieved by input switches that are also the switching elements of the switching converter, thus eliminating an additional power multiplexer.

Abstract: A semiconductor device may include a substrate and an insulating layer formed on the substrate. A multi-layer fin may be formed on the insulating layer and may include two semiconducting layers isolated by an insulating layer in vertical direction. A first MOS type device comprising a first source region, a first channel region and a first drain region is arranged on the first semiconducting layer in the multi-layer fin. A second MOS type device comprising a second source region, a second channel region and a second drain region is arranged on the second semiconducting layer in the multi-layer fin. A gate electrode is provided so as to be vertically adjacent to the first and second channel regions.